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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPB051NE8N G DISTI # IPB051NE8NG | Infineon Technologies AG | Trans MOSFET N-CH 85V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB051NE8NG) RoHS: Not Compliant Min Qty: 220 Container: Bulk | Americas - 0 |
|
| IPB051NE8NGATMA1 DISTI # IPB051NE8NGATMA1 | Infineon Technologies AG | - Bulk (Alt: IPB051NE8NGATMA1) Min Qty: 205 Container: Bulk | Americas - 0 |
|
| IPB051NE8N G DISTI # 726-IPB051NE8NG | Infineon Technologies AG | MOSFET N-Ch 85V 100A D2PAK-2 RoHS: Compliant | 0 | |
| IPB051NE8NG | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 775 |
|
| IPB051NE8NGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 33000 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: IPB054N06N3 G OMO.#: OMO-IPB054N06N3-G |
MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 |
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Mfr.#: IPB055N03L G OMO.#: OMO-IPB055N03L-G |
MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 |
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Mfr.#: IPB054N08N3GATMA1-CUT TAPE |
Nuevo y original |
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Mfr.#: IPB050N06NG OMO.#: OMO-IPB050N06NG-1190 |
Nuevo y original |
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Mfr.#: IPB052N04NG OMO.#: OMO-IPB052N04NG-1190 |
Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IPB054N06N3G OMO.#: OMO-IPB054N06N3G-1190 |
Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Alt: IPB054N06N3 G) |
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Mfr.#: IPB054N08N3 OMO.#: OMO-IPB054N08N3-1190 |
Nuevo y original |
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Mfr.#: IPB054N08N3G,054N08N |
Nuevo y original |
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Mfr.#: IPB05CN10NG OMO.#: OMO-IPB05CN10NG-1190 |
Nuevo y original |
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Mfr.#: IPB054N08N3 G OMO.#: OMO-IPB054N08N3-G-126 |
IGBT Transistors MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 |
