CY7C1165KV18-550BZXC

CY7C1165KV18-550BZXC
Mfr. #:
CY7C1165KV18-550BZXC
Fabricante:
Cypress Semiconductor
Descripción:
SRAM 18MB (1Mx18) 1.8v 550MHz DDR II SRAM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CY7C1165KV18-550BZXC Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CY7C1165KV18-550BZXC más información CY7C1165KV18-550BZXC Product Details
Atributo del producto
Valor de atributo
Fabricante
Cypress Semiconductor Corp
categoria de producto
Memoria
Serie
CY7C1165KV18
Escribe
Sincrónico
embalaje
Bandeja
Estilo de montaje
SMD / SMT
Paquete-Estuche
FBGA-165
Temperatura de funcionamiento
0°C ~ 70°C (TA)
Interfaz
Parallel
Suministro de voltaje
1.7 V ~ 1.9 V
Paquete de dispositivo de proveedor
165-FBGA (13x15)
Tamaño de la memoria
18M (512K x 36)
Tipo de memoria
SRAM - Sincrónico, QDR II +
Velocidad
550MHz
Tiempo de acceso
0.45 ns
Formato de memoria
RAM
Temperatura máxima de funcionamiento
+ 70 C
Temperatura mínima de funcionamiento
0 C
Tipo de interfaz
Parallel
Organización
512 k x 36
Suministro-Corriente-Máx.
1.1 A
Suministro-Voltaje-Máx.
1.9 V
Suministro-Voltaje-Mín.
1.7 V
Frecuencia de reloj máxima
550 MHz
Tags
CY7C1165K, CY7C1165, CY7C116, CY7C11, CY7C1, CY7C, CY7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***i-Key
IC SRAM 18M PARALLEL 165FBGA
Synchronous SRAM
Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More
Cypress QDR-II+ DDR-II+ Sync SRAM
Cypress' QDR-II+ is a high performance, dual-port SRAM memory. QDR-II+ SRAM offers a maximum speed of 550 MHz, densities up to 144 Mb, read latencies of 2 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. QDR-II+ products also offer optional programmable On-Die Termination (ODT). The QDR-II+ family also includes double data rate (DDR-II+) devices. DDR-II+ devices are similar to QDR-II+ devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II+ is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More
Parte # Mfg. Descripción Valores Precio
CY7C1165KV18-550BZXC
DISTI # CY7C1165KV18-550BZXC-ND
Cypress SemiconductorIC SRAM 18M PARALLEL 165FBGA
RoHS: Compliant
Min Qty: 136
Container: Tray
Temporarily Out of Stock
  • 136:$47.7150
CY7C1165KV18-550BZXCCypress SemiconductorQDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
RoHS: Compliant
570
  • 1000:$54.1800
  • 500:$57.0400
  • 100:$59.3800
  • 25:$61.9300
  • 1:$66.6900
CY7C1165KV18-550BZXC
DISTI # 727-C1165KV18550BZXC
Cypress SemiconductorSRAM 18MB (1Mx18) 1.8v 550MHz DDR II SRAM
RoHS: Compliant
0
  • 136:$45.8700
Imagen Parte # Descripción
CY7C1165KV18-400BZXC

Mfr.#: CY7C1165KV18-400BZXC

OMO.#: OMO-CY7C1165KV18-400BZXC

SRAM 18MB (512Kx36) 1.8v 400MHz QDR II SRAM
CY7C1165KV18-550BZXC

Mfr.#: CY7C1165KV18-550BZXC

OMO.#: OMO-CY7C1165KV18-550BZXC

SRAM 18MB (1Mx18) 1.8v 550MHz DDR II SRAM
CY7C1165KV18-400BZC

Mfr.#: CY7C1165KV18-400BZC

OMO.#: OMO-CY7C1165KV18-400BZC

SRAM 18MB (512Kx36) 1.8v 400MHz QDR II SRAM
CY7C1165KV18-550BZC

Mfr.#: CY7C1165KV18-550BZC

OMO.#: OMO-CY7C1165KV18-550BZC

SRAM 18MB (512Kx36) 1.8v 550MHz QDR II SRAM
CY7C1165KV18-550BZC

Mfr.#: CY7C1165KV18-550BZC

OMO.#: OMO-CY7C1165KV18-550BZC-CYPRESS-SEMICONDUCTOR

SRAM 18MB (512Kx36) 1.8v 550MHz QDR II SRAM
CY7C1165KV18-400BZC

Mfr.#: CY7C1165KV18-400BZC

OMO.#: OMO-CY7C1165KV18-400BZC-CYPRESS-SEMICONDUCTOR

SRAM 18MB (512Kx36) 1.8v 400MHz QDR II SRAM
CY7C1165KV18-550BZXC

Mfr.#: CY7C1165KV18-550BZXC

OMO.#: OMO-CY7C1165KV18-550BZXC-CYPRESS-SEMICONDUCTOR

SRAM 18MB (1Mx18) 1.8v 550MHz DDR II SRAM
CY7C1165KV18-400BZXC

Mfr.#: CY7C1165KV18-400BZXC

OMO.#: OMO-CY7C1165KV18-400BZXC-CYPRESS-SEMICONDUCTOR

SRAM 18MB (512Kx36) 1.8v 400MHz QDR II SRAM
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de CY7C1165KV18-550BZXC es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
68,80 US$
68,80 US$
10
65,36 US$
653,65 US$
100
61,92 US$
6 192,45 US$
500
58,48 US$
29 242,15 US$
1000
55,04 US$
55 044,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
  • LB Series Inductors
    TAIYO YUDEN's LB series inductors have expanded to include price competitive, AEC-Q200 qualified high-reliability version inductors.
  • BRL3225 Series
    TAIYO YUDEN's wire wound chip inductors are designed to save space and provide optimal inductance and DC resistance values.
  • VF3 Hall Effect Sensor ICs
    Honeywell is pleased to announce its high sensitivity latching sensor ICs, VF360NT, VF360ST, that are AEC-Q100 qualified for use in the transportation industry. AEC-Q100 qualification provides enh
  • Compare CY7C1165KV18-550BZXC
    CY7C1165KV18400BZC vs CY7C1165KV18400BZXC vs CY7C1165KV18550BZC
  • PLT Series Pulse Transformers
    KEMET's PLT pulse transformers are designed with a proprietary ferrite core and show excellent insertion loss characteristics.
  • MICRO SWITCH™ V7 Series
    Honeywell's V7 switch is available as a pin plunger style or with optional integral or auxiliary levers to actuate the switch and offer versatility in the application.
Top