CY7C1165KV18-400BZXC vs CY7C1165KV18-400BZC vs CY7C1165KV18-550BZC

 
PartNumberCY7C1165KV18-400BZXCCY7C1165KV18-400BZCCY7C1165KV18-550BZC
DescriptionSRAM 18MB (512Kx36) 1.8v 400MHz QDR II SRAMSRAM 18MB (512Kx36) 1.8v 400MHz QDR II SRAMSRAM 18MB (512Kx36) 1.8v 550MHz QDR II SRAM
ManufacturerCypress SemiconductorCypress SemiconductorCypress Semiconductor
Product CategorySRAMSRAMSRAM
RoHSYNN
Memory Size18 Mbit18 Mbit18 Mbit
Organization512 k x 36512 k x 36512 k x 36
Access Time---
Maximum Clock Frequency400 MHz400 MHz550 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max1.9 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max850 mA850 mA1.1 A
Minimum Operating Temperature0 C0 C0 C
Maximum Operating Temperature+ 70 C+ 70 C+ 70 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseFBGA-165FBGA-165FBGA-165
PackagingTrayTrayTray
Memory TypeVolatileQDRVolatile
SeriesCY7C1165KV18CY7C1165KV18CY7C1165KV18
TypeSynchronousSynchronousSynchronous
BrandCypress SemiconductorCypress SemiconductorCypress Semiconductor
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity136136136
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
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