SQJ200EP-T1_GE3

Name: Vishay - SQJ200EP-T1_GE3
Brand: Vishay
SKU: OMO-7977023
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SQJ200EP-T1_GE3
Fabricante:: Vishay
Descripción:: MOSFET 2N-CH 20V 20A/60A PPAK SO
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SQJ200EP-T1_GE3 Ficha de datos
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Más información:: SQJ200EP-T1_GE3 más información

Atributo del producto
Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: FET: matrices

Serie: Automotive, AEC-Q101, TrenchFETR

embalaje: Embalaje alternativo de Digi-ReelR

Estilo de montaje: SMD / SMT

Paquete-Estuche: PowerPAKR SO-8 Dual

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 175°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 2 Channel

Paquete de dispositivo de proveedor: PowerPAKR SO-8 Dual Asymmetric

Configuración: 2 N-Channel

Tipo FET: 2 N-Channel (Dual)

Potencia máxima: 27W, 48W

Tipo transistor: 2 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 20V

Entrada-Capacitancia-Ciss-Vds: 975pF @ 10V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 20A, 60A

Rds-On-Max-Id-Vgs: 8.8 mOhm @ 16A, 10V

Vgs-th-Max-Id: 2V @ 250μA

Puerta-Carga-Qg-Vgs: 18nC @ 10V

Disipación de potencia Pd: 27 W 48 W

Temperatura máxima de funcionamiento: + 175 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 13 ns 14 ns

Hora de levantarse: 18 ns 17 ns

Vgs-Puerta-Fuente-Voltaje: +/- 20 V +/- 20 V

Id-corriente-de-drenaje-continua: 20 A 60 A

Vds-Drain-Source-Breakdown-Voltage: 20 V 20 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V 1 V

Resistencia a la fuente de desagüe de Rds: 12.4 mOhms 6.3 mOhms

Polaridad del transistor: NPN de canal N

Tiempo de retardo de apagado típico: 13 ns 19 ns

Tiempo de retardo de encendido típico: 4 ns 7 ns

Qg-Gate-Charge: 12 nC 29 nC

Transconductancia directa-Mín.: 55 S 60 S

Modo de canal: Mejora

Tags: SQJ200, SQJ20, SQJ2, SQJ

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

SQJ200EP-T1_GE3 Descripción

***et: Trans MOSFET N-CH 20V/20V 20A/60A 8-Pin PowerPAK SO T/R

***nell: MOSFET, AEC-Q101, DUAL N-CH, POWERPAK SO

***ark: Mosfet, Aec-Q101, Dual N-Ch, Powerpak So; Transistor Polarity:dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.0031Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Rohs Compliant: Yes

SQJ200EP-T1_GE3 Más información

SQJ200 & SQJ202 Dual N Channel Auto MOSFETs: Vishay SQJ200 & SQJ202 Dual N Channel Auto MOSFETs are AEC-Q101 qualified automotive MOSFETs geared toward automotive applications. These Dual N Channel MOSFETs are part of the TrenchFET power MOSFET series. The MOSFETs are housed in SO-8L package types. The SQJ200 and SQJ202 have an operating junction and storage temperature range of -55 to +175.Learn More

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SQJ200EP-T1_GE3 DISTI # SQJ200EP-T1_GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 20A/60A PPAK SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2528In Stock	1000:$0.4672 500:$0.5918 100:$0.7164 10:$0.9190 1:$1.0300
SQJ200EP-T1_GE3 DISTI # SQJ200EP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 20A/60A PPAK SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2528In Stock	1000:$0.4672 500:$0.5918 100:$0.7164 10:$0.9190 1:$1.0300
SQJ200EP-T1_GE3 DISTI # SQJ200EP-T1_GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 20A/60A PPAK SO RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.3871 6000:$0.4022 3000:$0.4234
SQJ200EP-T1_GE3 DISTI # SQJ200EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V/20V 20A/60A 8-Pin PowerPAK SO T/R (Alt: SQJ200EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.3949 18000:€0.4129 12000:€0.4669 6000:€0.5759 3000:€0.8029
SQJ200EP-T1_GE3 DISTI # SQJ200EP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V/20V 20A/60A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ200EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.3689 18000:$0.3789 12000:$0.3899 6000:$0.4059 3000:$0.4189
SQJ200EP-T1_GE3 DISTI # 20AC4016	Vishay Intertechnologies	DUAL N-CHANNEL 20-V (D-S) 175C MOSFE	0	10000:$0.3660 6000:$0.3750 4000:$0.3890 2000:$0.4320 1000:$0.4760 1:$0.4960
SQJ200EP-T1_GE3 DISTI # 78-SQJ200EP-T1_GE3	Vishay Intertechnologies	MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified RoHS: Compliant	3024	1:$1.1300 10:$1.0000 100:$0.7980 500:$0.6180 1000:$0.4880 3000:$0.4420 6000:$0.4200 9000:$0.4060
SQJ200EP-T1_GE3 DISTI # TMOS1258	Vishay Intertechnologies	2N-CH 20V 20/60A PPSO-8L RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.4340
SQJ200EP-T1_GE3 DISTI # 2778694	Vishay Intertechnologies	MOSFET, AEC-Q101, DUAL N-CH, POWERPAK SO	2956	500:£0.4420 250:£0.4780 100:£0.5130 10:£0.6680 1:£0.8110
SQJ200EP-T1-GE3	Vishay Intertechnologies	MOSFET UAL N-CHANNEL 20-V (D-S) 175C RoHS: Compliant	Americas -
SQJ200EP-T1_GE3 DISTI # 2778694	Vishay Intertechnologies	MOSFET, AEC-Q101, DUAL N-CH, POWERPAK SO RoHS: Compliant	2956	5000:$0.7420 1000:$0.7680 500:$0.8120 250:$0.9560 100:$1.1700 25:$1.4900 5:$1.8000

Productos relacionados

Imagen

Parte #

Descripción

Mfr.#: SQJ200EP-T1_GE3

OMO.#: OMO-SQJ200EP-T1-GE3

MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified

Mfr.#: SQJ200EP

OMO.#: OMO-SQJ200EP-1190

Nuevo y original

Mfr.#: SQJ200EP-T1_GE3

OMO.#: OMO-SQJ200EP-T1-GE3-VISHAY

MOSFET 2N-CH 20V 20A/60A PPAK SO

Disponibilidad

Valores:: Available
En orden:: 2500
Ingrese la cantidad:

El precio actual de SQJ200EP-T1_GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,55 US$~~; ~~0,55 US$~~

10: ~~0,52 US$~~; ~~5,22 US$~~

100: ~~0,49 US$~~; ~~49,41 US$~~

500: ~~0,47 US$~~; ~~233,35 US$~~

1000: ~~0,44 US$~~; ~~439,20 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SQJ200 3
SQJ20 7
SQJ2 9
SQJ 248

SQJ200EP-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes