FQB9N50CTM

FQB9N50CTM
Mfr. #:
FQB9N50CTM
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 500V N-Ch Q-FET advance C-Series
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQB9N50CTM Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
9 A
Rds On - Resistencia de la fuente de drenaje:
800 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
135 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
4.83 mm
Longitud:
10.67 mm
Serie:
FQB9N50C
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
9.65 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
6.5 S
Otoño:
64 ns
Tipo de producto:
MOSFET
Hora de levantarse:
65 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
93 ns
Tiempo típico de retardo de encendido:
18 ns
Parte # Alias:
FQB9N50CTM_NL
Unidad de peso:
0.046296 oz
Tags
FQB9N50C, FQB9N5, FQB9N, FQB9, FQB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 500 V, 9 A, 800 mΩ, D2PAK
***ure Electronics
N-Channel 500 V 0.8 Ohm Surface Mount Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 500V 9A 3-Pin (2+Tab) D2PAK T/R
***nell
MOSFET, N CH, 500V, 9A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.65ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:135W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FQB9N50CTM
DISTI # 31044700
ON Semiconductor500V N-CHANNEL ADVANCE Q-FET C8800
  • 800:$0.7220
FQB9N50CTM
DISTI # FQB9N50CTMFSCT-ND
ON SemiconductorMOSFET N-CH 500V 9A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
924In Stock
  • 100:$1.4338
  • 10:$1.7840
  • 1:$1.9900
FQB9N50CTM
DISTI # FQB9N50CTMFSDKR-ND
ON SemiconductorMOSFET N-CH 500V 9A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
924In Stock
  • 100:$1.4338
  • 10:$1.7840
  • 1:$1.9900
FQB9N50CTM
DISTI # FQB9N50CTMFSTR-ND
ON SemiconductorMOSFET N-CH 500V 9A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
800In Stock
  • 5600:$0.8496
  • 2400:$0.8822
  • 1600:$0.9476
  • 800:$1.1437
FQB9N50CTM
DISTI # V36:1790_06301107
ON Semiconductor500V N-CHANNEL ADVANCE Q-FET C0
  • 800000:$0.6368
  • 400000:$0.6391
  • 80000:$0.8101
  • 8000:$1.0970
  • 800:$1.1440
FQB9N50CTM
DISTI # FQB9N50CTM
ON SemiconductorTrans MOSFET N-CH 500V 9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB9N50CTM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 8000:€0.6719
  • 4800:€0.7239
  • 3200:€0.7839
  • 1600:€0.8549
  • 800:€1.0449
FQB9N50CTM
DISTI # FQB9N50CTM
ON SemiconductorTrans MOSFET N-CH 500V 9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB9N50CTM)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 8000:$0.6739
  • 4800:$0.6919
  • 3200:$0.6999
  • 1600:$0.7099
  • 800:$0.7139
FQB9N50CTM
DISTI # 84W8880
ON SemiconductorMOSFET, N CHANNEL, 500V, 0.65OHM, 9A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.65ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 500:$0.9500
  • 250:$1.0200
  • 100:$1.0800
  • 50:$1.1600
  • 25:$1.2500
  • 10:$1.3300
  • 1:$1.5600
FQB9N50CTM
DISTI # 84H4751
ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,9A I(D),TO-263AB ROHS COMPLIANT: YES0
  • 9600:$0.8400
  • 2400:$0.8650
  • 800:$0.9460
  • 1:$0.9520
FQB9N50CTM
DISTI # 95W3213
ON SemiconductorMOSFET Transistor, N Channel, 9 A, 500 V, 0.65 ohm, 10 V, 2 V RoHS Compliant: Yes803
  • 500:$1.2700
  • 100:$1.4400
  • 10:$1.7500
  • 1:$2.0300
FQB9N50CTM
DISTI # 512-FQB9N50CTM
ON SemiconductorMOSFET 500V N-Ch Q-FET advance C-Series
RoHS: Compliant
1318
  • 1:$1.8400
  • 10:$1.5600
  • 100:$1.2500
  • 500:$1.0900
  • 800:$0.9030
FQB9N50CTM
DISTI # 6710933P
ON SemiconductorMOSFET N-CHANNEL 500V 9A D2PAK, RL86
  • 500:£0.5900
  • 250:£0.6000
  • 100:£0.6200
  • 25:£0.6400
FQB9N50CTM
DISTI # 2322625
ON SemiconductorMOSFET, N CH, 500V, 9A, TO-263-3821
  • 500:£0.6460
  • 250:£0.7430
  • 100:£0.8390
  • 25:£1.0500
  • 5:£1.1500
FQB9N50CTM
DISTI # 2322625
ON SemiconductorMOSFET, N CH, 500V, 9A, TO-263-3
RoHS: Compliant
803
  • 800:$1.3900
  • 500:$1.6800
  • 100:$1.9200
  • 10:$2.4000
  • 1:$2.8300
Imagen Parte # Descripción
IRS20957STRPBF

Mfr.#: IRS20957STRPBF

OMO.#: OMO-IRS20957STRPBF

Audio Amplifiers Class D Aud Drvr IC
EP4CE6E22C8N

Mfr.#: EP4CE6E22C8N

OMO.#: OMO-EP4CE6E22C8N

FPGA - Field Programmable Gate Array FPGA - Cyclone IV E 392 LABs 91 IOs
AUIRS2092STR

Mfr.#: AUIRS2092STR

OMO.#: OMO-AUIRS2092STR

Gate Drivers AUTO HI VTG 100V 500ns 800kHz
KSC3265YMTF

Mfr.#: KSC3265YMTF

OMO.#: OMO-KSC3265YMTF

Bipolar Transistors - BJT NPN Epitaxial Transistor
STTH12R06G

Mfr.#: STTH12R06G

OMO.#: OMO-STTH12R06G

Rectifiers RECTIFIER
STTH8R06G-TR

Mfr.#: STTH8R06G-TR

OMO.#: OMO-STTH8R06G-TR

Rectifiers 8.0 Amp 600 Volt
IRFB4227PBF

Mfr.#: IRFB4227PBF

OMO.#: OMO-IRFB4227PBF

MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
505431-1000

Mfr.#: 505431-1000

OMO.#: OMO-505431-1000-1190

CONTACT, SOCKET, 30-26AWG, CRIMP, Product Range:Micro-Lock PLUS 505431 Series, Contact Gender:Socket, Contact Termination Type:Crimp, Wire Size AWG Max:26AWG, Contact Plating:Tin Plated Contacts,
AUIRS2092STR

Mfr.#: AUIRS2092STR

OMO.#: OMO-AUIRS2092STR-INFINEON-TECHNOLOGIES

IC AMP AUDIO 500W D 16SOIC
FDD5612

Mfr.#: FDD5612

OMO.#: OMO-FDD5612-ON-SEMICONDUCTOR

MOSFET N-CH 60V 5.4A DPAK
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de FQB9N50CTM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,84 US$
1,84 US$
10
1,56 US$
15,60 US$
100
1,25 US$
125,00 US$
500
1,09 US$
545,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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