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FQI7N80TU

FQI7N80TU
Mfr. #:
FQI7N80TU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 800V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQI7N80TU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-262-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
6.6 A
Rds On - Resistencia de la fuente de drenaje:
1.5 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3.13 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
7.88 mm
Longitud:
10.29 mm
Serie:
FQI7N80
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.83 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
5 S
Otoño:
55 ns
Tipo de producto:
MOSFET
Hora de levantarse:
80 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
95 ns
Tiempo típico de retardo de encendido:
35 ns
Parte # Alias:
FQI7N80TU_NL
Unidad de peso:
0.073511 oz
Tags
FQI7N, FQI7, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,n-Channel,800V V(Br)Dss,6.6A I(D),to-262Aa Rohs Compliant: Yes
***emi
N-Channel Power MOSFET, QFET®, 800 V, 6.6 A, 1.5 Ω, I2PAK
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FQI7N80TU
DISTI # V36:1790_06359039		ON Semiconductor800V N-CHANNEL QFET0
    FQI7N80TU
    DISTI # FQI7N80TU-ND    		ON SemiconductorMOSFET N-CH 800V 6.6A I2PAK
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Temporarily Out of Stock
    • 1000:$1.2932
    FQI7N80TU
    DISTI # FQI7N80TU    		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R (Alt: FQI7N80TU)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1000:€0.9279
    • 500:€0.9429
    • 100:€0.9569
    • 50:€0.9729
    • 25:€1.0709
    • 10:€1.2529
    • 1:€1.5319
    FQI7N80TU
    DISTI # FQI7N80TU    		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R - Bulk (Alt: FQI7N80TU)
    RoHS: Compliant
    Min Qty: 264
    Container: Bulk    		Americas - 0
    • 2640:$1.0900
    • 264:$1.1900
    • 528:$1.1900
    • 792:$1.1900
    • 1320:$1.1900
    FQI7N80TU
    DISTI # FQI7N80TU    		ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R - Rail/Tube (Alt: FQI7N80TU)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 10000:$0.9169
    • 6000:$0.9399
    • 4000:$0.9519
    • 2000:$0.9639
    • 1000:$0.9709
    FQI7N80TU
    DISTI # 82C4196    		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6.6A I(D),TO-262AA ROHS COMPLIANT: YES0
    • 5000:$1.0600
    • 2500:$1.0900
    • 1000:$1.3500
    • 500:$1.5000
    • 100:$1.6300
    • 10:$2.0200
    • 1:$2.3800
    FQI7N80TU
    DISTI # 512-FQI7N80TU    		ON SemiconductorMOSFET 800V N-Channel QFET
    RoHS: Compliant    		0
    • 1:$2.3900
    • 10:$2.0300
    • 100:$1.6300
    • 500:$1.4200
    • 1000:$1.1800
    • 2000:$1.1000
    • 5000:$1.0600
    FQI7N80TUFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RoHS: Compliant    		6588
    • 1000:$1.2500
    • 500:$1.3200
    • 100:$1.3700
    • 25:$1.4300
    • 1:$1.5400
    FQI7N80TUFairchild Semiconductor CorporationINSTOCK4750
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      FQI7N10L

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      OMO.#: OMO-FQI7N10LTU-ON-SEMICONDUCTOR

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      OMO.#: OMO-FQI7N80-1190

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      Mfr.#: FQI7P06TU

      OMO.#: OMO-FQI7P06TU-ON-SEMICONDUCTOR

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      Mfr.#: FQI7N10TU

      OMO.#: OMO-FQI7N10TU-ON-SEMICONDUCTOR

      		 MOSFET N-CH 100V 7.3A I2PAK
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de FQI7N80TU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,39 US$
      2,39 US$
      10
      2,03 US$
      20,30 US$
      100
      1,63 US$
      163,00 US$
      500
      1,42 US$
      710,00 US$
      1000
      1,18 US$
      1 180,00 US$
      2000
      1,10 US$
      2 200,00 US$
      5000
      1,06 US$
      5 300,00 US$
      10000
      1,02 US$
      10 200,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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