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FDT86113LZ

FDT86113LZ
Mfr. #:
FDT86113LZ
Fabricante:
ON Semiconductor
Descripción:
MOSFET N-CH 100V 3.3A SOT223
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDT86113LZ Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
FDT86113LZ más información
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET - Single
Serie
PowerTrenchR
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.008826 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-261-4, TO-261AA
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
SOT-223-4
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
1W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
315pF @ 50V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
3.3A (Tc)
Rds-On-Max-Id-Vgs
100 mOhm @ 3.3A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Puerta-Carga-Qg-Vgs
6.8nC @ 10V
Disipación de potencia Pd
2.2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
1.5 ns
Hora de levantarse
1.3 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
3.3 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
1.7 V
Resistencia a la fuente de desagüe de Rds
100 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
10 ns
Tiempo de retardo de encendido típico
3.8 ns
Qg-Gate-Charge
4.1 nC
Transconductancia directa-Mín.
8 S
Tags
FDT861, FDT8, FDT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 0.1 ohm Surface Mount PowerTrench Mosfet - SOT-223
***Semiconductor
N-Channel PowerTrench® MOSFET 100V, 3.3A, 100mΩ
***et Europe
Trans MOSFET N-CH 100V 3.3A 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N CH, 100V, 3.3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.5V
***rchild Semiconductor
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDT86113LZ
DISTI # FDT86113LZCT-ND		ON SemiconductorMOSFET N-CH 100V 3.3A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6120In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
FDT86113LZ
DISTI # FDT86113LZDKR-ND		ON SemiconductorMOSFET N-CH 100V 3.3A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6120In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
FDT86113LZ
DISTI # FDT86113LZTR-ND		ON SemiconductorMOSFET N-CH 100V 3.3A SOT223
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.3190
FDT86113LZ
DISTI # FDT86113LZ		ON SemiconductorTrans MOSFET N-CH 100V 3.3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FDT86113LZ)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.2609
  • 8000:$0.2589
  • 16000:$0.2559
  • 24000:$0.2529
  • 40000:$0.2459
FDT86113LZ
DISTI # FDT86113LZ		ON SemiconductorTrans MOSFET N-CH 100V 3.3A 4-Pin(3+Tab) SOT-223 T/R (Alt: FDT86113LZ)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    FDT86113LZ
    DISTI # 88T3370    		ON SemiconductorTrans MOSFET N-CH 100V 3.3A 3-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 88T3370)
    RoHS: Compliant
    Min Qty: 5
    Container: Ammo Pack    		Americas - 0
    • 1:$0.7500
    • 10:$0.6200
    • 25:$0.5470
    • 50:$0.4730
    • 100:$0.4000
    • 250:$0.3730
    • 500:$0.3470
    FDT86113LZ
    DISTI # 54T8362    		ON SemiconductorMOSFET Transistor, N Channel, 3.3 A, 100 V, 0.075 ohm, 10 V, 1.7 V0
    • 1:$0.2720
    • 4000:$0.2720
    • 8000:$0.2700
    • 12000:$0.2660
    • 20000:$0.2540
    FDT86113LZ
    DISTI # 88T3370    		ON SemiconductorMOSFET, N CHANNEL, 100V, 3.3A, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:3.3A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes6255
    • 1:$0.7500
    • 10:$0.6200
    • 25:$0.5470
    • 50:$0.4730
    • 100:$0.4000
    • 250:$0.3730
    • 500:$0.3470
    • 1000:$0.3200
    FDT86113LZ
    DISTI # 512-FDT86113LZ    		ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
    RoHS: Compliant    		0
    • 1:$0.7500
    • 10:$0.6200
    • 100:$0.4000
    • 1000:$0.3200
    • 4000:$0.2710
    FDT86113LZ
    DISTI # 7599715P    		ON SemiconductorMOSFET N-CHANNEL 100V 3.3A SOT223, RL1795
    • 50:£0.3480
    • 500:£0.2080
    • 2500:£0.1900
    • 5000:£0.1840
    FDT86113LZON Semiconductor 23500
      FDT86113LZ
      DISTI # 2083343RL      		ON SemiconductorMOSFET, N CH, 100V, 3.3A, SOT-223
      RoHS: Compliant      		0
      • 1:$1.1900
      • 10:$0.9810
      • 100:$0.6340
      • 1000:$0.5070
      • 4000:$0.4290
      • 8000:$0.4130
      • 24000:$0.3960
      • 48000:$0.3910
      FDT86113LZ
      DISTI # 2083343      		ON SemiconductorMOSFET, N CH, 100V, 3.3A, SOT-223
      RoHS: Compliant      		6255
      • 1:$1.1900
      • 10:$0.9810
      • 100:$0.6340
      • 1000:$0.5070
      • 4000:$0.4290
      • 8000:$0.4130
      • 24000:$0.3960
      • 48000:$0.3910
      FDT86113LZ
      DISTI # 2083343      		ON SemiconductorMOSFET, N CH, 100V, 3.3A, SOT-223
      RoHS: Compliant      		7105
      • 5:£0.5280
      • 25:£0.4860
      • 100:£0.3030
      • 250:£0.2700
      • 500:£0.2380
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      Mfr.#: FDT86244-CUT TAPE

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      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de FDT86113LZ es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,37 US$
      0,37 US$
      10
      0,35 US$
      3,50 US$
      100
      0,33 US$
      33,20 US$
      500
      0,31 US$
      156,75 US$
      1000
      0,30 US$
      295,10 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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