OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IPSA70R2K0P7SAKMA1

IPSA70R2K0P7SAKMA1
Mfr. #:
IPSA70R2K0P7SAKMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET CONSUMER
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPSA70R2K0P7SAKMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPSA70R2K0P7SAKMA1 Datasheet
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
PG-TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
700 V
Id - Corriente de drenaje continua:
3 A
Rds On - Resistencia de la fuente de drenaje:
1.64 Ohms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
16 V
Qg - Carga de puerta:
3.8 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
17.6 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
70 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5.5 ns
Cantidad de paquete de fábrica:
1500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
60 ns
Tiempo típico de retardo de encendido:
12 ns
Parte # Alias:
IPSA70R2K0P7S SP001664770
Tags
IPSA7, IPSA, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 700V 3A 3-Pin TO-251 Tube
***i-Key
MOSFET TO251-3
***ark
Mosfet, N-Ch, 700V, 3A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:700V; On Resistance Rds(On):1.64Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 700V, 3A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:700V; On Resistance Rds(on):1.64ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:17.6W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 700V, 3A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:3A; Tensione Drain Source Vds:700V; Resistenza di Attivazione Rds(on):1.64ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:17.6W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
Parte # Mfg. Descripción Valores Precio
IPSA70R2K0P7SAKMA1
DISTI # V99:2348_18786382		Infineon Technologies AGCONSUMER0
  • 1500000:$0.1696
  • 750000:$0.1701
  • 150000:$0.2465
  • 15000:$0.4068
  • 1500:$0.4350
IPSA70R2K0P7SAKMA1
DISTI # IPSA70R2K0P7SAKMA1-ND		Infineon Technologies AGMOSFET TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube		442In Stock
  • 6000:$0.2061
  • 3000:$0.2204
  • 1500:$0.2417
  • 100:$0.3981
  • 25:$0.4976
  • 10:$0.5330
  • 1:$0.6200
IPSA70R2K0P7SAKMA1
DISTI # IPSA70R2K0P7SAKMA1		Infineon Technologies AGTrans MOSFET N-CH 700V 3A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPSA70R2K0P7SAKMA1)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 30000:$0.1719
  • 15000:$0.1749
  • 9000:$0.1809
  • 6000:$0.1879
  • 3000:$0.1949
IPSA70R2K0P7SAKMA1
DISTI # SP001664770		Infineon Technologies AGTrans MOSFET N-CH 700V 3A 3-Pin TO-251 Tube (Alt: SP001664770)
RoHS: Compliant
Min Qty: 75
Container: Tube		Europe - 0
  • 750:€0.1869
  • 450:€0.2009
  • 300:€0.2239
  • 150:€0.2509
  • 75:€0.2959
IPSA70R2K0P7SAKMA1
DISTI # 49AC8007		Infineon Technologies AGMOSFET, N-CH, 700V, 3A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:700V,On Resistance Rds(on):1.64ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes320
  • 10000:$0.2110
  • 2500:$0.2240
  • 1000:$0.2570
  • 500:$0.2900
  • 100:$0.3230
  • 10:$0.5120
  • 1:$0.6100
IPSA70R2K0P7SAKMA1
DISTI # 726-IPSA70R2K0P7SAKM		Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant		291
  • 1:$0.5900
  • 10:$0.4890
  • 100:$0.2980
  • 1000:$0.2310
IPSA70R2K0P7SAKMA1
DISTI # 2843150		Infineon Technologies AGMOSFET, N-CH, 700V, 3A, TO-251330
  • 500:£0.1950
  • 250:£0.2120
  • 100:£0.2290
  • 25:£0.3980
  • 5:£0.4260
IPSA70R2K0P7SAKMA1
DISTI # 2843150		Infineon Technologies AGMOSFET, N-CH, 700V, 3A, TO-251
RoHS: Compliant		320
  • 6000:$0.3110
  • 3000:$0.3330
  • 1500:$0.3650
  • 100:$0.6000
  • 25:$0.7500
  • 5:$0.8030
Imagen Parte # Descripción
IAUT300N10S5N015ATMA1

Mfr.#: IAUT300N10S5N015ATMA1

OMO.#: OMO-IAUT300N10S5N015ATMA1

 MOSFET MOSFET_(75V,120V(
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1

 MOSFET MOSFET_(75V,120V(
VS-HFA08TA60C-M3

Mfr.#: VS-HFA08TA60C-M3

OMO.#: OMO-VS-HFA08TA60C-M3

 Rectifiers 600V 8A TO-220 HexFred
IPU95R3K7P7AKMA1

Mfr.#: IPU95R3K7P7AKMA1

OMO.#: OMO-IPU95R3K7P7AKMA1

 MOSFET 950 V CoolMOS P7
IPN70R2K0P7SATMA1

Mfr.#: IPN70R2K0P7SATMA1

OMO.#: OMO-IPN70R2K0P7SATMA1

 MOSFET CONSUMER
IPSA70R1K4P7SAKMA1

Mfr.#: IPSA70R1K4P7SAKMA1

OMO.#: OMO-IPSA70R1K4P7SAKMA1

 MOSFET CONSUMER
TPS54302DDCR

Mfr.#: TPS54302DDCR

OMO.#: OMO-TPS54302DDCR

 Switching Voltage Regulators PEARL2 3A
3263

Mfr.#: 3263

OMO.#: OMO-3263

 Temperature Sensor Development Tools Adafruit Universal Thermocouple Amplifier MAX31856 Breakout
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1-INFINEON-TECHNOLOGIES

 MOSFET_(75V,120V(
VS-HFA08TA60C-M3

Mfr.#: VS-HFA08TA60C-M3

OMO.#: OMO-VS-HFA08TA60C-M3-VISHAY

 DIODE FRED 600V 4A TO220AB
Disponibilidad
Valores:
291
En orden:
2274
Ingrese la cantidad:
El precio actual de IPSA70R2K0P7SAKMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,59 US$
0,59 US$
10
0,49 US$
4,89 US$
100
0,30 US$
29,80 US$
1000
0,23 US$
231,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
More Newest Products
Top