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IPU95R3K7P7AKMA1

IPU95R3K7P7AKMA1
Mfr. #:
IPU95R3K7P7AKMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET 950 V CoolMOS P7
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPU95R3K7P7AKMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPU95R3K7P7AKMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
IPAK-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
950 V
Id - Corriente de drenaje continua:
2 A
Rds On - Resistencia de la fuente de drenaje:
3.7 Ohms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
6 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
22 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Serie:
P7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
40 ns
Tipo de producto:
MOSFET
Hora de levantarse:
23 ns
Cantidad de paquete de fábrica:
1500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
46 ns
Tiempo típico de retardo de encendido:
7ns
Parte # Alias:
IPU95R3K7P7
Tags
IPU9, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
950V CoolMOS™ P7 SJ MOSFETs
Infineon Technologies 950V CoolMOS™ P7 SJ MOSFETs employs 950V super junction technology and combines best-in-class performance with state of the art ease-of-use. These MOSFETs come with an integrated Zener diode Electro Static Discharge (ESD) protection. The integrated diode improves ESD robustness that reduces ESD-related yield loss and provides exceptional ease-of-use levels. These MOSFETs offer 3V VGS(th) and narrow tolerance of only ±0.5V that makes it easy to drive and design-in. The 950V SJ MOSFETs provide low DPAK RDS(on) that enables higher density while decreasing BOM and assembly cost.
Parte # Mfg. Descripción Valores Precio
IPU95R3K7P7AKMA1
DISTI # V99:2348_22609666		Infineon Technologies AGLOW POWER_NEW1500
  • 10000:$0.4557
  • 2500:$0.4649
  • 1000:$0.4853
  • 500:$0.5480
  • 100:$0.6153
  • 10:$0.8842
  • 1:$1.0348
IPU95R3K7P7AKMA1
DISTI # IPU95R3K7P7AKMA1-ND		Infineon Technologies AGMOSFET N-CH 950V 2A TO251
RoHS: Compliant
Min Qty: 1
Container: Tube		1950In Stock
  • 6000:$0.4050
  • 3000:$0.4253
  • 1500:$0.4556
  • 100:$0.6987
  • 25:$0.8504
  • 10:$0.8960
  • 1:$1.0000
IPU95R3K7P7AKMA1
DISTI # 31263314		Infineon Technologies AGLOW POWER_NEW1500
  • 10000:$0.4899
  • 2500:$0.4998
  • 1000:$0.5217
  • 500:$0.5891
  • 100:$0.6614
  • 16:$0.9505
IPU95R3K7P7AKMA1
DISTI # 32638670		Infineon Technologies AGLOW POWER_NEW1176
  • 500:$0.5445
  • 100:$0.6168
  • 28:$0.8019
IPU95R3K7P7AKMA1
DISTI # IPU95R3K7P7AKMA1		Infineon Technologies AGTrans MOSFET N-CH 950V 2A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPU95R3K7P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube		Americas - 0
  • 15000:$0.3669
  • 9000:$0.3739
  • 6000:$0.3869
  • 3000:$0.4009
  • 1500:$0.4159
IPU95R3K7P7AKMA1
DISTI # 71AC0403		Infineon Technologies AGMOSFET, 950V, 2A, 150DEG C, 22W,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:950V,On Resistance Rds(on):3.11ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes257
  • 10000:$0.3750
  • 2500:$0.3890
  • 1000:$0.4380
  • 500:$0.5560
  • 100:$0.6290
  • 10:$0.8180
  • 1:$0.9600
IPU95R3K7P7AKMA1
DISTI # 726-IPU95R3K7P7AKMA1		Infineon Technologies AGMOSFET 950 V CoolMOS P7
RoHS: Compliant		1935
  • 1:$0.9500
  • 10:$0.8100
  • 100:$0.6230
  • 500:$0.5500
  • 1000:$0.4340
  • 2500:$0.3850
  • 10000:$0.3710
IPU95R3K7P7AKMA1
DISTI # IPU95R3K7P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,950V,1.4A,22W,IPAK300
  • 75:$0.5100
  • 25:$0.5700
  • 5:$0.6500
  • 1:$0.7200
IPU95R3K7P7AKMA1
DISTI # XSKDRABV0030589		Infineon Technologies AG 
RoHS: Compliant		4500 in Stock0 on Order
  • 4500:$0.6064
  • 1500:$0.6497
IPU95R3K7P7AKMA1
DISTI # 2916137		Infineon Technologies AGMOSFET, 950V, 2A, 150DEG C, 22W
RoHS: Compliant		182
  • 5000:$0.5850
  • 1000:$0.6160
  • 500:$0.6520
  • 250:$0.7530
  • 100:$0.8910
  • 25:$1.0900
  • 5:$1.2600
IPU95R3K7P7AKMA1
DISTI # 2916137		Infineon Technologies AGMOSFET, 950V, 2A, 150DEG C, 22W182
  • 500:£0.4030
  • 250:£0.4300
  • 100:£0.4570
  • 25:£0.5930
  • 5:£0.6640
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IPN95R1K2P7ATMA1

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OMO.#: OMO-IPN95R1K2P7ATMA1

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IPN95R2K0P7ATMA1

Mfr.#: IPN95R2K0P7ATMA1

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IPU95R1K2P7AKMA1

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IPU95R2K0P7AKMA1

Mfr.#: IPU95R2K0P7AKMA1

OMO.#: OMO-IPU95R2K0P7AKMA1

 MOSFET 950 V CoolMOS P7
STD3N95K5AG

Mfr.#: STD3N95K5AG

OMO.#: OMO-STD3N95K5AG

 MOSFET Automotive-grade N-channel 950 V, 4.3 Ohm typ., 2 A MDmesh K5 Power MOSFET in a DPAK package
STU3LN80K5

Mfr.#: STU3LN80K5

OMO.#: OMO-STU3LN80K5

 MOSFET N-channel 800 V, 2.75 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package
STD3N95K5AG

Mfr.#: STD3N95K5AG

OMO.#: OMO-STD3N95K5AG-STMICROELECTRONICS

 Trans MOSFET N-CH 950V 2A Automotive 3-Pin(2+Tab) DPAK T/R
STU3LN80K5

Mfr.#: STU3LN80K5

OMO.#: OMO-STU3LN80K5-STMICROELECTRONICS

 MOSFET N-CHANNEL 800V 2A IPAK
IPN95R2K0P7ATMA1

Mfr.#: IPN95R2K0P7ATMA1

OMO.#: OMO-IPN95R2K0P7ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 950V 4A SOT223
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IPU95R3K7P7AKMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,95 US$
0,95 US$
10
0,81 US$
8,10 US$
100
0,62 US$
62,30 US$
500
0,55 US$
275,00 US$
1000
0,43 US$
434,00 US$
2500
0,38 US$
962,50 US$
10000
0,37 US$
3 710,00 US$
25000
0,36 US$
8 975,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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