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BSC028N06NSATMA1

BSC028N06NSATMA1
Mfr. #:
BSC028N06NSATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 60V 23A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC028N06NSATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
BSC028N06NSATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
INFINEO
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
BSC028N06NS BSC028N06NSXT SP000917416
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
83 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
8 ns
Hora de levantarse
38 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
100 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Resistencia a la fuente de desagüe de Rds
2.8 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
19 ns
Tiempo de retardo de encendido típico
11 ns
Qg-Gate-Charge
37 nC
Tags
BSC028N06N, BSC028N06, BSC028, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 100 A, 60 V, 0.0025 ohm, 10 V, 2.8 V
***ure Electronics
Single N-Channel 60 V 2.8 mOhm 37 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Parte # Mfg. Descripción Valores Precio
BSC028N06NSATMA1
DISTI # BSC028N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 23A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.0082
BSC028N06NSATMA1
DISTI # BSC028N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 23A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.1582
  • 500:$1.3978
  • 100:$1.7972
  • 10:$2.2370
  • 1:$2.4800
BSC028N06NSATMA1
DISTI # BSC028N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 23A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.1582
  • 500:$1.3978
  • 100:$1.7972
  • 10:$2.2370
  • 1:$2.4800
BSC028N06NSATMA1
DISTI # BSC028N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC028N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.8119
  • 10000:$0.7829
  • 20000:$0.7549
  • 30000:$0.7289
  • 50000:$0.7159
BSC028N06NSATMA1
DISTI # 79X1329		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes2451
  • 1:$2.2900
  • 10:$1.9500
  • 25:$1.8200
  • 50:$1.6800
  • 100:$1.5500
  • 250:$1.4600
  • 500:$1.3600
  • 1000:$1.1300
BSC028N06NSATMA1
DISTI # 726-BSC028N06NSATMA1		Infineon Technologies AGMOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		142
  • 1:$2.0800
  • 10:$1.7700
  • 100:$1.4100
  • 500:$1.2400
  • 1000:$1.0300
  • 2500:$0.9520
  • 5000:$0.9170
BSC028N06NS
DISTI # 726-BSC028N06NS		Infineon Technologies AGMOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$2.0800
  • 10:$1.7700
  • 100:$1.4100
  • 500:$1.2400
  • 1000:$1.0300
  • 2500:$0.9520
  • 5000:$0.9170
BSC028N06NSATMA1
DISTI # 2432704		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
RoHS: Compliant		2701
  • 1:$3.2900
  • 10:$2.8100
  • 100:$2.2300
  • 500:$1.9700
  • 1000:$1.7000
BSC028N06NSATMA1
DISTI # 2432704RL		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$3.2900
  • 10:$2.8100
  • 100:$2.2300
  • 500:$1.9700
  • 1000:$1.7000
BSC028N06NSATMA1
DISTI # 2432704		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
RoHS: Compliant		2473
  • 1:£2.2800
  • 10:£1.1700
  • 100:£1.1100
Imagen Parte # Descripción
BSC028N06NSTATMA1

Mfr.#: BSC028N06NSTATMA1

OMO.#: OMO-BSC028N06NSTATMA1

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BSC028N06NSATMA1

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Mfr.#: BSC028N06LS3G

OMO.#: OMO-BSC028N06LS3G-1190

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BSC028N06LS3GATMA1

Mfr.#: BSC028N06LS3GATMA1

OMO.#: OMO-BSC028N06LS3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 100A TDSON-8
BSC028N06NS

Mfr.#: BSC028N06NS

OMO.#: OMO-BSC028N06NS-1190

 Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: BSC028N06NS)
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de BSC028N06NSATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,07 US$
1,07 US$
10
1,02 US$
10,20 US$
100
0,97 US$
96,65 US$
500
0,91 US$
456,40 US$
1000
0,86 US$
859,10 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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