 | |  | |
| PartNumber | BSC028N06NSATMA1 | BSC028N06NS | BSC028N06NS3G |
| Description | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | |
| Manufacturer | Infineon | Infineon | INFINEO |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | PG-TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 2.5 mOhms | 2.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 49 nC | 37 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 83 W | 83 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Product | OptiMOS Power | - | - |
| Series | OptiMOS 5 | OptiMOS 5 | BSC028N06 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS Power Transistor | - | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 50 S | 50 S | - |
| Fall Time | 8 ns | 8 ns | 8 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 38 ns | 38 ns | 38 ns |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 19 ns | 19 ns | 19 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 11 ns |
| Part # Aliases | BSC028N06NS BSC28N6NSXT SP000917416 | BSC028N06NSATMA1 BSC28N6NSXT SP000917416 | - |
| Unit Weight | - | 0.003527 oz | - |
| Part Aliases | - | - | BSC028N06NSATMA1 BSC028N06NSXT SP000917416 |
| Package Case | - | - | DSON-8 |
| Pd Power Dissipation | - | - | 83 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 100 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 2.8 mOhms |
| Qg Gate Charge | - | - | 37 nC |
| Forward Transconductance Min | - | - | 100 S / 50 S |