GS8161Z18DGD-333V

GS8161Z18DGD-333V
Mfr. #:
GS8161Z18DGD-333V
Fabricante:
GSI Technology
Descripción:
SRAM 1.8/2.5V 1M x 18 18M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8161Z18DGD-333V Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8161Z18DGD-333V más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
18 Mbit
Organización:
1 M x 18
Tiempo de acceso:
5 ns
Frecuencia máxima de reloj:
333 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
2.7 V
Voltaje de suministro - Min:
1.7 V
Corriente de suministro - Máx .:
220 mA, 280 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-165
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8161Z18DGD
Escribe:
NBT
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
18
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
NBT SRAM
Tags
GS8161Z18DGD-33, GS8161Z18DGD-3, GS8161Z18DGD, GS8161Z18DG, GS8161Z18D, GS8161Z1, GS8161Z, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 5ns/3ns 165-Pin FBGA
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Imagen Parte # Descripción
GS8161Z18DD-150I

Mfr.#: GS8161Z18DD-150I

OMO.#: OMO-GS8161Z18DD-150I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-200I

Mfr.#: GS8161Z18DGT-200I

OMO.#: OMO-GS8161Z18DGT-200I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-250I

Mfr.#: GS8161Z18DGT-250I

OMO.#: OMO-GS8161Z18DGT-250I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-200V

Mfr.#: GS8161Z18DGT-200V

OMO.#: OMO-GS8161Z18DGT-200V

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGD-150IV

Mfr.#: GS8161Z18DGD-150IV

OMO.#: OMO-GS8161Z18DGD-150IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGT-250IV

Mfr.#: GS8161Z18DGT-250IV

OMO.#: OMO-GS8161Z18DGT-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGD-333I

Mfr.#: GS8161Z18DGD-333I

OMO.#: OMO-GS8161Z18DGD-333I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-400

Mfr.#: GS8161Z18DGD-400

OMO.#: OMO-GS8161Z18DGD-400

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DD-400I

Mfr.#: GS8161Z18DD-400I

OMO.#: OMO-GS8161Z18DD-400I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-150I

Mfr.#: GS8161Z18DGT-150I

OMO.#: OMO-GS8161Z18DGT-150I

SRAM 2.5 or 3.3V 1M x 18 18M
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de GS8161Z18DGD-333V es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
27,62 US$
27,62 US$
25
25,64 US$
641,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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