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SIR186DP-T1-RE3

SIR186DP-T1-RE3
Mfr. #:
SIR186DP-T1-RE3
Fabricante:
Vishay
Descripción:
N-Channel 60 V (D-S) MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR186DP-T1-RE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
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ECAD Model:
Más información:
SIR186DP-T1-RE3 más información
Atributo del producto
Valor de atributo
Tags
SIR18, SIR1, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 60V 23A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 60V 60A POWERPAKSO-8
***ark
Mosfet, N-Ch, 60V, 0.06A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0037Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 0.06A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
MOSFET, CA-N, 60V, 0,06A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0037ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.6V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SIR186DP-T1-RE3
DISTI # V99:2348_22521044		Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET0
  • 3000000:$0.5343
  • 600000:$0.5350
  • 60000:$0.5357
  • 6000:$0.5358
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3TR-ND		Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 15000:$0.4899
  • 6000:$0.5090
  • 3000:$0.5358
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3CT-ND		Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5913
  • 500:$0.7490
  • 100:$0.9067
  • 10:$1.1630
  • 1:$1.3000
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3DKR-ND		Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5913
  • 500:$0.7490
  • 100:$0.9067
  • 10:$1.1630
  • 1:$1.3000
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R (Alt: SIR186DP-T1-RE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€0.4869
  • 500:€0.4929
  • 100:€0.5019
  • 50:€0.5089
  • 25:€0.5759
  • 10:€0.7099
  • 1:€0.9899
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIR186DP-T1-RE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.4669
  • 30000:$0.4799
  • 18000:$0.4929
  • 12000:$0.5139
  • 6000:$0.5299
SIR186DP-T1-RE3
DISTI # 37AC0918		Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.6V,Power RoHS Compliant: Yes0
  • 500:$0.7000
  • 250:$0.7570
  • 100:$0.8140
  • 50:$0.8960
  • 25:$0.9780
  • 10:$1.0600
  • 1:$1.2900
SIR186DP-T1-RE3
DISTI # 59AC7438		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
  • 10000:$0.4630
  • 6000:$0.4740
  • 4000:$0.4920
  • 2000:$0.5470
  • 1000:$0.6020
  • 1:$0.6270
SIR186DP-T1-RE3
DISTI # 78-SIR186DP-T1-RE3		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		0
  • 1:$1.2700
  • 10:$1.0400
  • 100:$0.8050
  • 500:$0.6920
  • 1000:$0.5460
  • 3000:$0.5100
SIR186DP-T1-RE3
DISTI # 2785448		Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO
RoHS: Compliant		0
  • 5000:$0.7840
  • 1000:$0.8120
  • 500:$0.8580
  • 250:$1.0100
  • 100:$1.2300
  • 25:$1.5700
  • 5:$1.8900
SIR186DP-T1-RE3
DISTI # 2785448		Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO0
  • 500:£0.5340
  • 250:£0.5780
  • 100:£0.6210
  • 10:£0.8660
  • 1:£1.1200
Imagen Parte # Descripción
SIR186DP-T1-RE3

Mfr.#: SIR186DP-T1-RE3

OMO.#: OMO-SIR186DP-T1-RE3

 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
SIR186DP-T1-RE3

Mfr.#: SIR186DP-T1-RE3

OMO.#: OMO-SIR186DP-T1-RE3-VISHAY

 N-Channel 60 V (D-S) MOSFET
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de SIR186DP-T1-RE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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