SIR186DP-T1-RE3

SIR186DP-T1-RE3
Mfr. #:
SIR186DP-T1-RE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR186DP-T1-RE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR186DP-T1-RE3 DatasheetSIR186DP-T1-RE3 Datasheet (P4-P6)SIR186DP-T1-RE3 Datasheet (P7-P9)SIR186DP-T1-RE3 Datasheet (P10-P12)SIR186DP-T1-RE3 Datasheet (P13)
ECAD Model:
Más información:
SIR186DP-T1-RE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
3.7 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.6 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
24.5 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
57 W
Configuración:
Único
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SEÑOR
Marca:
Vishay / Siliconix
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
22 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
14 ns
Tiempo típico de retardo de encendido:
10 ns
Tags
SIR18, SIR1, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 60V 23A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 60V 60A POWERPAKSO-8
***ark
Mosfet, N-Ch, 60V, 0.06A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0037Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 0.06A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
MOSFET, CA-N, 60V, 0,06A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0037ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.6V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SIR186DP-T1-RE3
DISTI # V99:2348_22521044
Vishay IntertechnologiesN-Channel 60 V (D-S) MOSFET0
  • 3000000:$0.5343
  • 600000:$0.5350
  • 60000:$0.5357
  • 6000:$0.5358
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3TR-ND
Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 15000:$0.4899
  • 6000:$0.5090
  • 3000:$0.5358
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3CT-ND
Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.5913
  • 500:$0.7490
  • 100:$0.9067
  • 10:$1.1630
  • 1:$1.3000
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3DKR-ND
Vishay SiliconixMOSFET N-CH 60V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.5913
  • 500:$0.7490
  • 100:$0.9067
  • 10:$1.1630
  • 1:$1.3000
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3
Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R (Alt: SIR186DP-T1-RE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 1000:€0.4869
  • 500:€0.4929
  • 100:€0.5019
  • 50:€0.5089
  • 25:€0.5759
  • 10:€0.7099
  • 1:€0.9899
SIR186DP-T1-RE3
DISTI # SIR186DP-T1-RE3
Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 60A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIR186DP-T1-RE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.4669
  • 30000:$0.4799
  • 18000:$0.4929
  • 12000:$0.5139
  • 6000:$0.5299
SIR186DP-T1-RE3
DISTI # 37AC0918
Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.6V,Power RoHS Compliant: Yes0
  • 500:$0.7000
  • 250:$0.7570
  • 100:$0.8140
  • 50:$0.8960
  • 25:$0.9780
  • 10:$1.0600
  • 1:$1.2900
SIR186DP-T1-RE3
DISTI # 59AC7438
Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET0
  • 10000:$0.4630
  • 6000:$0.4740
  • 4000:$0.4920
  • 2000:$0.5470
  • 1000:$0.6020
  • 1:$0.6270
SIR186DP-T1-RE3
DISTI # 78-SIR186DP-T1-RE3
Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant
0
  • 1:$1.2700
  • 10:$1.0400
  • 100:$0.8050
  • 500:$0.6920
  • 1000:$0.5460
  • 3000:$0.5100
SIR186DP-T1-RE3
DISTI # 2785448
Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO
RoHS: Compliant
0
  • 5000:$0.7840
  • 1000:$0.8120
  • 500:$0.8580
  • 250:$1.0100
  • 100:$1.2300
  • 25:$1.5700
  • 5:$1.8900
SIR186DP-T1-RE3
DISTI # 2785448
Vishay IntertechnologiesMOSFET, N-CH, 60V, 0.06A, POWERPAK SO0
  • 500:£0.5340
  • 250:£0.5780
  • 100:£0.6210
  • 10:£0.8660
  • 1:£1.1200
Imagen Parte # Descripción
INA138NA/250

Mfr.#: INA138NA/250

OMO.#: OMO-INA138NA-250

Current & Power Monitors & Regulators Hi-Sd Msmnt Current Shunt Mntr Crnt Otp
LTC4359IMS8#PBF

Mfr.#: LTC4359IMS8#PBF

OMO.#: OMO-LTC4359IMS8-PBF

Power Management Specialized - PMIC Ideal Diode Cntr w/ Reverse In Prot
USBLC6-2SC6

Mfr.#: USBLC6-2SC6

OMO.#: OMO-USBLC6-2SC6

TVS Diodes / ESD Suppressors ESD Protection Low Cap
BAT54XV2T1G

Mfr.#: BAT54XV2T1G

OMO.#: OMO-BAT54XV2T1G

Schottky Diodes & Rectifiers 30V 200mW Single
BAT54HT1G

Mfr.#: BAT54HT1G

OMO.#: OMO-BAT54HT1G

Schottky Diodes & Rectifiers 30V 200mW Single
INA138NA/250

Mfr.#: INA138NA/250

OMO.#: OMO-INA138NA-250-TEXAS-INSTRUMENTS

Current & Power Monitors & Regulators Hi-Sd Msmnt Current Shunt Mntr Crnt Otp
0603YC105KAT2A

Mfr.#: 0603YC105KAT2A

OMO.#: OMO-0603YC105KAT2A-AVX

Multilayer Ceramic Capacitors MLCC - Cap Ceramic 1uF 16V X7R 10% SMD 0603 125°C Paper T/R
USBLC6-2SC6

Mfr.#: USBLC6-2SC6

OMO.#: OMO-USBLC6-2SC6-STMICROELECTRONICS

TVS DIODE 5.25V 17V SOT23-6
C1608X5R1A106K080AC

Mfr.#: C1608X5R1A106K080AC

OMO.#: OMO-C1608X5R1A106K080AC-TDK

Multilayer Ceramic Capacitors MLCC - SMD/SMT 10uF 10% 10Volts
BAT54HT1G

Mfr.#: BAT54HT1G

OMO.#: OMO-BAT54HT1G-ON-SEMICONDUCTOR

Schottky Diodes & Rectifiers 30V 200mW Single
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de SIR186DP-T1-RE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,27 US$
1,27 US$
10
1,04 US$
10,40 US$
100
0,80 US$
80,50 US$
500
0,69 US$
346,00 US$
1000
0,55 US$
546,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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