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IKA08N65F5XKSA1

IKA08N65F5XKSA1
Mfr. #:
IKA08N65F5XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors IGBT PRODUCTS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKA08N65F5XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IKA08N65F5XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220FP-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
10.8 A
Pd - Disipación de energía:
31.2 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP 5 F5
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
500
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IKA08N65F5 SP000973414
Unidad de peso:
0.211644 oz
Tags
IKA08N65F, IKA08, IKA0, IKA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
***p One Stop Japan
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP
***et Europe
Trans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube
***ark
Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3
***i-Key
IGBT 650V 10.8A 31.2W TO220-3
***ronik
IGBT 650V 8A 1,6V TO220FP-3
***ment14 APAC
IGBT, 650V, 8A, TO220-3
***ukat
650V 10,8A 31,2W TO220-Fullpak
***nell
IGBT, 650V, 8A, TO220-3; Corrente di Collettore CC:8A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:31.2W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
Parte # Mfg. Descripción Valores Precio
IKA08N65F5XKSA1
DISTI # IKA08N65F5XKSA1-ND		Infineon Technologies AGIGBT 650V 10.8A 31.2W TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		416In Stock
  • 1000:$0.8803
  • 500:$1.0624
  • 100:$1.2931
  • 10:$1.6090
  • 1:$1.7900
IKA08N65F5XKSA1
DISTI # IKA08N65F5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKA08N65F5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.0199
  • 1000:$0.9829
  • 2000:$0.9469
  • 3000:$0.9159
  • 5000:$0.8989
IKA08N65F5XKSA1
DISTI # SP000973414		Infineon Technologies AGTrans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube (Alt: SP000973414)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.1109
  • 10:€1.0099
  • 25:€0.9259
  • 50:€0.8879
  • 100:€0.8539
  • 500:€0.8229
  • 1000:€0.7929
IKA08N65F5XKSA1
DISTI # 726-IKA08N65F5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		387
  • 1:$1.7100
  • 10:$1.4500
  • 100:$1.1600
  • 500:$1.0200
  • 1000:$0.8390
  • 2500:$0.7810
  • 5000:$0.7520
  • 10000:$0.7230
IKA08N65F5
DISTI # 726-IKA08N65F5-ES		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant		489
  • 1:$1.7400
  • 10:$1.4800
  • 100:$1.1900
  • 500:$1.0400
  • 1000:$0.8600
  • 2500:$0.8000
  • 5000:$0.7700
  • 10000:$0.7400
IKA08N65F5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 10.8A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant		500
  • 1000:$0.9400
  • 500:$0.9900
  • 100:$1.0300
  • 25:$1.0800
  • 1:$1.1600
IKA08N65F5XKSA1
DISTI # IKA08N65F5		Infineon Technologies AG650V 10,8A 31,2W TO220-Fullpak
RoHS: Compliant		345
  • 1:€4.9400
  • 10:€1.9400
  • 50:€0.9400
  • 100:€0.8600
IKA08N65F5XKSA1
DISTI # 2363281		Infineon Technologies AGIGBT, 650V, 8A, TO220-3
RoHS: Compliant		0
  • 5:£1.1900
  • 25:£1.0900
  • 100:£0.8780
  • 250:£0.8250
  • 500:£0.7720
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Disponibilidad
Valores:
385
En orden:
2368
Ingrese la cantidad:
El precio actual de IKA08N65F5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,08 US$
2,08 US$
10
1,77 US$
17,70 US$
100
1,41 US$
141,00 US$
500
1,24 US$
620,00 US$
1000
1,02 US$
1 020,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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