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GA20JT12-263

GA20JT12-263
Mfr. #:
GA20JT12-263
Fabricante:
GeneSiC Semiconductor
Descripción:
TRANS SJT 1200V 45A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GA20JT12-263 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
GA20JT12-263 más información
Atributo del producto
Valor de atributo
Fabricante
Semiconductor GeneSiC
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
GA20JT12
embalaje
Carrete
Unidad de peso
0.056438 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-263-7
Tecnología
Sic
Disipación de potencia Pd
282 W
Otoño
15 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
3.44 V
Id-corriente-de-drenaje-continua
45 A
Vds-Drain-Source-Breakdown-Voltage
1200 V
Resistencia a la fuente de desagüe de Rds
50 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
25 ns
Tiempo de retardo de encendido típico
15 ns
Qg-Gate-Charge
104 nC
Modo de canal
Mejora
Tags
GA20, GA2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
SIC JUNCTION TRANS, 1.2KV, 20A, TO-263
***i-Key
TRANS SJT 1200V 45A
GA20JT12 SiC Carbide Junction Transistors
GeneSiC GA20JT12 SiC Carbide Junction Transistors (SJT) are "Super-High" current gain SiC BJTs developed in 1200V to 10kV ratings. These SJTs are normally-off, compatible with standard MOSFET/IGBT drivers, and have the best temperature-independent switching and blocking performance. The GA20JT12 transistors operate at 175ºC (maximum), provide excellent gain linearity and low output capacitance. Features include gate oxide free SiC switch, optional gate return pin, and suitability for connecting an anti-parallel diode. The GA20JT12 advantages are >20µs short-circuit withstand capability and high amplifier bandwidth. Applications include down-hole oil drilling, motor drives, solar inverters, and induction heating.Learn more
Parte # Mfg. Descripción Valores Precio
GA20JT12-263
DISTI # 1242-1189-ND		GeneSic Semiconductor IncTRANS SJT 1200V 45A
RoHS: Compliant
Min Qty: 1
Container: Tube		252In Stock
  • 100:$31.8388
  • 50:$34.2570
  • 10:$37.2800
  • 1:$40.3000
GA20JT12-263
DISTI # 905-GA20JT12-263		GeneSic Semiconductor IncMOSFET 1200V 45A Standard
RoHS: Compliant		26
  • 1:$35.9200
  • 5:$34.1500
  • 10:$33.2300
  • 25:$32.3100
  • 50:$30.5400
  • 100:$28.3800
  • 250:$26.0500
Imagen Parte # Descripción
GA20JT12-263

Mfr.#: GA20JT12-263

OMO.#: OMO-GA20JT12-263

 MOSFET 1200V 45A Standard
GA20JT12-247

Mfr.#: GA20JT12-247

OMO.#: OMO-GA20JT12-247

 MOSFET 1200V 45A Standard
GA20JT12-247

Mfr.#: GA20JT12-247

OMO.#: OMO-GA20JT12-247-GENESIC-SEMICONDUCTOR

 TRANS SJT 1.2KV 20A
GA20JT12-263

Mfr.#: GA20JT12-263

OMO.#: OMO-GA20JT12-263-GENESIC-SEMICONDUCTOR

 TRANS SJT 1200V 45A
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de GA20JT12-263 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
39,08 US$
39,08 US$
10
37,12 US$
371,21 US$
100
35,17 US$
3 516,75 US$
500
33,21 US$
16 606,90 US$
1000
31,26 US$
31 260,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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