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GA20JT12-263

GA20JT12-263
Mfr. #:
GA20JT12-263
Fabricante:
GeneSiC Semiconductor
Descripción:
MOSFET 1200V 45A Standard
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GA20JT12-263 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GA20JT12-263 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor GeneSiC
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-7
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1.2 kV
Id - Corriente de drenaje continua:
45 A
Rds On - Resistencia de la fuente de drenaje:
50 mOhms
Vgs - Voltaje puerta-fuente:
3.44 V
Qg - Carga de puerta:
104 nC
Pd - Disipación de energía:
282 W
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
GA20JT12
Marca:
Semiconductor GeneSiC
Otoño:
15 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25 ns
Tiempo típico de retardo de encendido:
15 ns
Unidad de peso:
0.056438 oz
Tags
GA20, GA2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
SIC JUNCTION TRANS, 1.2KV, 20A, TO-263
***i-Key
TRANS SJT 1200V 45A
GA20JT12 SiC Carbide Junction Transistors
GeneSiC GA20JT12 SiC Carbide Junction Transistors (SJT) are "Super-High" current gain SiC BJTs developed in 1200V to 10kV ratings. These SJTs are normally-off, compatible with standard MOSFET/IGBT drivers, and have the best temperature-independent switching and blocking performance. The GA20JT12 transistors operate at 175ºC (maximum), provide excellent gain linearity and low output capacitance. Features include gate oxide free SiC switch, optional gate return pin, and suitability for connecting an anti-parallel diode. The GA20JT12 advantages are >20µs short-circuit withstand capability and high amplifier bandwidth. Applications include down-hole oil drilling, motor drives, solar inverters, and induction heating.Learn more
Parte # Mfg. Descripción Valores Precio
GA20JT12-263
DISTI # 1242-1189-ND		GeneSic Semiconductor IncTRANS SJT 1200V 45A
RoHS: Compliant
Min Qty: 1
Container: Tube		252In Stock
  • 100:$31.8388
  • 50:$34.2570
  • 10:$37.2800
  • 1:$40.3000
GA20JT12-263
DISTI # 905-GA20JT12-263		GeneSic Semiconductor IncMOSFET 1200V 45A Standard
RoHS: Compliant		26
  • 1:$35.9200
  • 5:$34.1500
  • 10:$33.2300
  • 25:$32.3100
  • 50:$30.5400
  • 100:$28.3800
  • 250:$26.0500
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Mfr.#: V8PM10SHM3/H

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GA10SICP12-263

Mfr.#: GA10SICP12-263

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SCT3080KLGC11

Mfr.#: SCT3080KLGC11

OMO.#: OMO-SCT3080KLGC11

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Disponibilidad
Valores:
25
En orden:
2008
Ingrese la cantidad:
El precio actual de GA20JT12-263 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
39,51 US$
39,51 US$
5
37,55 US$
187,75 US$
10
36,55 US$
365,50 US$
25
35,53 US$
888,25 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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