IXFN52N90P

IXFN52N90P
Mfr. #:
IXFN52N90P
Fabricante:
Littelfuse
Descripción:
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN52N90P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFN52N90P más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
900 V
Id - Corriente de drenaje continua:
43 A
Rds On - Resistencia de la fuente de drenaje:
160 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
132 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
890 W
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXFN52N90
Escribe:
MOSFET de potencia polar
Marca:
IXYS
Transconductancia directa - Mín .:
35 S / 20 S
Otoño:
42 ns
Tipo de producto:
MOSFET
Hora de levantarse:
80 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
95 ns
Tiempo típico de retardo de encendido:
63 ns
Unidad de peso:
1.340411 oz
Tags
IXFN52, IXFN5, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 900V 43A SOT227
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFN52N90P
DISTI # IXFN52N90P-ND
IXYS CorporationMOSFET N-CH 900V 43A SOT227
RoHS: Compliant
Min Qty: 200
Container: Tube
Limited Supply - Call
    IXFN52N90P
    DISTI # 747-IXFN52N90P
    IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
    RoHS: Compliant
    0
    • 1:$35.0300
    • 5:$34.6700
    • 10:$32.3100
    • 25:$30.8600
    • 100:$27.5900
    • 250:$26.3200
    Imagen Parte # Descripción
    IXFN52N100X

    Mfr.#: IXFN52N100X

    OMO.#: OMO-IXFN52N100X

    MOSFET 1000V 44A SOT-227 Power MOSFET
    IXFN520N075T2

    Mfr.#: IXFN520N075T2

    OMO.#: OMO-IXFN520N075T2

    MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
    IXFN55N50

    Mfr.#: IXFN55N50

    OMO.#: OMO-IXFN55N50

    MOSFET 55 Amps 500V 0.08 Rds
    IXFN50N50

    Mfr.#: IXFN50N50

    OMO.#: OMO-IXFN50N50

    MOSFET 50 Amps 500V 0.1 Rds
    IXFN50N80

    Mfr.#: IXFN50N80

    OMO.#: OMO-IXFN50N80-1190

    Nuevo y original
    IXFN50N80Q2

    Mfr.#: IXFN50N80Q2

    OMO.#: OMO-IXFN50N80Q2-IXYS-CORPORATION

    MOSFET N-CH 800V 50A SOT-227B
    IXFN55N50F

    Mfr.#: IXFN55N50F

    OMO.#: OMO-IXFN55N50F-IXYS-RF

    MOSFET N-CH 500V 55A SOT227B
    IXFN50N120SK

    Mfr.#: IXFN50N120SK

    OMO.#: OMO-IXFN50N120SK-IXYS-CORPORATION

    MOSFET N-CH
    IXFN50N50

    Mfr.#: IXFN50N50

    OMO.#: OMO-IXFN50N50-IXYS-CORPORATION

    MOSFET 50 Amps 500V 0.1 Rds
    IXFN55N50

    Mfr.#: IXFN55N50

    OMO.#: OMO-IXFN55N50-IXYS-CORPORATION

    IGBT Transistors MOSFET 55 Amps 500V 0.08 Rds
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de IXFN52N90P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    35,03 US$
    35,03 US$
    5
    34,67 US$
    173,35 US$
    10
    32,31 US$
    323,10 US$
    25
    30,86 US$
    771,50 US$
    100
    27,59 US$
    2 759,00 US$
    250
    26,32 US$
    6 580,00 US$
    Empezar con
    Nuevos productos
    Top