IXFN52N100X

IXFN52N100X
Mfr. #:
IXFN52N100X
Fabricante:
Littelfuse
Descripción:
MOSFET 1000V 44A SOT-227 Power MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN52N100X Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFN52N100X más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-227-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1000 V
Id - Corriente de drenaje continua:
44 A
Rds On - Resistencia de la fuente de drenaje:
125 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
245 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
830 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
Clase X
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Transconductancia directa - Mín .:
23 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
107 ns
Tiempo típico de retardo de encendido:
34 ns
Tags
IXFN52, IXFN5, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Parte # Mfg. Descripción Valores Precio
IXFN52N100X
DISTI # IXFN52N100X-ND
IXYS CorporationMOSFET 1KV 44A ULTRA JCT SOT227
RoHS: Compliant
Min Qty: 1
Container: Tube
10In Stock
  • 100:$31.2840
  • 30:$33.6600
  • 10:$36.6300
  • 1:$39.6000
IXFN52N100X
DISTI # 747-IXFN52N100X
IXYS CorporationMOSFET 1000V 44A SOT-227 Power MOSFET
RoHS: Compliant
24
  • 1:$39.6000
  • 5:$37.6200
  • 10:$36.6300
  • 25:$33.6600
  • 50:$32.2300
  • 100:$31.2900
  • 250:$28.7100
Imagen Parte # Descripción
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Mfr.#: IXDD614PI

OMO.#: OMO-IXDD614PI

Gate Drivers 14-Ampere Low-Side Ultrafast MOSFET
RC0603FR-071ML

Mfr.#: RC0603FR-071ML

OMO.#: OMO-RC0603FR-071ML

Thick Film Resistors - SMD 1M OHM 1%
IXDD614PI

Mfr.#: IXDD614PI

OMO.#: OMO-IXDD614PI-IXYS-INTEGRATED-CIRCUITS-DIVIS

Gate Drivers 14-Ampere Low-Side Ultrafast MOSFET
1285

Mfr.#: 1285

OMO.#: OMO-1285-POMONA-ELECTRONICS

Terminals TERMINAL .187X.020
MS32 20008

Mfr.#: MS32 20008

OMO.#: OMO-MS32-20008-AMETHERM

Inrush Current Limiters 32mm 20ohms 8A INRSH CURR LIMITER
RC0603FR-071ML

Mfr.#: RC0603FR-071ML

OMO.#: OMO-RC0603FR-071ML-YAGEO

Thick Film Resistors - SMD 1M OHM 1%
Disponibilidad
Valores:
24
En orden:
2007
Ingrese la cantidad:
El precio actual de IXFN52N100X es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
39,60 US$
39,60 US$
5
37,62 US$
188,10 US$
10
36,63 US$
366,30 US$
25
33,66 US$
841,50 US$
50
32,23 US$
1 611,50 US$
100
31,29 US$
3 129,00 US$
250
28,71 US$
7 177,50 US$
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