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BSC093N04LSGATMA1

BSC093N04LSGATMA1
Mfr. #:
BSC093N04LSGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 40V 49A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC093N04LSGATMA1 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
BSC093N04LSGATMA1 DatasheetBSC093N04LSGATMA1 Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET - Single
Serie
OptiMOS
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
BSC093N04LS BSC093N04LSGXT G SP000387929
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
8-PowerTDFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PG-TDSON-8
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
35W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
40V
Entrada-Capacitancia-Ciss-Vds
1900pF @ 20V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
13A (Ta), 49A (Tc)
Rds-On-Max-Id-Vgs
9.3 mOhm @ 40A, 10V
Vgs-th-Max-Id
2V @ 14μA
Puerta-Carga-Qg-Vgs
24nC @ 10V
Disipación de potencia Pd
35 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
2.8 ns
Hora de levantarse
2.4 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
49 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Vgs-th-Gate-Source-Threshold-Voltage
2 V
Resistencia a la fuente de desagüe de Rds
9.3 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
16 ns
Tiempo de retardo de encendido típico
3.6 ns
Qg-Gate-Charge
18 nC
Transconductancia directa-Mín.
67 S
Modo de canal
Mejora
Tags
BSC093N04LSGA, BSC093N04LSG, BSC093N0, BSC093, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 49A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.3323
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 49A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4057
  • 500:$0.5071
  • 100:$0.6846
  • 10:$0.8870
  • 1:$1.0100
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 49A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4057
  • 500:$0.5071
  • 100:$0.6846
  • 10:$0.8870
  • 1:$1.0100
BSC093N04LSGATMA1
DISTI # BSC093N04LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC093N04LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2569
  • 10000:$0.2479
  • 20000:$0.2389
  • 30000:$0.2309
  • 50000:$0.2269
BSC093N04LSGATMA1.
DISTI # 27AC1075		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:49A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:35W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.2570
  • 10000:$0.2480
  • 20000:$0.2390
  • 30000:$0.2310
  • 50000:$0.2270
BSC093N04LSGATMA1
DISTI # 726-BSC093N04LSGATMA		Infineon Technologies AGMOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
RoHS: Compliant		5260
  • 1:$0.8400
  • 10:$0.6940
  • 100:$0.4480
  • 1000:$0.3590
BSC093N04LS G
DISTI # 726-BSC093N04LSG		Infineon Technologies AGMOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$0.8400
  • 10:$0.6940
  • 100:$0.4480
  • 1000:$0.3590
BSC093N04LSGATMA1
DISTI # 7528164P		Infineon Technologies AGMOSFET N-CHANNEL 40V 13A OPTIMOS3 TDSON8, RL4850
  • 50:£0.4380
  • 250:£0.2820
  • 1250:£0.2240
  • 2500:£0.2200
BSC093N04LSGATMA1
DISTI # 1775460		Infineon Technologies AGMOSFET, N CH, 49A, 40V, PG-TDSON-8
RoHS: Compliant		0
  • 1:$1.3400
  • 10:$1.1100
  • 100:$0.7090
  • 1000:$0.5690
  • 5000:$0.5010
BSC093N04LSGATMA1
DISTI # 1775460		Infineon Technologies AGMOSFET, N CH, 49A, 40V, PG-TDSON-8
RoHS: Compliant		0
  • 5:£0.5020
  • 25:£0.4730
  • 100:£0.3400
Imagen Parte # Descripción
BSC093N04LS G

Mfr.#: BSC093N04LS G

OMO.#: OMO-BSC093N04LS-G

 MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
BSC093N04LS

Mfr.#: BSC093N04LS

OMO.#: OMO-BSC093N04LS-1190

 Nuevo y original
BSC093N04LS G

Mfr.#: BSC093N04LS G

OMO.#: OMO-BSC093N04LS-G-1190

 Trans MOSFET N-CH 40V 13A 8-Pin TDSON T/R (Alt: BSC093N04LS G)
BSC093N04LSG

Mfr.#: BSC093N04LSG

OMO.#: OMO-BSC093N04LSG-1190

 40V,49A,N Channel Power MOSFET
BSC093N04LSGATMA1

Mfr.#: BSC093N04LSGATMA1

OMO.#: OMO-BSC093N04LSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 49A TDSON-8
BSC093N04LSGATMA1 , TDZ

Mfr.#: BSC093N04LSGATMA1 , TDZ

OMO.#: OMO-BSC093N04LSGATMA1-TDZ-1190

 Nuevo y original
BSC093N04LSGATMA1-CUT TAPE

Mfr.#: BSC093N04LSGATMA1-CUT TAPE

OMO.#: OMO-BSC093N04LSGATMA1-CUT-TAPE-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de BSC093N04LSGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,34 US$
0,34 US$
10
0,32 US$
3,23 US$
100
0,31 US$
30,63 US$
500
0,29 US$
144,65 US$
1000
0,27 US$
272,30 US$
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