BSC093N04LSGATMA1

Mfr. #:: BSC093N04LSGATMA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-CH 40V 49A TDSON-8
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: BSC093N04LSGATMA1 Ficha de datos
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Fabricante: Infineon Technologies

categoria de producto: FET - Single

Serie: OptiMOS

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: BSC093N04LS BSC093N04LSGXT G SP000387929

Estilo de montaje: SMD / SMT

Nombre comercial: OptiMOS

Paquete-Estuche: 8-PowerTDFN

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: PG-TDSON-8

Configuración: Único

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 35W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 40V

Entrada-Capacitancia-Ciss-Vds: 1900pF @ 20V

Función FET: Puerta de nivel lógico

Corriente-Continuo-Drenaje-Id-25 ° C: 13A (Ta), 49A (Tc)

Rds-On-Max-Id-Vgs: 9.3 mOhm @ 40A, 10V

Vgs-th-Max-Id: 2V @ 14μA

Puerta-Carga-Qg-Vgs: 24nC @ 10V

Disipación de potencia Pd: 35 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 2.8 ns

Hora de levantarse: 2.4 ns

Vgs-Puerta-Fuente-Voltaje: +/- 20 V

Id-corriente-de-drenaje-continua: 49 A

Vds-Drain-Source-Breakdown-Voltage: 40 V

Vgs-th-Gate-Source-Threshold-Voltage: 2 V

Resistencia a la fuente de desagüe de Rds: 9.3 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 16 ns

Tiempo de retardo de encendido típico: 3.6 ns

Qg-Gate-Charge: 18 nC

Transconductancia directa-Mín.: 67 S

Modo de canal: Mejora

Tags: BSC093N04LSGA, BSC093N04LSG, BSC093N0, BSC093, BSC09, BSC0, BSC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descripción	Valores	Precio
BSC093N04LSGATMA1 DISTI # BSC093N04LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 49A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.3323
BSC093N04LSGATMA1 DISTI # BSC093N04LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 49A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.4057 500:$0.5071 100:$0.6846 10:$0.8870 1:$1.0100
BSC093N04LSGATMA1 DISTI # BSC093N04LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 49A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.4057 500:$0.5071 100:$0.6846 10:$0.8870 1:$1.0100
BSC093N04LSGATMA1 DISTI # BSC093N04LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC093N04LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.2569 10000:$0.2479 20000:$0.2389 30000:$0.2309 50000:$0.2269
BSC093N04LSGATMA1. DISTI # 27AC1075	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:49A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:35W,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.2570 10000:$0.2480 20000:$0.2390 30000:$0.2310 50000:$0.2270
BSC093N04LSGATMA1 DISTI # 726-BSC093N04LSGATMA	Infineon Technologies AG	MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 RoHS: Compliant	5260	1:$0.8400 10:$0.6940 100:$0.4480 1000:$0.3590
BSC093N04LS G DISTI # 726-BSC093N04LSG	Infineon Technologies AG	MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$0.8400 10:$0.6940 100:$0.4480 1000:$0.3590
BSC093N04LSGATMA1 DISTI # 7528164P	Infineon Technologies AG	MOSFET N-CHANNEL 40V 13A OPTIMOS3 TDSON8, RL	4850	50:£0.4380 250:£0.2820 1250:£0.2240 2500:£0.2200
BSC093N04LSGATMA1 DISTI # 1775460	Infineon Technologies AG	MOSFET, N CH, 49A, 40V, PG-TDSON-8 RoHS: Compliant	0	1:$1.3400 10:$1.1100 100:$0.7090 1000:$0.5690 5000:$0.5010
BSC093N04LSGATMA1 DISTI # 1775460	Infineon Technologies AG	MOSFET, N CH, 49A, 40V, PG-TDSON-8 RoHS: Compliant	0	5:£0.5020 25:£0.4730 100:£0.3400

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: BSC093N04LS G OMO.#: OMO-BSC093N04LS-G	MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
	Mfr.#: BSC093N04LS OMO.#: OMO-BSC093N04LS-1190	Nuevo y original
	Mfr.#: BSC093N04LS G OMO.#: OMO-BSC093N04LS-G-1190	Trans MOSFET N-CH 40V 13A 8-Pin TDSON T/R (Alt: BSC093N04LS G)
	Mfr.#: BSC093N04LSG OMO.#: OMO-BSC093N04LSG-1190	40V,49A,N Channel Power MOSFET
	Mfr.#: BSC093N04LSGATMA1 OMO.#: OMO-BSC093N04LSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 49A TDSON-8
	Mfr.#: BSC093N04LSGATMA1 , TDZ OMO.#: OMO-BSC093N04LSGATMA1-TDZ-1190	Nuevo y original
	Mfr.#: BSC093N04LSGATMA1-CUT TAPE OMO.#: OMO-BSC093N04LSGATMA1-CUT-TAPE-1190	Nuevo y original

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El precio actual de BSC093N04LSGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,34 US$~~; ~~0,34 US$~~

10: ~~0,32 US$~~; ~~3,23 US$~~

100: ~~0,31 US$~~; ~~30,63 US$~~

500: ~~0,29 US$~~; ~~144,65 US$~~

1000: ~~0,27 US$~~; ~~272,30 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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BSC093N04LSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes