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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSC093N04LSGATMA1 DISTI # BSC093N04LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 40V 49A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC093N04LSGATMA1 DISTI # BSC093N04LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 40V 49A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC093N04LSGATMA1 DISTI # BSC093N04LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 40V 49A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC093N04LS G DISTI # BSC093N04LS G | Infineon Technologies AG | Trans MOSFET N-CH 40V 13A 8-Pin TDSON T/R (Alt: BSC093N04LS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC093N04LSGATMA1 DISTI # BSC093N04LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 40V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC093N04LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC093N04LSGATMA1. DISTI # 27AC1075 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:49A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:35W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| BSC093N04LSGATMA1 DISTI # 726-BSC093N04LSGATMA | Infineon Technologies AG | MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 RoHS: Compliant | 5260 |
|
| BSC093N04LS G DISTI # 726-BSC093N04LSG | Infineon Technologies AG | MOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
| BSC093N04LSGATMA1 DISTI # 7528164P | Infineon Technologies AG | MOSFET N-CHANNEL 40V 13A OPTIMOS3 TDSON8, RL | 4850 |
|
| BSC093N04LS G | Infineon Technologies AG | 20 | ||
| BSC093N04LSG | Infineon Technologies AG | 145 | ||
| BSC093N04LSG | Infineon Technologies AG | 40V,49A,N Channel Power MOSFET | 40 |
|
| BSC093N04LSGATMA1 DISTI # 1775460 | Infineon Technologies AG | MOSFET, N CH, 49A, 40V, PG-TDSON-8 RoHS: Compliant | 0 |
|
| BSC093N04LSGATMA1 DISTI # 1775460 | Infineon Technologies AG | MOSFET, N CH, 49A, 40V, PG-TDSON-8 RoHS: Compliant | 0 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSC0910NDIATMA1 OMO.#: OMO-BSC0910NDIATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC0904NSI OMO.#: OMO-BSC0904NSI |
MOSFET N-Ch 30V 78A TDSON-8 OptiMOS |
|
|
Mfr.#: BSC0901NSIATMA1 OMO.#: OMO-BSC0901NSIATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC0901NS , TDZ TR 10 , |
Nuevo y original |
|
Mfr.#: BSC0902NSATMA1 |
MOSFET N-CH 30V 100A 8TDSON |
|
|
Mfr.#: BSC0909NS 0909NS OMO.#: OMO-BSC0909NS-0909NS-1190 |
Nuevo y original |
|
|
Mfr.#: BSC090N03LSG OMO.#: OMO-BSC090N03LSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC090N03MSGATMA1 , TDZ |
Nuevo y original |
|
|
Mfr.#: BSC091N03MSCG OMO.#: OMO-BSC091N03MSCG-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC0993NDATMA1 |
MOSFET N-CH 30V 8TISON |