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IRF5803D2TRPBF

IRF5803D2TRPBF
Mfr. #:
IRF5803D2TRPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFT PCh w/Schttky -3.4A 112mOhm 25nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF5803D2TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF5803D2TRPBF DatasheetIRF5803D2TRPBF Datasheet (P4-P6)IRF5803D2TRPBF Datasheet (P7-P9)IRF5803D2TRPBF Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
3.4 A
Rds On - Resistencia de la fuente de drenaje:
190 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
25 nC
Pd - Disipación de energía:
2 W
Configuración:
Único
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Tipo de transistor:
1 P-Channel
Ancho:
3.9 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
4000
Subcategoría:
MOSFET
Parte # Alias:
SP001554068
Unidad de peso:
0.019048 oz
Tags
IRF5803D2T, IRF5803D2, IRF5803D, IRF5803, IRF580, IRF58, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET P-CH Si 40V 3.4A 8-Pin SOIC T/R / MOSFET P-CH 40V 3.4A 8-SOIC
***(Formerly Allied Electronics)
-40V FETKY - MOSFET and Schottky Diode in a SO-8 package
***ment14 APAC
MOSFET, P CH, 40V, 3.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:40V; On Resistance Rds(on):112mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-3.4A; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:27A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
IRF7103PBF Dual N-channel MOSFET Transistor; 3 A; 50 V; 8-Pin SOIC
***eco
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***itex
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***ure Electronics
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***et Europe
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***nell
MOSFET, DUAL NN LOGIC SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Di
***ark
Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:50V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:3A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
***et Europe
Transistor MOSFET Array Dual P-CH 30V 3.6A 8-Pin SOIC T/R
***ure Electronics
Dual P-Channel 30 V 100 mOhm 25 nC HEXFET® Power Mosfet - SOIC-8
*** Stop Electro
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Po
***ark
Channel Type:dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:3.6A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes
***emi
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 3.5A, 90mΩ
*** Source Electronics
Trans MOSFET N-CH 30V 3.5A 8-Pin SOIC T/R / MOSFET 2N-CH 30V 3.5A 8SOIC
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, NN CH, 30V, 3.5A, 8SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Dual N & P-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SOIC-8
***Yang
Trans MOSFET N/P-CH 30V 3.9A/3.5A 8-Pin SOIC N T/R - Tape and Reel
***emi
Dual N & P Channel Enhancement Mode Field Effect Transistor
***r Electronics
Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***rchild Semiconductor
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
***ark
Dual Mosfet, Dual P Channel, -4 A, -30 V, 0.07 Ohm, 10 V, 1 V Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;Dual P-Ch;VDSS 30V;RDS(ON) 0.07Ohm;ID 4A;SO-8;PD 2W;VGS +/-16V;-55
***ure Electronics
Dual P-Channel 30 V 0.08 Ohm Surface Mount STripFET MosFet - SOIC-8
***icroelectronics
DUAL P-CHANNEL 30V - 0.07 OHM - 4A SO-8 STripFET POWER MOSFET
***nell
MOSFET, PP CH, 30V, 4A, 8SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
Parte # Mfg. Descripción Valores Precio
IRF5803D2TRPBF
DISTI # IRF5803D2TRPBFTR-ND		Infineon Technologies AGMOSFET P-CH 40V 3.4A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF5803D2TRPBF
    DISTI # IRF5803D2TRPBFCT-ND    		Infineon Technologies AGMOSFET P-CH 40V 3.4A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF5803D2TRPBF
      DISTI # IRF5803D2TRPBFDKR-ND      		Infineon Technologies AGMOSFET P-CH 40V 3.4A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF5803D2TRPBF
        DISTI # 70018813        		Infineon Technologies AG-40V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE
        RoHS: Compliant        		0
        • 4000:$1.1200
        • 8000:$1.0980
        • 20000:$1.0640
        • 40000:$1.0190
        • 100000:$0.9520
        IRF5803D2TRPBF
        DISTI # 942-IRF5803D2TRPBF        		Infineon Technologies AGMOSFET MOSFT PCh w/Schttky -3.4A 112mOhm 25nC
        RoHS: Compliant        		0
          IRF5803D2TRPBF
          DISTI # 1298542RL          		Infineon Technologies AGMOSFET, P CH, 40V, 3.4A, SO8
          RoHS: Compliant          		0
          • 1:$0.9340
          • 10:$0.7690
          • 25:$0.6230
          • 50:$0.5560
          • 100:$0.4940
          • 250:$0.4590
          • 500:$0.4430
          • 1000:$0.4150
          IRF5803D2TRPBF
          DISTI # 1298542          		Infineon Technologies AGMOSFET, P CH, 40V, 3.4A, SO8
          RoHS: Compliant          		0
          • 1:$0.9340
          • 10:$0.7690
          • 25:$0.6230
          • 50:$0.5560
          • 100:$0.4940
          • 250:$0.4590
          • 500:$0.4430
          • 1000:$0.4150
          Imagen Parte # Descripción
          IRF5803TRPBF

          Mfr.#: IRF5803TRPBF

          OMO.#: OMO-IRF5803TRPBF

          		 MOSFET MOSFT PCh -40V -3.4A 112mOhm 25nC
          IRF5803D2TRPBF

          Mfr.#: IRF5803D2TRPBF

          OMO.#: OMO-IRF5803D2TRPBF

          		 MOSFET MOSFT PCh w/Schttky -3.4A 112mOhm 25nC
          IRF5803D2TRPBF.

          Mfr.#: IRF5803D2TRPBF.

          OMO.#: OMO-IRF5803D2TRPBF--1190

          		 Nuevo y original
          IRF5803TRPBF-CUT TAPE

          Mfr.#: IRF5803TRPBF-CUT TAPE

          OMO.#: OMO-IRF5803TRPBF-CUT-TAPE-1190

          		 Nuevo y original
          IRF5803TRPBF.

          Mfr.#: IRF5803TRPBF.

          OMO.#: OMO-IRF5803TRPBF--1190

          		 Transistor Polarity:P Channel, Continuous Drain Current Id:3.4A, Drain Source Voltage Vds:-40V, On Resistance Rds(on):0.112ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:-3V, Power Dis
          IRF5803

          Mfr.#: IRF5803

          OMO.#: OMO-IRF5803-INFINEON-TECHNOLOGIES

          		 MOSFET P-CH 40V 3.4A 6-TSOP
          IRF5803D2

          Mfr.#: IRF5803D2

          OMO.#: OMO-IRF5803D2-INFINEON-TECHNOLOGIES

          		 MOSFET P-CH 40V 3.4A 8-SOIC
          IRF5803D2PBF

          Mfr.#: IRF5803D2PBF

          OMO.#: OMO-IRF5803D2PBF-INFINEON-TECHNOLOGIES

          		 MOSFET P-CH 40V 3.4A 8-SOIC
          IRF5803D2TR

          Mfr.#: IRF5803D2TR

          OMO.#: OMO-IRF5803D2TR-INFINEON-TECHNOLOGIES

          		 MOSFET P-CH 40V 3.4A 8-SOIC
          IRF5803TRPBF

          Mfr.#: IRF5803TRPBF

          OMO.#: OMO-IRF5803TRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET P-CH 40V 3.4A 6-TSOP
          Disponibilidad
          Valores:
          Available
          En orden:
          3000
          Ingrese la cantidad:
          El precio actual de IRF5803D2TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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