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IRF7467PBF

IRF7467PBF
Mfr. #:
IRF7467PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 30V 1 N-CH HEXFET 15mOhms 21nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF7467PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7467PBF DatasheetIRF7467PBF Datasheet (P4-P6)IRF7467PBF Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
10 A
Rds On - Resistencia de la fuente de drenaje:
13.5 mOhms
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
21 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.5 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
1.75 mm
Longitud:
4.9 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET Smps
Ancho:
3.9 mm
Marca:
Infineon / IR
Otoño:
4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
2.5 ns
Cantidad de paquete de fábrica:
4085
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
19 ns
Tiempo típico de retardo de encendido:
7.8 ns
Parte # Alias:
SP001551398
Unidad de peso:
0.019048 oz
Tags
IRF7467, IRF746, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.4 Milliohms;ID 11A;SO-8;PD 2.5W;VGS +/-12V
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET N-CH 30V 11A 8-Pin SOIC
***i-Key
MOSFET N-CH 30V 11A 8-SOIC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***nell
MOSFET, N, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:11A; Resistance, Rds On:0.012ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:90A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Power Dissipation:2.5W; Power, Pd:2.5W; SMD Marking:F7467; Temperature, Tj Min:-55°C; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:2V; Width, External:4.05mm
***ment14 APAC
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Junction Temperature Tj Min:-55°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:90A; SMD Marking:F7467; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Parte # Mfg. Descripción Valores Precio
IRF7467PBF
DISTI # IRF7467PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 4085
Container: Tube		Limited Supply - Call
    IRF7467PBF
    DISTI # 70017587    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 9.4 Milliohms,ID 11A,SO-8,PD 2.5W,VGS +/-12V
    RoHS: Compliant    		0
    • 1:$1.0600
    • 2:$1.0390
    • 5:$1.0070
    • 10:$0.9650
    • 25:$0.9010
    IRF7467PBF
    DISTI # 9102647    		Infineon Technologies AG 
    RoHS: Compliant    		0
    • 1000:$0.8750
    • 500:$0.9410
    • 250:$1.0600
    • 100:$1.1900
    • 10:$1.4700
    • 1:$1.7800
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    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de IRF7467PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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