IRF7450PBF

Mfr. #:: IRF7450PBF
Fabricante:: Infineon Technologies
Descripción:: MOSFET 200V 1 N-CH HEXFET 170mOhms 26nC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRF7450PBF Ficha de datos
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HTML Datasheet:: IRF7450PBF Datasheet IRF7450PBF Datasheet (P4-P6)IRF7450PBF Datasheet (P7-P8)
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Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: SO-8

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 200 V

Id - Corriente de drenaje continua:: 2.5 A

Rds On - Resistencia de la fuente de drenaje:: 170 mOhms

Vgs - Voltaje puerta-fuente:: 30 V

Qg - Carga de puerta:: 26 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 3 W

Configuración:: Único

Modo de canal:: Mejora

Embalaje:: Tubo

Altura:: 1.75 mm

Longitud:: 4.9 mm

Tipo de transistor:: 1 N-Channel

Escribe:: MOSFET Smps

Ancho:: 3.9 mm

Marca:: Infineon Technologies

Otoño:: 18 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 3 ns

Cantidad de paquete de fábrica:: 3800

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 17 ns

Tiempo típico de retardo de encendido:: 10 ns

Parte # Alias:: SP001559868

Unidad de peso:: 0.019048 oz

Tags: IRF7450, IRF745, IRF74, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

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IRF7450PBF Descripción

***ure Electronics: Single N-Channel 200 V 0.17 Ohm 39 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 200V 2.5A 8-Pin SOIC T/R

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ark: Mosfet, N-Ch, 200V, 2.5A, Soic-8; Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Rohs Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***ark: Mosfet Transistor, N Channel, 1.9 A, 150 V, 280 Mohm, 10 V, 5.5 V Rohs Compliant: Yes

***(Formerly Allied Electronics): IRF7465PBF N-channel MOSFET Transistor,1.9 A, 150 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 150 V 0.28 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC Tube

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

*** Stop Electro: Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.9A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 30 / Fall Time ns = 9 / Rise Time ns = 1.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.5

***ure Electronics: Single N-Channel 200 V 275 mOhm 43 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET,200V, 3.0A, 130mΩ

*** Source Electronics: MOSFET N-CH 200V 3A 8-SO / Trans MOSFET N-CH 200V 3A 8-Pin SOIC T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):0.13ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 200V, 3A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***ponent Stockers USA: 3 A 150 V 0.095 ohm N-CHANNEL Si POWER MOSFET MS-012AA

***i-Key: MOSFET N-CH 150V 3A 8-SOP

***ser: MOSFETs SO-8

***(Formerly Allied Electronics): SI7464DP-T1-E3 N-channel MOSFET Transistor; 1.8 A; 200 V; 8-Pin SOIC

***ow.cn: SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com

***ical: Trans MOSFET N-CH 200V 1.8A 8-Pin PowerPAK SO T/R

***ponent Sense: TRANSISTOR MOSFET POWER N- CHANNEL 2

***ark: N-Ch 200-V (D-S) Fast Switching Mosfet

***ronik: N-CH 200V 2A 240mOhm PPSO-8 RoHSconf

***eco: N-CH POWERPAK SO-8 200V 240MOHM @ 10V

***(Formerly Allied Electronics): SI7898DP-T1-E3 N-channel MOSFET Transistor; 3 A; 150 V; 8-Pin SOIC

***ure Electronics: Single N-Channel 150 V 0.085 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8

***et: Trans MOSFET N-CH 150V 4.8A 8-Pin PowerPAK SOIC

***ment14 APAC: N CHANNEL MOSFET, 150V, 4.8A, SOIC; Tran; N CHANNEL MOSFET, 150V, 4.8A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:150V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; No. of Pins:8

***ure Electronics: Single N-Channel 150 V 0.09 Ohm 41 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R / MOSFET N-CH 150V 3.6A 8-SOIC

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:30V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***nell: MOSFET, N-CH, 150V, 3.6A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: Single P-Channel 60 V 0.19 Ohm 9 nC 2.5 mW Silicon SMT Mosfet - SOIC-8

***p One Stop: Trans MOSFET P-CH 60V 3.42A Automotive 8-Pin SO T/R

***i-Key: MOSFET P-CH 60V 2.7A 8SO

***(Formerly Allied Electronics): MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W

***ure Electronics: SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8

***enic: 60V 4.7A 2.4W 120m´Î@10V3.2A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***nsix Microsemi: Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No

***nell: MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

***icroelectronics: P-channel 60 V, 0.13 Ohm typ., 3 A STripFET F6 Power MOSFET in a SO-8 package

***ure Electronics: P-Channel 60 V 160 mOhm Surface Mount STripFET F6 Power Mosfet SOIC-8

***et: Trans MOSFET P-CH 60V 3A 8-Pin SOIC T/R

***ure Electronics: Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -9.2A, 19.4 MOHM, 25VGS, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ment14 APAC: MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.2A; Source Voltage Vds:-30V; On Resistance

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***roFlash: Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0133ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 6.3Milliohms;ID 14A;SO-8;PD 2.5W;VGS +/-30V

***ure Electronics: Single N-Channel 30 V 8 mOhm 59 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 14A 8-Pin SOIC Tube

***ment14 APAC: MOSFET, N-CH, 30V, 14A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Source Voltage Vds:30V; On Resistance

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:14A; Resistance, Rds On:0.008ohm; Voltage, Vgs Rds on Measurement:16V; Voltage, Vgs th Typ:4V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:110A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Power Dissipation:2.5W; Power, Pd:2.5W; SMD Marking:F7458; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V; Width, External:4.05mm

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IRF7450PBF DISTI # 27053951	Infineon Technologies AG	Trans MOSFET N-CH 200V 2.5A 8-Pin SOIC Tube RoHS: Compliant	1465	38000:$0.4809 19000:$0.4818 7602:$0.4837 3802:$0.4847 3800:$0.4866
IRF7450TRPBF DISTI # IRF7450PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 200V 2.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7752In Stock	1000:$0.8010 500:$1.0146 100:$1.3083 10:$1.6550 1:$1.8700
IRF7450TRPBF DISTI # IRF7450PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 2.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7752In Stock	1000:$0.8010 500:$1.0146 100:$1.3083 10:$1.6550 1:$1.8700
IRF7450TRPBF DISTI # IRF7450PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 200V 2.5A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	4000In Stock	4000:$0.7258
IRF7450PBF DISTI # IRF7450PBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 2.5A 8-SOIC RoHS: Compliant Min Qty: 3800 Container: Tube	Limited Supply - Call
IRF7450PBF DISTI # C1S322000590502	Infineon Technologies AG	MOSFETs RoHS: Compliant	1465	1000:$0.7510 500:$0.8130 100:$0.9050 50:$1.0700 25:$1.2000 5:$1.6500
IRF7450PBF DISTI # IRF7450PBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 2.5A 8-Pin SOIC - Rail/Tube (Alt: IRF7450PBF) RoHS: Compliant Min Qty: 3800 Container: Tube	Americas - 4738
IRF7450PBF DISTI # SP001559868	Infineon Technologies AG	Trans MOSFET N-CH 200V 2.5A 8-Pin SOIC (Alt: SP001559868) RoHS: Compliant Min Qty: 1	Europe - 477	1:€0.6139 10:€0.5549 25:€0.5539 50:€0.5529 100:€0.4969 500:€0.4469 1000:€0.4129
IRF7450PBF DISTI # 70019635	Infineon Technologies AG	IRF7450PBF N-channel MOSFET Transistor,2.5 A,200 V,8-Pin SOIC RoHS: Compliant	0	10:$1.5000
IRF7450PBF	Infineon Technologies AG	Single N-Channel 200 V 170 mOhm 39 nC HEXFET Power Mosfet - SOIC-8 RoHS: Compliant	490Tube	15:$0.8000 500:$0.7300
IRF7450PBF DISTI # 942-IRF7450PBF	Infineon Technologies AG	MOSFET 200V 1 N-CH HEXFET 170mOhms 26nC RoHS: Compliant	4219	1:$1.6300 10:$1.3900 100:$1.0700 500:$0.9410 1000:$0.7430
IRF7450PBF	International Rectifier	2.5 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA	190	61:$0.5880 13:$0.8400 1:$1.6800
IRF7450PBF	International Rectifier		51
IRF7450PBF DISTI # 8268932P	Infineon Technologies AG	HEXFET N-CH MOSFET 2.5A 200V SOIC8, TU	3615	50:£0.3820
IRF7450PBF DISTI # IRF7450PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,2.5A,3W,SO8	190	1:$0.9039 3:$0.8199 10:$0.7058 95:$0.6245
IRF7450PBF	International Rectifier	RoHS: Compliant	Europe - 2280
IRF7450PBF DISTI # 1013459	Infineon Technologies AG	MOSFET, N, SO-8 RoHS: Compliant	80	1:$2.5900 10:$2.2000 100:$1.7000 500:$1.5000 1000:$1.1800 2500:$1.0500
IRF7450PBF DISTI # 1013459	Infineon Technologies AG	MOSFET, N, SO-8 RoHS: Compliant	90	5:£0.7140 25:£0.5910 100:£0.5300 250:£0.4890 500:£0.4570
IRF7450PBF DISTI # XSFP00000147592	Infineon Technologies AG	PowerField-EffectTransistor,2.5AI(D),200V,0.17ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,MS-012AA RoHS: Compliant	330	190:$1.6000 330:$1.4500

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Disponibilidad

Valores:: Available
En orden:: 1986
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Empezar con

IRF7450 5
IRF745 50
IRF74 375
IRF7 1262
IRF 8615

IRF7450PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes