IPB065N15N3GATMA1

Mfr. #:: IPB065N15N3GATMA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPB065N15N3GATMA1 Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: TO-263-7

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 150 V

Id - Corriente de drenaje continua:: 130 A

Rds On - Resistencia de la fuente de drenaje:: 5.2 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 2 V

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 93 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 175 C

Pd - Disipación de energía:: 300 W

Configuración:: Único

Modo de canal:: Mejora

Nombre comercial:: OptiMOS

Embalaje:: Carrete

Altura:: 4.4 mm

Longitud:: 10 mm

Serie:: OptiMOS 3

Tipo de transistor:: 1 N-Channel

Ancho:: 9.25 mm

Marca:: Infineon Technologies

Transconductancia directa - Mín .:: 70 S

Otoño:: 14 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 35 ns

Cantidad de paquete de fábrica:: 1000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 46 ns

Tiempo típico de retardo de encendido:: 25 ns

Parte # Alias:: G IPB065N15N3 IPB65N15N3GXT SP000521724

Unidad de peso:: 0.056438 oz

Tags: IPB065N15N3G, IPB065N15N3, IPB065N15, IPB065N1, IPB065, IPB06, IPB0, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

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IPB065N15N3GATMA1 Descripción

***ure Electronics: Single N-Channel 150 V 6.5 mOhm 70 nC OptiMOS Power Mosfet - D2PAK-7

***ow.cn: Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 150V, 130A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Source Voltage Vds:150V; On Resistance

***roFlash: Power Field-Effect Transistor, 130A I(D), 150V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

***ineon SCT: The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-7, RoHS

***nell: MOSFET, N CH, 150V, 130A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: Single N-Channel 150 V 7.2 mOhm 70 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 150V 100A Automotive 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS

***ment14 APAC: MOSFET, N CH, 100A, 150V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: Single N-Channel 150 V 11.8 mOhm 110 nC HEXFET® Power Mosfet - D2PAK-7

*** Source Electronics: Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK T/R / MOSFET N-CH 150V 105A D2PAK-7

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS

***nell: MOSFET, N-CH, 150V, 105A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 105A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

*** Stop Electro: Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive

***emi: N-Channel PowerTrench® MOSFET 150V, 130A, 7.5mΩ

***Yang: Trans MOSFET N-CH 150V 130A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (

***ment14 APAC: MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Source Voltage Vds:150V; On Resistance

***roFlash: Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.00625ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ure Electronics: N-Channel 150 V 92 A 11 mOhm N-Channel Power Trench Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 150V, 92A, 11mΩ

***ment14 APAC: MOSFET, N-CH, 150V, 92A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:92A; Source Voltage Vds:150V; On Resistance

***r Electronics: Power Field-Effect Transistor, 92A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 3.3 k Ω 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 3.3K OHM 1% 1/10W 0402

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 150V, 92A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 92A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.00925ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 234W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***emi: N-Channel PowerTrench® MOSFET 150V, 105A, 8.2mΩ

*** Stop Electro: Power Field-Effect Transistor, 105A I(D), 150V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 28.7kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 28.7K OHM 1% 1/10W 0402

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ark: MOSFET Transistor, N Channel, 98 A, 120 V, 0.0066 ohm, 10 V, 3 V

***ure Electronics: Single N-Channel 120 V 7.7 mOhm 88 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 120V, 98A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Source Voltage Vds:120V; On Resistance

***roFlash: Power Field-Effect Transistor, 13.4A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ineon SCT: The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications, PG-TDSON-8, RoHS

***nell: MOSFET, N CH, 120V, 98A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 98A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.0066ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPB065N15N3GATMA1 DISTI # V72:2272_06378101	Infineon Technologies AG	Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	95	25:$5.1080 10:$5.3540 1:$6.5065
IPB065N15N3GATMA1 DISTI # V36:1790_06378101	Infineon Technologies AG	Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$2.9170 500000:$2.9200 100000:$3.1290 10000:$3.4900 1000:$3.5500
IPB065N15N3GATMA1 DISTI # IPB065N15N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 130A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9595In Stock	500:$4.1980 100:$4.8210 10:$5.8230 1:$6.4500
IPB065N15N3GATMA1 DISTI # IPB065N15N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 130A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9595In Stock	500:$4.1980 100:$4.8210 10:$5.8230 1:$6.4500
IPB065N15N3GATMA1 DISTI # IPB065N15N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 130A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	9000In Stock	2000:$3.4184 1000:$3.5499
IPB065N15N3GATMA1 DISTI # 32415795	Infineon Technologies AG	Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$5.1406
IPB065N15N3GATMA1 DISTI # 33099125	Infineon Technologies AG	Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	95	2:$6.5065
IPB065N15N3GXT DISTI # IPB065N15N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB065N15N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$3.0900 6000:$3.1900 4000:$3.2900 2000:$3.3900 1000:$3.5900
IPB065N15N3 G DISTI # IPB065N15N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 130A 7-Pin TO-263 T/R - Bulk (Alt: IPB065N15N3GATMA1) RoHS: Compliant Min Qty: 112 Container: Bulk	Americas - 0	560:$2.7900 1120:$2.7900 336:$2.8900 224:$3.0900 112:$3.1900
IPB065N15N3GATMA1 DISTI # 85X6014	Infineon Technologies AG	MOSFET Transistor, N Channel, 130 A, 150 V, 0.0052 ohm, 10 V, 3 V RoHS Compliant: Yes	0	500:$3.9200 250:$4.2900 100:$4.4900 50:$4.8400 25:$5.1800 10:$5.4300 1:$6.0100
IPB065N15N3GATMA1 DISTI # 726-IPB065N15N3GATMA	Infineon Technologies AG	MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 RoHS: Compliant	1765	1:$5.9500 10:$5.3800 25:$5.1300 100:$4.4500 250:$4.2500 500:$3.8800 1000:$3.3800 2000:$3.2500
IPB065N15N3 G DISTI # 726-IPB065N15N3G	Infineon Technologies AG	MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 RoHS: Compliant	299	1:$5.9500 10:$5.3800 25:$5.1300 100:$4.4500 250:$4.2500 500:$3.8800 1000:$3.3800 2000:$3.2500
IPB065N15N3GATMA1	Infineon Technologies AG	Single N-Channel 150 V 6.5 mOhm 70 nC OptiMOS Power Mosfet - D2PAK-7 RoHS: Not Compliant	1000Reel	1000:$3.1300
IPB065N15N3GATMA1	Infineon Technologies AG	RoHS: Not Compliant	55	1000:$2.9500 500:$3.1000 100:$3.2300 25:$3.3700 1:$3.6300
IPB065N15N3GATMA1 DISTI # 9064283P	Infineon Technologies AG	MOSFET N-CH 150V 130A OPTIMOS TO263, RL	2768	200:£3.0650 100:£3.2500 40:£3.4700 10:£3.9700
IPB065N15N3GATMA1 DISTI # 2443380RL	Infineon Technologies AG	MOSFET, N CH, 150V, 130A, TO-263-7 RoHS: Compliant	0	1000:$5.0900 500:$5.8500 250:$6.4000 100:$6.7100 25:$7.7300 10:$8.1100 1:$8.9700
IPB065N15N3GATMA1 DISTI # 2443380	Infineon Technologies AG	MOSFET, N CH, 150V, 130A, TO-263-7 RoHS: Compliant	733	1000:$5.0900 500:$5.8500 250:$6.4000 100:$6.7100 25:$7.7300 10:$8.1100 1:$8.9700
IPB065N15N3GATMA1 DISTI # 2443380	Infineon Technologies AG	MOSFET, N CH, 150V, 130A, TO-263-7	715	500:£3.0200 250:£3.3000 100:£3.4700 10:£3.9900 1:£5.1200
IPB065N15N3GATMA1 DISTI # XSKDRABV0052066	Infineon Technologies AG	RoHS: Compliant	3000 in Stock0 on Order	3000:$4.3000 1000:$4.6100

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Disponibilidad

Valores:: Available
En orden:: 1984
Ingrese la cantidad:

El precio actual de IPB065N15N3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~5,95 US$~~; ~~5,95 US$~~

10: ~~5,38 US$~~; ~~53,80 US$~~

25: ~~5,13 US$~~; ~~128,25 US$~~

100: ~~4,45 US$~~; ~~445,00 US$~~

250: ~~4,25 US$~~; ~~1 062,50 US$~~

500: ~~3,88 US$~~; ~~1 940,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPB065N15N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes