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IPN80R750P7ATMA1

IPN80R750P7ATMA1
Mfr. #:
IPN80R750P7ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET LOW POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPN80R750P7ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPN80R750P7ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-223-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
7 A
Rds On - Resistencia de la fuente de drenaje:
640 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
17 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
7.2 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
8 ns
Parte # Alias:
IPN80R750P7 SP001665002
Tags
IPN80, IPN8, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS P7 Power Transistor MOSFET 800V 7A 3-Pin PG-SOT223 T/R
***ical
Trans MOSFET N-CH 800V 7A 3-Pin(2+Tab) SOT-223
***ark
MOSFET, N-CH, 800V, 150DEG C, 7.2W ROHS COMPLIANT: YES
***ment14 APAC
场效应管, MOSFET, N沟道, 800V, 150度 C, 7.2W;
***nell
MOSFET, CAN-N, 800V, 150°C, 7.2W;
***ronik
N-CH 800V 7A 750mOhm SOT-223
***ure Electronics
800v, 7a, 0.75 Ohms, SOT223
***i-Key
COOLMOS P7 800V SOT-223
***ineon
Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Parte # Mfg. Descripción Valores Precio
IPN80R750P7ATMA1
DISTI # V72:2272_19084648		Infineon Technologies AG800V CoolMOS P7 Power Transistor2550
  • 1000:$0.5721
  • 500:$0.7090
  • 250:$0.7925
  • 100:$0.7936
  • 25:$0.9947
  • 10:$0.9968
  • 1:$1.1469
IPN80R750P7ATMA1
DISTI # IPN80R750P7ATMA1CT-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3259In Stock
  • 1000:$0.7433
  • 500:$0.9211
  • 100:$1.1655
  • 10:$1.4550
  • 1:$1.6400
IPN80R750P7ATMA1
DISTI # IPN80R750P7ATMA1DKR-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3259In Stock
  • 1000:$0.7433
  • 500:$0.9211
  • 100:$1.1655
  • 10:$1.4550
  • 1:$1.6400
IPN80R750P7ATMA1
DISTI # IPN80R750P7ATMA1TR-ND		Infineon Technologies AGCOOLMOS P7 800V SOT-223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.6785
IPN80R750P7ATMA1
DISTI # 29709265		Infineon Technologies AG800V CoolMOS P7 Power Transistor3000
  • 30000:$0.4780
  • 18000:$0.4866
  • 12000:$0.5039
  • 6000:$0.5221
  • 3000:$0.5423
IPN80R750P7ATMA1
DISTI # 28955720		Infineon Technologies AG800V CoolMOS P7 Power Transistor2550
  • 1000:$0.6150
  • 500:$0.7622
  • 250:$0.8519
  • 100:$0.8531
  • 25:$1.0693
  • 13:$1.0716
IPN80R750P7ATMA1
DISTI # IPN80R750P7ATMA1		Infineon Technologies AGCoolMOS P7 Power Transistor MOSFET 800V 7A 3-Pin PG-SOT223 T/R - Tape and Reel (Alt: IPN80R750P7ATMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
  • 3000:$0.5649
  • 6000:$0.5439
  • 12000:$0.5249
  • 18000:$0.5069
  • 30000:$0.4979
IPN80R750P7ATMA1
DISTI # SP001665002		Infineon Technologies AGCoolMOS P7 Power Transistor MOSFET 800V 7A 3-Pin PG-SOT223 T/R (Alt: SP001665002)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.8649
  • 6000:€0.7259
  • 12000:€0.6059
  • 18000:€0.5279
  • 30000:€0.4939
IPN80R750P7ATMA1
DISTI # 726-IPN80R750P7ATMA1		Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant		3273
  • 1:$1.2800
  • 10:$1.0900
  • 100:$0.8440
  • 500:$0.7460
  • 1000:$0.5890
IPN80R750P7ATMA1
DISTI # IPN80R750P7		Infineon Technologies AGTransistor: N-MOSFET,unipolar,800V,4.6A,7.2W,PG-SOT2232
  • 1:$0.9500
  • 5:$0.8400
  • 20:$0.7500
  • 100:$0.6800
  • 500:$0.6300
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Mfr.#: BCW66FVL

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DTD143ECHZGT116

Mfr.#: DTD143ECHZGT116

OMO.#: OMO-DTD143ECHZGT116-ROHM-SEMI

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IPN80R600P7ATMA1

Mfr.#: IPN80R600P7ATMA1

OMO.#: OMO-IPN80R600P7ATMA1-INFINEON-TECHNOLOGIES

 COOLMOS P7 800V SOT-223
Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de IPN80R750P7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,28 US$
1,28 US$
10
1,09 US$
10,90 US$
100
0,84 US$
84,40 US$
500
0,75 US$
373,00 US$
1000
0,59 US$
589,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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