SPU01N60C3

SPU01N60C3
Mfr. #:
SPU01N60C3
Fabricante:
Rochester Electronics, LLC
Descripción:
Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SPU01N60C3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Serie
CoolMOS C3
embalaje
Tubo
Alias ​​de parte
SP000012110 SPU01N60C3BKMA1 SPU01N60C3XK
Unidad de peso
0.139332 oz
Estilo de montaje
A través del orificio
Nombre comercial
CoolMOS
Paquete-Estuche
IPAK-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
11 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
30 ns
Hora de levantarse
25 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
800 mA
Vds-Drain-Source-Breakdown-Voltage
600 V
Resistencia a la fuente de desagüe de Rds
6 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
55 ns
Tiempo de retardo de encendido típico
30 ns
Modo de canal
Mejora
Tags
SPU01N60C, SPU01N6, SPU01N, SPU01, SPU0, SPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
SPU01N60C3BKMA1
DISTI # SPU01N60C3BKMA1-ND
Infineon Technologies AGMOSFET N-CH 650V 0.8A TO-251
RoHS: Compliant
Min Qty: 1
Container: Tube
714In Stock
  • 500:$0.6690
  • 100:$0.8627
  • 10:$1.0920
  • 1:$1.2300
SPU01N60C3BKMA1
DISTI # 34AC1977
Infineon Technologies AGMOSFET, N-CH, 600V, 0.8A, TO-251-3,Transistor Polarity:N Channel,Continuous Drain Current Id:800mA,Drain Source Voltage Vds:600V,On Resistance Rds(on):5.6ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes1518
  • 1:$0.9670
  • 10:$0.8290
  • 100:$0.6360
  • 500:$0.5630
  • 1000:$0.4900
  • 2500:$0.3980
  • 10000:$0.3850
SPU01N60C3Infineon Technologies AGPower Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant
151435
  • 1000:$0.4300
  • 500:$0.4500
  • 100:$0.4700
  • 25:$0.4900
  • 1:$0.5300
SPU01N60C3BKMA1Infineon Technologies AG 
RoHS: Not Compliant
1875
  • 1000:$0.4900
  • 500:$0.5100
  • 100:$0.5300
  • 25:$0.5600
  • 1:$0.6000
SPU01N60C3
DISTI # 726-SPU01N60C3
Infineon Technologies AGMOSFET N-Ch 600V 800mA IPAK-3 CoolMOS C3
RoHS: Compliant
404
  • 1:$1.0600
  • 10:$0.8970
  • 100:$0.6890
  • 500:$0.6090
  • 1000:$0.4810
SPU01N60C3BKMA1
DISTI # N/A
Infineon Technologies AGMOSFET LOW POWER_LEGACY0
    SPU01N60C3Infineon Technologies AGINSTOCK983
      SPU01N60C3Infineon Technologies AG600V,0.8A,N channel Power MOSFET800
      • 1:$0.6900
      • 100:$0.5700
      • 500:$0.5100
      • 1000:$0.4900
      SPU01N60C3BKMA1
      DISTI # 2781200
      Infineon Technologies AGMOSFET, N-CH, 600V, 0.8A, TO-251-3
      RoHS: Compliant
      1518
      • 5:$1.5400
      • 25:$1.3400
      • 100:$1.1000
      • 250:$0.9250
      • 500:$0.8000
      • 1000:$0.7570
      • 5000:$0.7180
      SPU01N60C3BKMA1
      DISTI # 2781200
      Infineon Technologies AGMOSFET, N-CH, 600V, 0.8A, TO-251-3
      RoHS: Compliant
      1528
      • 5:£1.0200
      • 25:£0.9190
      • 100:£0.7260
      • 250:£0.6450
      • 500:£0.5630
      Imagen Parte # Descripción
      SPU01N60C3BKMA1

      Mfr.#: SPU01N60C3BKMA1

      OMO.#: OMO-SPU01N60C3BKMA1

      MOSFET LOW POWER_LEGACY
      SPU01L-05

      Mfr.#: SPU01L-05

      OMO.#: OMO-SPU01L-05-MEAN-WELL

      DC DC CONVERTER 5V 1W
      SPU01L-05B3

      Mfr.#: SPU01L-05B3

      OMO.#: OMO-SPU01L-05B3-1190

      Nuevo y original
      SPU01N50

      Mfr.#: SPU01N50

      OMO.#: OMO-SPU01N50-1190

      Nuevo y original
      SPU01N50M2

      Mfr.#: SPU01N50M2

      OMO.#: OMO-SPU01N50M2-1190

      Nuevo y original
      SPU01N60

      Mfr.#: SPU01N60

      OMO.#: OMO-SPU01N60-1190

      Nuevo y original
      SPU01N60C3

      Mfr.#: SPU01N60C3

      OMO.#: OMO-SPU01N60C3-1190

      Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      SPU01N60C3,01N60C3

      Mfr.#: SPU01N60C3,01N60C3

      OMO.#: OMO-SPU01N60C3-01N60C3-1190

      Nuevo y original
      SPU01N60C3BKMA1

      Mfr.#: SPU01N60C3BKMA1

      OMO.#: OMO-SPU01N60C3BKMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 650V 0.8A TO-251
      SPU01N60S5

      Mfr.#: SPU01N60S5

      OMO.#: OMO-SPU01N60S5-1190

      Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de SPU01N60C3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,57 US$
      0,57 US$
      10
      0,54 US$
      5,42 US$
      100
      0,51 US$
      51,30 US$
      500
      0,48 US$
      242,25 US$
      1000
      0,46 US$
      456,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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