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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SPU01N60C3BKMA1 DISTI # V99:2348_06384664 | Infineon Technologies AG | Trans MOSFET N-CH 600V 0.8A 3-Pin(3+Tab) TO-251 Tube RoHS: Compliant | 0 |
|
| SPU01N60C3BKMA1 DISTI # SPU01N60C3BKMA1-ND | Infineon Technologies AG | MOSFET N-CH 650V 0.8A TO-251 RoHS: Compliant Min Qty: 1500 Container: Tube | Limited Supply - Call | |
| SPU01N60C3BKMA1 DISTI # SPU01N60C3BKMA1 | Infineon Technologies AG | Trans MOSFET N-CH 600V 0.8A 3-Pin TO-251 Tube - Bulk (Alt: SPU01N60C3BKMA1) Min Qty: 758 Container: Bulk | Americas - 0 |
|
| SPU01N60C3BKMA1 DISTI # N/A | Infineon Technologies AG | MOSFET LOW POWER_LEGACY | 0 | |
| SPU01N60C3 DISTI # 726-SPU01N60C3 | Infineon Technologies AG | MOSFET N-Ch 600V 800mA IPAK-3 CoolMOS C3 RoHS: Compliant | 0 | |
| SPU01N60C3BKMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 1875 |
|
| SPU01N60C3BKMA1 DISTI # 2781200 | Infineon Technologies AG | MOSFET, N-CH, 600V, 0.8A, TO-251-3 | 1523 |
|
| SPU01N60C3BKMA1 DISTI # 2781200 | Infineon Technologies AG | MOSFET, N-CH, 600V, 0.8A, TO-251-3 RoHS: Compliant | 1513 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: SPU01N60C3BKMA1 OMO.#: OMO-SPU01N60C3BKMA1 |
MOSFET LOW POWER_LEGACY |
|
Mfr.#: SPU01N60 OMO.#: OMO-SPU01N60-1190 |
Nuevo y original |
|
|
Mfr.#: SPU01N60C3 OMO.#: OMO-SPU01N60C3-1190 |
Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: SPU01N60C3,01N60C3 OMO.#: OMO-SPU01N60C3-01N60C3-1190 |
Nuevo y original |
|
Mfr.#: SPU01N60C3BKMA1 |
MOSFET N-CH 650V 0.8A TO-251 |
|
|
Mfr.#: SPU01N60S5 OMO.#: OMO-SPU01N60S5-1190 |
Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |