IXFH36N60P

IXFH36N60P
Mfr. #:
IXFH36N60P
Fabricante:
Littelfuse
Descripción:
Darlington Transistors MOSFET 600V 36A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH36N60P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFH36N60P más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
FET - Single
Serie
IXFH36N60
embalaje
Tubo
Unidad de peso
0.229281 oz
Estilo de montaje
A través del orificio
Nombre comercial
HyperFET
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
650 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
22 ns
Hora de levantarse
25 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
36 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Resistencia a la fuente de desagüe de Rds
190 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
80 ns
Tiempo de retardo de encendido típico
30 ns
Transconductancia directa-Mín.
39 S
Modo de canal
Mejora
Tags
IXFH36, IXFH3, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 36 A 190 mO PolarHT hiPerFET Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-247AD
***ukat
N-Ch 600V 36A 650W 0,19R TO247AD
***ark
Mosfet, N, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:36A; On Resistance Rds(On):0.19Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5Vrohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFH36N60P
DISTI # IXFH36N60P-ND
IXYS CorporationMOSFET N-CH 600V 36A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
93In Stock
  • 510:$6.1551
  • 120:$7.3463
  • 30:$8.1407
  • 1:$9.9300
IXFH36N60P
DISTI # 58M7600
IXYS CorporationMOSFET, N, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.19ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:650W,MSL:-RoHS Compliant: Yes40
  • 1:$10.3700
  • 10:$9.3400
  • 25:$7.7700
  • 50:$7.2200
  • 100:$7.0600
  • 250:$6.4500
  • 500:$5.8800
IXFH36N60P
DISTI # 747-IXFH36N60P
IXYS CorporationMOSFET 600V 36A
RoHS: Compliant
695
  • 1:$10.3700
  • 10:$9.3400
  • 25:$7.7700
  • 50:$7.2200
  • 100:$7.0600
  • 250:$6.4500
  • 500:$5.8800
  • 1000:$5.6100
IXFH36N60PIXYS Corporation36 A, 600 V, 0.19 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AD5
  • 4:$5.4000
  • 2:$7.2000
  • 1:$10.8000
IXFH36N60P
DISTI # 1427299
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
40
  • 1:$15.8300
  • 30:$12.9800
  • 120:$11.7100
  • 510:$9.8200
IXFH36N60P
DISTI # 1427299
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
40
  • 1:£8.7400
  • 5:£8.1500
  • 10:£6.1000
  • 50:£5.6800
  • 100:£5.5500
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OMO.#: OMO-IXFH35N30Q-IXYS-CORPORATION

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OMO.#: OMO-IXFH32N48-IXYS-CORPORATION

MOSFET N-CH 480V 32A TO247AD
IXFH30N50Q3

Mfr.#: IXFH30N50Q3

OMO.#: OMO-IXFH30N50Q3-IXYS-CORPORATION

Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
IXFH36N60P

Mfr.#: IXFH36N60P

OMO.#: OMO-IXFH36N60P-IXYS-CORPORATION

Darlington Transistors MOSFET 600V 36A
IXFH30N50P

Mfr.#: IXFH30N50P

OMO.#: OMO-IXFH30N50P-IXYS-CORPORATION

Darlington Transistors MOSFET 500V 30A
IXFH32N50

Mfr.#: IXFH32N50

OMO.#: OMO-IXFH32N50-IXYS-CORPORATION

MOSFET 500V 32A
IXFH32N50Q

Mfr.#: IXFH32N50Q

OMO.#: OMO-IXFH32N50Q-IXYS-CORPORATION

MOSFET 32 Amps 500V 0.15 Rds
IXFH30N50

Mfr.#: IXFH30N50

OMO.#: OMO-IXFH30N50-IXYS-CORPORATION

MOSFET 30 Amps 500V 0.16 Rds
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IXFH36N60P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,10 US$
8,10 US$
10
7,70 US$
76,95 US$
100
7,29 US$
729,00 US$
500
6,88 US$
3 442,50 US$
1000
6,48 US$
6 480,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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