FQP2N80

FQP2N80
Mfr. #:
FQP2N80
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 800V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQP2N80 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FQP2N80 Datasheet
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
2.4 A
Rds On - Resistencia de la fuente de drenaje:
6.3 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
85 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
QFET
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FQP2N80
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
2.65 S
Otoño:
28 ns
Tipo de producto:
MOSFET
Hora de levantarse:
30 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25 ns
Tiempo típico de retardo de encendido:
12 ns
Parte # Alias:
FQP2N80_NL
Unidad de peso:
0.063493 oz
Tags
FQP2N, FQP2, FQP
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,n-Channel,800V V(Br)Dss,2.4A I(D),to-220 Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail
***emi
N-Channel QFET® MOSFET 800V, 2.4A, 6.3Ω
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):6.3ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:85W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Alternate Case Style:SOT-78B; On State Resistance Max:6.3ohm; Pulse Current Idm:9.6A; Voltage Vgs th Max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FQP2N80
DISTI # V36:1790_06301280
ON SemiconductorQF 800V 6.3OHM TO2200
  • 1000000:$0.4459
  • 500000:$0.4463
  • 100000:$0.4871
  • 10000:$0.5650
  • 1000:$0.5783
FQP2N80
DISTI # FQP2N80-ND
ON SemiconductorMOSFET N-CH 800V 2.4A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$0.5783
FQP2N80
DISTI # FQP2N80
ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.4239
  • 500:€0.4329
  • 100:€0.4469
  • 50:€0.4579
  • 25:€0.5429
  • 10:€0.6539
  • 1:€0.8409
FQP2N80
DISTI # FQP2N80
ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 532
Container: Bulk
Americas - 0
  • 5320:$0.5799
  • 2660:$0.5939
  • 1596:$0.6019
  • 1064:$0.6099
  • 532:$0.6139
FQP2N80
DISTI # FQP2N80
ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$0.4539
  • 6000:$0.4649
  • 4000:$0.4709
  • 2000:$0.4769
  • 1000:$0.4799
FQP2N80
DISTI # 512-FQP2N80
ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant
988
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7900
  • 500:$0.6980
  • 1000:$0.5510
  • 2000:$0.4890
  • 10000:$0.4710
FQP2N80ON SemiconductorPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
3000
  • 1000:$0.5400
  • 500:$0.5700
  • 100:$0.5900
  • 25:$0.6200
  • 1:$0.6600
FQP2N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
3621
  • 1000:$0.5400
  • 500:$0.5700
  • 100:$0.5900
  • 25:$0.6200
  • 1:$0.6600
FQP2N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
1000
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    TRANS PNP DARL 100V 8A TO-220AB
    Disponibilidad
    Valores:
    988
    En orden:
    2971
    Ingrese la cantidad:
    El precio actual de FQP2N80 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,20 US$
    1,20 US$
    10
    1,02 US$
    10,20 US$
    100
    0,79 US$
    79,00 US$
    500
    0,70 US$
    349,00 US$
    1000
    0,55 US$
    551,00 US$
    2000
    0,49 US$
    978,00 US$
    10000
    0,47 US$
    4 710,00 US$
    25000
    0,46 US$
    11 400,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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