 | |  | |
| PartNumber | FQP2N40-F080 | FQP2N40 | FQP2N30 |
| Description | MOSFET N-CH 400V 1.8A 5.8OHM | MOSFET 400V N-Channel QFET | MOSFET N-CH 300V 2.1A TO-220 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Packaging | Tube | Tube | - |
| Height | 16.3 mm | 16.3 mm | - |
| Length | 10.67 mm | 10.67 mm | - |
| Series | FQP2N40 | QFET | - |
| Width | 4.7 mm | 4.7 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | FQP2N40_F080 | - | - |
| Unit Weight | 0.063493 oz | 0.050717 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 400 V | - |
| Id Continuous Drain Current | - | 1.8 A | - |
| Rds On Drain Source Resistance | - | 5.8 Ohms | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 40 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Type | - | MOSFET | - |
| Forward Transconductance Min | - | 1.1 S | - |
| Fall Time | - | 25 ns | - |
| Rise Time | - | 30 ns | - |
| Typical Turn Off Delay Time | - | 7 ns | - |
| Typical Turn On Delay Time | - | 7 ns | - |