SIHG23N60E-GE3

SIHG23N60E-GE3
Mfr. #:
SIHG23N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs TO-247AC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHG23N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG23N60E-GE3 DatasheetSIHG23N60E-GE3 Datasheet (P4-P6)SIHG23N60E-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIHG23N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247AC-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
23 A
Rds On - Resistencia de la fuente de drenaje:
158 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
63 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
227 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
34 ns
Tipo de producto:
MOSFET
Hora de levantarse:
38 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
66 ns
Tiempo típico de retardo de encendido:
22 ns
Unidad de peso:
1.340411 oz
Tags
SIHG2, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 23A 3-Pin TO-247AC
***i-Key
MOSFET N-CH 600V 23A TO247AC
***ark
N-Channel 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHG23N60E-GE3
DISTI # SIHG23N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 23A TO247AC
Min Qty: 1
Container: Tube
323In Stock
  • 2500:$2.2317
  • 1000:$2.3492
  • 500:$2.7855
  • 100:$3.2721
  • 10:$3.9940
  • 1:$4.4500
SIHG23N60E-GE3
DISTI # SIHG23N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 23A 3-Pin TO-247AC (Alt: SIHG23N60E-GE3)
Min Qty: 1
Europe - 0
  • 100:€1.9344
  • 50:€2.0584
  • 25:€2.2072
  • 10:€2.3560
  • 1:€2.4800
  • 500:€2.4800
  • 1000:€2.4800
SIHG23N60E-GE3
DISTI # SIHG23N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 23A 3-Pin TO-247AC - Bulk (Alt: SIHG23N60E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Bulk
Americas - 0
  • 5000:$2.1513
  • 3000:$2.2108
  • 2000:$2.2737
  • 1000:$2.3701
  • 500:$2.4425
SIHG23N60E-GE3
DISTI # 78-SIHG23N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant
512
  • 1:$4.4500
  • 10:$3.7700
  • 100:$3.2700
  • 500:$2.7800
  • 2500:$2.2300
SIHG23N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant
Americas -
    Imagen Parte # Descripción
    TBD62084APG

    Mfr.#: TBD62084APG

    OMO.#: OMO-TBD62084APG

    Gate Drivers DMOS Transistor Array 8-CH, 50V/0.5A
    IR2156STRPBF

    Mfr.#: IR2156STRPBF

    OMO.#: OMO-IR2156STRPBF

    Gate Drivers Ballast Cntrl Prog Preht Tm & Run Freq
    SN74LS07DR

    Mfr.#: SN74LS07DR

    OMO.#: OMO-SN74LS07DR

    Buffers & Line Drivers Hex W/ OC HV Out
    FQP22N30

    Mfr.#: FQP22N30

    OMO.#: OMO-FQP22N30

    MOSFET 300V N-Channel QFET
    ESR10EZPF3601

    Mfr.#: ESR10EZPF3601

    OMO.#: OMO-ESR10EZPF3601

    Thick Film Resistors - SMD 0805 3K6ohm 1% Anti Surge AEC-Q200
    J0011D21BNL

    Mfr.#: J0011D21BNL

    OMO.#: OMO-J0011D21BNL

    Modular Connectors / Ethernet Connectors LEADED SINGLE PORT
    IR2156STRPBF

    Mfr.#: IR2156STRPBF

    OMO.#: OMO-IR2156STRPBF-INFINEON-TECHNOLOGIES

    Gate Drivers Ballast Cntrl Prog Preht Tm & Run Freq
    T356A105M035AS

    Mfr.#: T356A105M035AS

    OMO.#: OMO-T356A105M035AS-428

    Cap Tant Solid 1uF 35V 20% (4.5 X 8.6mm) Radial 5.08mm 125C Bulk
    J0011D21BNL

    Mfr.#: J0011D21BNL

    OMO.#: OMO-J0011D21BNL-PULSE-ELECTRONICS

    Modular Connectors / Ethernet Connectors LEADED SINGLE PORT
    FQP22N30

    Mfr.#: FQP22N30

    OMO.#: OMO-FQP22N30-ON-SEMICONDUCTOR

    MOSFET N-CH 300V 21A TO-220
    Disponibilidad
    Valores:
    531
    En orden:
    2514
    Ingrese la cantidad:
    El precio actual de SIHG23N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,17 US$
    5,17 US$
    10
    4,61 US$
    46,10 US$
    100
    3,78 US$
    378,00 US$
    250
    3,51 US$
    877,50 US$
    500
    3,06 US$
    1 530,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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