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APT20M38BVRG

APT20M38BVRG
Mfr. #:
APT20M38BVRG
Fabricante:
Microchip / Microsemi
Descripción:
MOSFET FG, MOSFET, 200V, TO-247, RoHS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT20M38BVRG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT20M38BVRG DatasheetAPT20M38BVRG Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
67 A
Rds On - Resistencia de la fuente de drenaje:
38 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
225 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
370 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Tipo de transistor:
1 N-Channel
Marca:
Microchip / Microsemi
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
21 ns
Cantidad de paquete de fábrica:
1
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
48 ns
Tiempo típico de retardo de encendido:
14 ns
Unidad de peso:
0.211644 oz
Tags
APT20M38B, APT20M38, APT20M3, APT20M, APT20, APT2, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
APT20M38 Series 200 V 0.038 Ohm 67 A N-Ch Enhancement Mode Power MOSFETs-TO-247
***ical
Trans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247 Tube
***rochip
MOSFET MOS5 200 V 38 mOhm TO-247
*** Stop Electro
Power Field-Effect Transistor, 67A I(D), 200V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 250 V, 0.033 Ohm typ., 52 A, Zener protected SuperMESH Power MOSFET in TO-247 package
***ure Electronics
N-Channel 250 V 45 mO 160 nC Flange Mount SuperMESH™ MOSFET - TO-247
***ark
MOSFET, N CHANNEL, 250V, 52A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 52A I(D), 250V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in TO-247 package
***ure Electronics
N-Channel 200 V 34 mOhm Flange Mount STripFET Power Mosfet - TO-247
***ark
MOSFET, N CHANNEL, 200V, 75A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:37A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 75A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 76A, 36mΩ, TO-247
***ure Electronics
Single N-Channel 600 V 36 mOhm 285 nC 543 W Silicon Flange Mount Mosfet TO-247-3
***r Electronics
Power Field-Effect Transistor, 76A I(D), 600V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET,N CH,600V,76A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package
*** Source Electronics
Trans MOSFET N-CH Si 650V 84A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 84A TO-247
***nell
MOSFET, N CH, 650V, 84A, 0R024, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs
***r Electronics
Power Field-Effect Transistor, 84A I(D), 650V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPREMOS®, FRFET®, 600 V, 72.8 A, 38 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 72.8A I(D), 600V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
MOSFET, N CH, 600V, 72.8A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:72.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0287ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***ure Electronics
IPW60R041P6 Series 600 V 77.5 A CoolMOS™ P6 Power Transistor - TO-247-3
***ark
MOSFET, N-CH, 600V, 77.5A, 150DEG C/481W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:77.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***nell
MOSFET, N-CH, 600V, 77.5A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 77.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 481W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P6 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Parte # Mfg. Descripción Valores Precio
APT20M38BVRG
DISTI # V36:1790_09096220		Microsemi CorporationTrans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247
RoHS: Compliant		463
  • 1000:$7.7890
  • 500:$8.6910
  • 250:$9.3770
  • 100:$10.3650
  • 50:$10.8520
  • 30:$11.5820
APT20M38BVRG
DISTI # APT20M38BVRG-ND		Microsemi CorporationMOSFET N-CH 200V 67A TO-247
RoHS: Compliant
Min Qty: 40
Container: Tube		Temporarily Out of Stock
  • 40:$11.8692
APT20M38BVRG
DISTI # 32884824		Microsemi CorporationTrans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247
RoHS: Compliant		463
  • 30:$11.5820
APT20M38BVRG
DISTI # APT20M38BVRG		Microchip Technology IncTrans MOSFET N-CH 200V 67A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT20M38BVRG)
RoHS: Compliant
Min Qty: 40
Container: Tube		Americas - 0
  • 400:$7.8900
  • 200:$8.0900
  • 120:$8.2900
  • 80:$8.5900
  • 40:$8.8900
APT20M38BVRG
DISTI # 494-APT20M38BVRG		Microchip Technology IncMOSFET Power MOSFET - MOS5
RoHS: Compliant		0
  • 1:$13.8400
  • 10:$12.5800
  • 25:$11.6300
  • 50:$11.0000
  • 100:$10.6100
  • 250:$9.6900
  • 500:$9.0700
APT20M38BVRG
DISTI # APT20M38BVRG		Microsemi CorporationPOWER MOSFET TRANSISTOR
RoHS: Compliant		0
  • 40:$8.4200
  • 50:$8.2000
  • 100:$8.1000
Imagen Parte # Descripción
SI2304BDS-T1-GE3

Mfr.#: SI2304BDS-T1-GE3

OMO.#: OMO-SI2304BDS-T1-GE3

 MOSFET 30V 3.2A 1.08W 70mohm @ 10V
IRFP31N50LPBF

Mfr.#: IRFP31N50LPBF

OMO.#: OMO-IRFP31N50LPBF

 MOSFET N-CH 500V HEXFET MOSFET
SI2304BDS-T1-GE3

Mfr.#: SI2304BDS-T1-GE3

OMO.#: OMO-SI2304BDS-T1-GE3-VISHAY

 MOSFET N-CH 30V 2.6A SOT23-3
IRFP31N50LPBF

Mfr.#: IRFP31N50LPBF

OMO.#: OMO-IRFP31N50LPBF-VISHAY

 MOSFET N-CH 500V 31A TO-247AC
0451010.MRL

Mfr.#: 0451010.MRL

OMO.#: OMO-0451010-MRL-LITTELFUSE

 Surface Mount Fuses 125V 10A
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de APT20M38BVRG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
13,84 US$
13,84 US$
10
12,58 US$
125,80 US$
25
11,63 US$
290,75 US$
50
11,00 US$
550,00 US$
100
10,61 US$
1 061,00 US$
250
9,69 US$
2 422,50 US$
500
9,07 US$
4 535,00 US$
1000
8,09 US$
8 090,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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