SI4116DY-T1-GE3

SI4116DY-T1-GE3
Mfr. #:
SI4116DY-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 25V 18A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4116DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SI4116DY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI4466DY-T1-E3-S
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOIC-Narrow-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
15 ns
Hora de levantarse
11 ns
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
12.7 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Resistencia a la fuente de desagüe de Rds
8.6 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
50 ns
Tiempo de retardo de encendido típico
13 ns
Modo de canal
Mejora
Tags
SI4116DY-T, SI4116, SI411, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 25 V 0.0086 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R / MOSFET N-CH 25V 18A 8-SOIC
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0115ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.4V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 25V, 18A, 8SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Power Dissipation Pd:5W; Voltage Vgs Max:12V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4116DY-T1-GE3
DISTI # V72:2272_09216447
Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
RoHS: Compliant
1222
  • 1000:$0.5113
  • 500:$0.6052
  • 250:$0.6959
  • 100:$0.6979
  • 25:$0.8497
  • 10:$0.8532
  • 1:$0.9820
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8881In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8881In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
7500In Stock
  • 2500:$0.4911
SI4116DY-T1-GE3
DISTI # 29064963
Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
RoHS: Compliant
1222
  • 1000:$0.5113
  • 500:$0.6052
  • 250:$0.6959
  • 100:$0.6979
  • 25:$0.8497
  • 14:$0.8532
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R (Alt: SI4116DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.8429
  • 5000:€0.6039
  • 10000:€0.4899
  • 15000:€0.4329
  • 25000:€0.4149
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4116DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5429
  • 5000:$0.5269
  • 10000:$0.5049
  • 15000:$0.4909
  • 25000:$0.4779
SI4116DY-T1-GE3
DISTI # 16P3725
Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3725)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$0.8220
SI4116DY-T1-GE3
DISTI # 16P3725
Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 18A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:25V,On Resistance Rds(on):11.5mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V,Product Range:-, RoHS Compliant: Yes78
  • 1:$1.5100
  • 10:$1.2500
  • 25:$1.1500
  • 50:$1.0500
  • 100:$0.9550
  • 250:$0.8890
  • 500:$0.8220
SI4116DY-T1-GE3
DISTI # R1082526
Vishay DaleTRANSITOR,SI4804BDY
RoHS: Compliant
0
  • 5:$1.2800
  • 25:$1.0600
  • 100:$0.9700
  • 250:$0.8900
  • 500:$0.8300
SI4116DY-T1-GE3
DISTI # 781-SI4116DY-T1-GE3
Vishay IntertechnologiesMOSFET 25V Vds 12V Vgs SO-8
RoHS: Compliant
2103
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7960
  • 500:$0.6850
  • 1000:$0.6010
  • 2500:$0.6000
SI4116DY-T1-GE3
DISTI # 7103317P
Vishay IntertechnologiesMOSFET N-CHANNEL 25V 12.7A SOIC8, RL2600
  • 50:£0.6260
SI4116DY-T1-GE3
DISTI # 7103317
Vishay IntertechnologiesMOSFET N-CHANNEL 25V 12.7A SOIC8, PK725
  • 5:£0.9720
  • 50:£0.6260
SI4116DYT1GE3Vishay Intertechnologies 
RoHS: Compliant
Europe - 10000
    SI4116DY-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 12V Vgs SO-8
    RoHS: Compliant
    Americas -
    • 2500:$0.4820
    • 10000:$0.4410
    SI4116DY-T1-GE3
    DISTI # 1794777
    Vishay IntertechnologiesMOSFET, N CH, 25V, 18A, 8SOIC
    RoHS: Compliant
    0
    • 5:£1.0800
    • 25:£0.6960
    • 100:£0.6720
    • 250:£0.6470
    • 500:£0.6230
    SI4116DY-T1-GE3
    DISTI # C1S803601003591
    Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
    RoHS: Compliant
    1222
    • 250:$0.6961
    • 100:$0.6981
    • 25:$0.8498
    • 10:$0.8533
    Imagen Parte # Descripción
    SI4116DY-T1-GE3

    Mfr.#: SI4116DY-T1-GE3

    OMO.#: OMO-SI4116DY-T1-GE3

    MOSFET 25V Vds 12V Vgs SO-8
    SI4116DY-T1-E3

    Mfr.#: SI4116DY-T1-E3

    OMO.#: OMO-SI4116DY-T1-E3

    MOSFET 25V Vds 12V Vgs SO-8
    SI4116DY-T1-E3

    Mfr.#: SI4116DY-T1-E3

    OMO.#: OMO-SI4116DY-T1-E3-VISHAY

    IGBT Transistors MOSFET 25V 18A 5.0W 8.6mohm @ 10V
    SI4116DY

    Mfr.#: SI4116DY

    OMO.#: OMO-SI4116DY-1190

    Nuevo y original
    SI4116DY-T1

    Mfr.#: SI4116DY-T1

    OMO.#: OMO-SI4116DY-T1-1190

    Nuevo y original
    SI4116DY-T1-GE3

    Mfr.#: SI4116DY-T1-GE3

    OMO.#: OMO-SI4116DY-T1-GE3-VISHAY

    MOSFET N-CH 25V 18A 8-SOIC
    SI4116DYT1GE3

    Mfr.#: SI4116DYT1GE3

    OMO.#: OMO-SI4116DYT1GE3-1190

    Small Signal Field-Effect Transistor, 12.7A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de SI4116DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,57 US$
    0,57 US$
    10
    0,54 US$
    5,39 US$
    100
    0,51 US$
    51,03 US$
    500
    0,48 US$
    241,00 US$
    1000
    0,45 US$
    453,60 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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