OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

SI4116DY-T1-GE3

SI4116DY-T1-GE3
Mfr. #:
SI4116DY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 25V Vds 12V Vgs SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4116DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4116DY-T1-GE3 DatasheetSI4116DY-T1-GE3 Datasheet (P4-P6)SI4116DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SI4116DY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
18 A
Rds On - Resistencia de la fuente de drenaje:
8.6 mOhms
Vgs th - Voltaje umbral puerta-fuente:
600 mV
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
37 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
5 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Tipo de transistor:
1 N-Channel
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
68 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
31 ns
Tiempo típico de retardo de encendido:
7 ns
Parte # Alias:
SI4466DY-T1-E3-S
Unidad de peso:
0.006596 oz
Tags
SI4116DY-T, SI4116, SI411, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***v
    M***v
    UA

    Everything works fine. The parcel came unexpectedly quickly. I recommend to everyone

    2019-01-30
    V***v
    V***v
    RU

    Very fast! The seller is huge +++++.

    2019-06-11
    C***i
    C***i
    CA

    As described, tested and works.

    2019-04-05
    A***v
    A***v
    RU

    I recommend!

    2019-07-02
***ure Electronics
N-Channel 25 V 0.0086 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R / MOSFET N-CH 25V 18A 8-SOIC
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0115ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.4V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 25V, 18A, 8SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Power Dissipation Pd:5W; Voltage Vgs Max:12V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4116DY-T1-GE3
DISTI # V72:2272_09216447		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
RoHS: Compliant		1222
  • 1000:$0.5113
  • 500:$0.6052
  • 250:$0.6959
  • 100:$0.6979
  • 25:$0.8497
  • 10:$0.8532
  • 1:$0.9820
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8881In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8881In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 25V 18A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 2500:$0.4911
SI4116DY-T1-GE3
DISTI # 29064963		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
RoHS: Compliant		1222
  • 1000:$0.5113
  • 500:$0.6052
  • 250:$0.6959
  • 100:$0.6979
  • 25:$0.8497
  • 14:$0.8532
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R (Alt: SI4116DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.8429
  • 5000:€0.6039
  • 10000:€0.4899
  • 15000:€0.4329
  • 25000:€0.4149
SI4116DY-T1-GE3
DISTI # SI4116DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4116DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5429
  • 5000:$0.5269
  • 10000:$0.5049
  • 15000:$0.4909
  • 25000:$0.4779
SI4116DY-T1-GE3
DISTI # 16P3725		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3725)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.8220
SI4116DY-T1-GE3
DISTI # 16P3725		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 18A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:25V,On Resistance Rds(on):11.5mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V,Product Range:-, RoHS Compliant: Yes78
  • 1:$1.5100
  • 10:$1.2500
  • 25:$1.1500
  • 50:$1.0500
  • 100:$0.9550
  • 250:$0.8890
  • 500:$0.8220
SI4116DY-T1-GE3
DISTI # R1082526		Vishay DaleTRANSITOR,SI4804BDY
RoHS: Compliant		0
  • 5:$1.2800
  • 25:$1.0600
  • 100:$0.9700
  • 250:$0.8900
  • 500:$0.8300
SI4116DY-T1-GE3
DISTI # 781-SI4116DY-T1-GE3		Vishay IntertechnologiesMOSFET 25V Vds 12V Vgs SO-8
RoHS: Compliant		2103
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7960
  • 500:$0.6850
  • 1000:$0.6010
  • 2500:$0.6000
SI4116DY-T1-GE3
DISTI # 7103317P		Vishay IntertechnologiesMOSFET N-CHANNEL 25V 12.7A SOIC8, RL2600
  • 50:£0.6260
SI4116DY-T1-GE3
DISTI # 7103317		Vishay IntertechnologiesMOSFET N-CHANNEL 25V 12.7A SOIC8, PK725
  • 5:£0.9720
  • 50:£0.6260
SI4116DYT1GE3Vishay Intertechnologies 
RoHS: Compliant		Europe - 10000
    SI4116DY-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 12V Vgs SO-8
    RoHS: Compliant    		Americas -
    • 2500:$0.4820
    • 10000:$0.4410
    SI4116DY-T1-GE3
    DISTI # 1794777    		Vishay IntertechnologiesMOSFET, N CH, 25V, 18A, 8SOIC
    RoHS: Compliant    		0
    • 5:£1.0800
    • 25:£0.6960
    • 100:£0.6720
    • 250:£0.6470
    • 500:£0.6230
    SI4116DY-T1-GE3
    DISTI # C1S803601003591    		Vishay IntertechnologiesTrans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R
    RoHS: Compliant    		1222
    • 250:$0.6961
    • 100:$0.6981
    • 25:$0.8498
    • 10:$0.8533
    Imagen Parte # Descripción
    SI4410DYTRPBF

    Mfr.#: SI4410DYTRPBF

    OMO.#: OMO-SI4410DYTRPBF

    		 MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC
    MIC2025-1YM

    Mfr.#: MIC2025-1YM

    OMO.#: OMO-MIC2025-1YM

    		 Power Switch ICs - Power Distribution USB High-Side Power Switch
    LM75AIM/NOPB

    Mfr.#: LM75AIM/NOPB

    OMO.#: OMO-LM75AIM-NOPB

    		 Board Mount Temperature Sensors Digital Temp Sensor
    6469081-1

    Mfr.#: 6469081-1

    OMO.#: OMO-6469081-1

    		 Hard Metric Connectors REC 6X010P R/A B-PLANE HMZD
    6469081-1

    Mfr.#: 6469081-1

    OMO.#: OMO-6469081-1-TE-CONNECTIVITY

    		 Hard Metric Connectors REC 6X010P R/A B-PLANE HMZD
    47018-2000

    Mfr.#: 47018-2000

    OMO.#: OMO-47018-2000-409

    		 I/O Connectors 22P R/A SMT RCPT SERIAL ATA
    SI4410DYTRPBF

    Mfr.#: SI4410DYTRPBF

    OMO.#: OMO-SI4410DYTRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 10A 8-SOIC
    LM20343MH/NOPB

    Mfr.#: LM20343MH/NOPB

    OMO.#: OMO-LM20343MH-NOPB-TEXAS-INSTRUMENTS

    		 Voltage Regulators - Switching Regulators 36V 3A Adj Freq Sync Buck Reg
    LM75AIM/NOPB

    Mfr.#: LM75AIM/NOPB

    OMO.#: OMO-LM75AIM-NOPB-TEXAS-INSTRUMENTS

    		 Board Mount Temperature Sensors Digital Temp Senso
    CDRH6D38NP-5R0NC

    Mfr.#: CDRH6D38NP-5R0NC

    OMO.#: OMO-CDRH6D38NP-5R0NC-SUMIDA

    		 Fixed Inductors 5.0uH 2.90A
    Disponibilidad
    Valores:
    Available
    En orden:
    1987
    Ingrese la cantidad:
    El precio actual de SI4116DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,25 US$
    1,25 US$
    10
    1,03 US$
    10,30 US$
    100
    0,80 US$
    79,50 US$
    500
    0,68 US$
    342,00 US$
    1000
    0,54 US$
    539,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    • SUM70101EL 100 V P-Channel MOSFET
      SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • Compare SI4116DY-T1-GE3
      Compare SI4116DY-T1-GE3
      SI4116DYT1 vs SI4116DYT1E3 vs SI4116DYT1GE3
    • SIRA20DP TrenchFET® Gen IV MOSFET
      SIRA20DP TrenchFET® Gen IV MOSFET
      Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
    • P-Channel MOSFETs
      P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • SiP32452, SiP32453 Load Switch
      SiP32452, SiP32453 Load Switch
      Vishay's load switches have a low input logic control threshold and a fast turn on time.
    • PowerPAIR®
      PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    More Newest Products
    Top