IPA60R600P7XKSA1

IPA60R600P7XKSA1
Mfr. #:
IPA60R600P7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET LOW POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPA60R600P7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
6 A
Rds On - Resistencia de la fuente de drenaje:
490 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
9 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
21 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Serie:
CoolMOS P7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
19 ns
Tipo de producto:
MOSFET
Hora de levantarse:
6 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
37 ns
Tiempo típico de retardo de encendido:
7 ns
Parte # Alias:
IPA60R600P7 SP001618084
Unidad de peso:
0.068784 oz
Tags
IPA60R600P7, IPA60R600P, IPA60R60, IPA60R6, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600V 600 mOhm 9 nC CoolMOS™ Power Mosfet - TO-220-3FP
***i-Key
MOSFET N-CHANNEL 600V 6A TO220
***ical
600V CoolMOS P7 Power Transistor
***ronik
N-CH 650V 16A 600mOhm TO220FP
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 600V, 6A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.49ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:21W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 600V, 6A, TO-220FP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.49ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:21W; Modello Case Transistor:TO-220FP; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
Parte # Mfg. Descripción Valores Precio
IPA60R600P7XKSA1
DISTI # IPA60R600P7XKSA1-ND
Infineon Technologies AGMOSFET N-CHANNEL 600V 6A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
341In Stock
  • 1000:$0.7338
  • 500:$0.9294
  • 100:$1.1985
  • 10:$1.5160
  • 1:$1.7100
IPA60R600P7XKSA1
DISTI # SP001618084
Infineon Technologies AGLOW POWER_NEW (Alt: SP001618084)
RoHS: Compliant
Min Qty: 1
Europe - 500
  • 1:€0.9809
  • 10:€0.8229
  • 25:€0.6869
  • 50:€0.5989
  • 100:€0.5869
  • 500:€0.5709
  • 1000:€0.5609
IPA60R600P7XKSA1
DISTI # IPA60R600P7XKSA1
Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPA60R600P7XKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.6399
  • 2000:$0.6169
  • 3000:$0.5949
  • 5000:$0.5749
  • 10000:$0.5649
IPA60R600P7XKSA1
DISTI # 34AC1649
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes310
  • 1000:$0.6680
  • 500:$0.8450
  • 100:$0.9570
  • 10:$1.2400
  • 1:$1.4500
IPA60R600P7XKSA1Infineon Technologies AGSingle N-Channel 600V 600 mOhm 9 nC CoolMOS Power Mosfet - TO-220-3FP
RoHS: Not Compliant
1500Tube
  • 500:$0.6800
  • 1000:$0.6450
  • 1500:$0.6400
IPA60R600P7XKSA1
DISTI # 726-IPA60R600P7XKSA1
Infineon Technologies AGMOSFET LOW POWER_NEW
RoHS: Compliant
458
  • 1:$1.4500
  • 10:$1.2400
  • 100:$0.9570
  • 500:$0.8450
  • 1000:$0.6680
IPA60R600P7XKSA1
DISTI # IPA60R600P7XKSA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,4A,21W,TO220FP116
  • 1:$1.0600
  • 5:$0.9500
  • 25:$0.8400
  • 100:$0.7600
IPA60R600P7XKSA1
DISTI # 2784040
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP
RoHS: Compliant
310
  • 500:£0.6640
  • 250:£0.7080
  • 100:£0.7520
  • 25:£0.9720
  • 5:£1.0700
IPA60R600P7XKSA1
DISTI # 2784040
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220FP
RoHS: Compliant
310
  • 5000:$0.9970
  • 1000:$1.0500
  • 500:$1.1100
  • 250:$1.2800
  • 100:$1.5200
  • 25:$1.8700
  • 5:$2.1400
IPA60R600P7XKSA1
DISTI # XSFP00000116785
Infineon Technologies AG 
RoHS: Compliant
1500 in Stock0 on Order
  • 1500:$1.2400
  • 500:$1.3600
Imagen Parte # Descripción
IPD60R600P7ATMA1

Mfr.#: IPD60R600P7ATMA1

OMO.#: OMO-IPD60R600P7ATMA1

MOSFET
IPA65R125C7XKSA1

Mfr.#: IPA65R125C7XKSA1

OMO.#: OMO-IPA65R125C7XKSA1

MOSFET HIGH POWER BEST IN CLASS
B82145A1225J000

Mfr.#: B82145A1225J000

OMO.#: OMO-B82145A1225J000

Fixed Inductors HF-CHOKE HLBC 2200UH 5%
PWR221T-30-1000F

Mfr.#: PWR221T-30-1000F

OMO.#: OMO-PWR221T-30-1000F-BOURNS

Thick Film Resistors - Through Hole Pwr Resistor 1% 100 Ohms -55Cto150C
PWR221T-30-2000F

Mfr.#: PWR221T-30-2000F

OMO.#: OMO-PWR221T-30-2000F-BOURNS

Thick Film Resistors - Through Hole Pwr Resistor 1% 200 Ohms -55Cto150C
B82145A1225J000

Mfr.#: B82145A1225J000

OMO.#: OMO-B82145A1225J000-EPCOS

FIXED IND 2.2MH 250MA 8 OHM TH
IPA60R280P7SXKSA1

Mfr.#: IPA60R280P7SXKSA1

OMO.#: OMO-IPA60R280P7SXKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CHANNEL 600V 12A TO220
DF13-3S-1.25C

Mfr.#: DF13-3S-1.25C

OMO.#: OMO-DF13-3S-1-25C-HIROSE

Headers & Wire Housings 1.25MM RECEPT HSNG 3P SINGLE ROW CRIMP
IPA65R190C7

Mfr.#: IPA65R190C7

OMO.#: OMO-IPA65R190C7-1190

Power Field-Effect Transistor, 8A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPD60R600P7ATMA1

Mfr.#: IPD60R600P7ATMA1

OMO.#: OMO-IPD60R600P7ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 6A TO252-3
Disponibilidad
Valores:
448
En orden:
2431
Ingrese la cantidad:
El precio actual de IPA60R600P7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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