OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IPA65R125C7XKSA1

IPA65R125C7XKSA1
Mfr. #:
IPA65R125C7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER BEST IN CLASS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPA65R125C7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPA65R125C7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
10 A
Rds On - Resistencia de la fuente de drenaje:
125 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
35 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
32 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
16.15 mm
Longitud:
10.65 mm
Serie:
CoolMOS C7
Ancho:
4.85 mm
Marca:
Infineon Technologies
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
71 ns
Tiempo típico de retardo de encendido:
14 ns
Parte # Alias:
IPA65R125C7 SP001080136
Unidad de peso:
0.211644 oz
Tags
IPA65R1, IPA65R, IPA65, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220FP Tube
***et
CoolMOS C7 Power Transistor N-Channel 650V 10A 3-Pin TO-220 FP
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPA65R125C7XKSA1
DISTI # 29499272		Infineon Technologies AGTrans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		500
  • 500:$2.6235
IPA65R125C7XKSA1
DISTI # IPA65R125C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$2.9211
IPA65R125C7XKSA1
DISTI # V36:1790_06378464		Infineon Technologies AGTrans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		0
    IPA65R125C7XKSA1
    DISTI # SP001080136    		Infineon Technologies AGTrans MOSFET N-CH 700V 10A 3-Pin TO-220 FP Tube (Alt: SP001080136)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 1000
    • 1000:€1.6900
    • 100:€1.8900
    • 500:€1.8900
    • 50:€1.9900
    • 25:€2.0900
    • 10:€2.1900
    • 1:€2.3900
    IPA65R125C7XKSA1
    DISTI # IPA65R125C7XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 10A 3-Pin TO-220 FP Tube - Bulk (Alt: IPA65R125C7XKSA1)
    Min Qty: 172
    Container: Bulk    		Americas - 0
    • 860:$1.7900
    • 1720:$1.7900
    • 516:$1.8900
    • 344:$1.9900
    • 172:$2.0900
    IPA65R125C7XKSA1
    DISTI # IPA65R125C7XKSA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 10A 3-Pin TO-220 FP Tube - Rail/Tube (Alt: IPA65R125C7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 3000:$1.9900
    • 5000:$1.9900
    • 2000:$2.0900
    • 1000:$2.1900
    • 500:$2.2900
    IPA65R125C7XKSA1
    DISTI # 726-IPA65R125C7XKSA1    		Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS332
    • 1:$4.2300
    • 10:$3.5900
    • 100:$3.1200
    • 250:$2.9600
    • 500:$2.6500
    IPA65R125C7XKSA1Infineon Technologies AGPower Field-Effect Transistor, 10A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		67500
    • 1000:$1.9200
    • 500:$2.0200
    • 100:$2.1100
    • 25:$2.2000
    • 1:$2.3600
    IPA65R125C7XKSA1
    DISTI # XSKDRABS0033124    		Infineon Technologies AG 
    RoHS: Compliant    		800 in Stock0 on Order
    • 800:$3.0120
    • 250:$3.2280
    IPA65R125C7XKSA1
    DISTI # IPA65R125C7    		Infineon Technologies AGN-Ch 650V 10A 32W 0,125R TO220-Fullpak
    RoHS: Compliant    		486
    • 1:€6.1700
    • 10:€3.1700
    • 50:€2.1700
    • 100:€1.9900
    Imagen Parte # Descripción
    2EDN8524RXUMA1

    Mfr.#: 2EDN8524RXUMA1

    OMO.#: OMO-2EDN8524RXUMA1

    		 Gate Drivers DRIVER IC
    IPW60R145CFD7XKSA1

    Mfr.#: IPW60R145CFD7XKSA1

    OMO.#: OMO-IPW60R145CFD7XKSA1

    		 MOSFET HIGH POWER_NEW
    RB098BM100FHTL

    Mfr.#: RB098BM100FHTL

    OMO.#: OMO-RB098BM100FHTL

    		 Schottky Diodes & Rectifiers 100V Vr 6A Io SBD TO-252(DPAK) 3A
    SCS210AJHRTLL

    Mfr.#: SCS210AJHRTLL

    OMO.#: OMO-SCS210AJHRTLL

    		 Schottky Diodes & Rectifiers 650V 10A SiC SBD AEC-Q101 Qualified
    LM5161QPWPRQ1

    Mfr.#: LM5161QPWPRQ1

    OMO.#: OMO-LM5161QPWPRQ1

    		 Switching Voltage Regulators LM5161-Q1
    TLV75733PDBVR

    Mfr.#: TLV75733PDBVR

    OMO.#: OMO-TLV75733PDBVR

    		 LDO Voltage Regulators 1A LDO
    FCSL76R020DER

    Mfr.#: FCSL76R020DER

    OMO.#: OMO-FCSL76R020DER

    		 Current Sense Resistors - SMD 0.02 ohm 0.5% 3W
    LM5161QPWPRQ1

    Mfr.#: LM5161QPWPRQ1

    OMO.#: OMO-LM5161QPWPRQ1-TEXAS-INSTRUMENTS

    		 IC REG BCK FLYBCK ADJ 14HTSSOP
    RB098BM100FHTL

    Mfr.#: RB098BM100FHTL

    OMO.#: OMO-RB098BM100FHTL-ROHM-SEMI

    		 SCHOTTKY BARRIER DIODE
    SCS210AJHRTLL

    Mfr.#: SCS210AJHRTLL

    OMO.#: OMO-SCS210AJHRTLL-ROHM-SEMI

    		 DIODE SCHOTTKY 650V 10A TO263AB
    Disponibilidad
    Valores:
    322
    En orden:
    2305
    Ingrese la cantidad:
    El precio actual de IPA65R125C7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,23 US$
    4,23 US$
    10
    3,59 US$
    35,90 US$
    100
    3,12 US$
    312,00 US$
    250
    2,96 US$
    740,00 US$
    500
    2,65 US$
    1 325,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    More Newest Products
    Top