BSC026NE2LS5

BSC026NE2LS5
Mfr. #:
BSC026NE2LS5
Fabricante:
Infineon Technologies
Descripción:
Trans MOSFET N-CH 25V PG-TDSON-8 T/R (Alt: BSC026NE2LS5)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC026NE2LS5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
BSC026NE2LS5 SP001212432
Estilo de montaje
SMD / SMT
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Disipación de potencia Pd
29 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
2 ns
Hora de levantarse
3 ns
Vgs-Puerta-Fuente-Voltaje
+/- 16 V
Id-corriente-de-drenaje-continua
82 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Source-Threshold-Voltage
1.2 V
Resistencia a la fuente de desagüe de Rds
4 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
13 ns
Tiempo de retardo de encendido típico
3 ns
Qg-Gate-Charge
12 nC
Transconductancia directa-Mín.
55 S
Modo de canal
Mejora
Tags
BSC026NE, BSC026, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSC026NE2LS5ATMA1
DISTI # V72:2272_06384601
Infineon Technologies AGTrans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R
RoHS: Compliant
2408
  • 1000:$0.4817
  • 500:$0.5927
  • 250:$0.6620
  • 100:$0.6691
  • 25:$0.8334
  • 10:$0.8432
  • 1:$0.9629
BSC026NE2LS5ATMA1
DISTI # BSC026NE2LS5ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 25V 24A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8086In Stock
  • 1000:$0.5999
  • 500:$0.7599
  • 100:$0.9799
  • 10:$1.2400
  • 1:$1.4000
BSC026NE2LS5ATMA1
DISTI # BSC026NE2LS5ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 25V 24A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8086In Stock
  • 1000:$0.5999
  • 500:$0.7599
  • 100:$0.9799
  • 10:$1.2400
  • 1:$1.4000
BSC026NE2LS5ATMA1
DISTI # BSC026NE2LS5ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 25V 24A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 5000:$0.5164
BSC026NE2LS5ATMA1
DISTI # 29726537
Infineon Technologies AGTrans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.6787
BSC026NE2LS5ATMA1
DISTI # 30171923
Infineon Technologies AGTrans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R
RoHS: Compliant
2408
  • 1000:$0.4817
  • 500:$0.5927
  • 250:$0.6620
  • 100:$0.6691
  • 25:$0.8334
  • 13:$0.8432
BSC026NE2LS5
DISTI # BSC026NE2LS5
Infineon Technologies AGTrans MOSFET N-CH 25V PG-TDSON-8 T/R (Alt: BSC026NE2LS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
    BSC026NE2LS5ATMA1
    DISTI # BSC026NE2LS5ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 25V PG-TDSON-8 T/R - Tape and Reel (Alt: BSC026NE2LS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$0.5079
    • 10000:$0.4899
    • 20000:$0.4719
    • 30000:$0.4559
    • 50000:$0.4479
    BSC026NE2LS5ATMA1
    DISTI # 34AC1375
    Infineon Technologies AGMOSFET, N-CH, 25V, 82A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:82A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power DissipationRoHS Compliant: Yes0
    • 1:$1.1600
    • 10:$0.9890
    • 25:$0.9120
    • 50:$0.8360
    • 100:$0.7590
    • 250:$0.7150
    • 500:$0.6710
    • 1000:$0.5300
    BSC026NE2LS5ATMA1Infineon Technologies AGPower Field-Effect Transistor, 24A I(D), 25V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    64375
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    BSC026NE2LS5ATMA1Infineon Technologies AGBSC026xx Series 25 V 82 A 2.6 mOhm N-Ch OptiMOS Power-MOSFET - PG-TDSON-8
    RoHS: Compliant
    5000Reel
    • 5000:$0.4850
    BSC026NE2LS5ATMA1Infineon Technologies AGBSC026xx Series 25 V 82 A 2.6 mOhm N-Ch OptiMOS Power-MOSFET - PG-TDSON-8
    RoHS: Compliant
    4250Cut Tape/Mini-Reel
    • 1:$0.7100
    • 100:$0.6100
    • 250:$0.5950
    • 500:$0.5800
    • 1500:$0.5400
    BSC026NE2LS5ATMA1
    DISTI # 726-BSC026NE2LS5ATMA
    Infineon Technologies AGMOSFET LV POWER MOS
    RoHS: Compliant
    6860
    • 1:$1.1600
    • 10:$0.9890
    • 100:$0.7590
    • 500:$0.6710
    • 1000:$0.5300
    • 5000:$0.4700
    BSC026NE2LS5ATMA1
    DISTI # 1336581
    Infineon Technologies AGMOSFET OPTIMOS5 25V 82A 2.6M SUPERSO8, RL3845
    • 5000:£0.3830
    • 15000:£0.3680
    BSC026NE2LS5ATMA1
    DISTI # 2781052
    Infineon Technologies AGMOSFET, N-CH, 25V, 82A, TDSON
    RoHS: Compliant
    0
    • 5:$1.6700
    • 25:$1.4500
    • 100:$1.1800
    BSC026NE2LS5ATMA1
    DISTI # C1S322000625394
    Infineon Technologies AGTrans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R
    RoHS: Compliant
    2408
    • 250:$0.6843
    • 100:$0.6860
    • 25:$0.8468
    • 10:$0.8500
    BSC026NE2LS5ATMA1
    DISTI # 2781052
    Infineon Technologies AGMOSFET, N-CH, 25V, 82A, TDSON
    RoHS: Compliant
    0
    • 5:£0.8500
    • 25:£0.6940
    • 100:£0.5850
    • 250:£0.5340
    • 500:£0.5170
    Imagen Parte # Descripción
    BSC026N04LS

    Mfr.#: BSC026N04LS

    OMO.#: OMO-BSC026N04LS

    MOSFET DIFFERENTIATED MOSFETS
    BSC026N02KS G

    Mfr.#: BSC026N02KS G

    OMO.#: OMO-BSC026N02KS-G

    MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
    BSC026N04LSATMA1

    Mfr.#: BSC026N04LSATMA1

    OMO.#: OMO-BSC026N04LSATMA1

    MOSFET MV POWER MOS
    BSC026N08NS5ATMA1

    Mfr.#: BSC026N08NS5ATMA1

    OMO.#: OMO-BSC026N08NS5ATMA1

    MOSFET N-Ch 80V 100A TDSON-8
    BSC026N02KSGAUMA1

    Mfr.#: BSC026N02KSGAUMA1

    OMO.#: OMO-BSC026N02KSGAUMA1

    MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
    BSC026NE2LS5ATMA1

    Mfr.#: BSC026NE2LS5ATMA1

    OMO.#: OMO-BSC026NE2LS5ATMA1

    MOSFET LV POWER MOS
    BSC026N02KSG

    Mfr.#: BSC026N02KSG

    OMO.#: OMO-BSC026N02KSG-1190

    Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC026N02KSGAUMA1

    Mfr.#: BSC026N02KSGAUMA1

    OMO.#: OMO-BSC026N02KSGAUMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 20V 100A TDSON-8
    BSC026N04LS

    Mfr.#: BSC026N04LS

    OMO.#: OMO-BSC026N04LS-1190

    Trans MOSFET N-CH 40V 23A
    BSC026N04LSATMA1

    Mfr.#: BSC026N04LSATMA1

    OMO.#: OMO-BSC026N04LSATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 40V 23A 8TDSON
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de BSC026NE2LS5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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