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BSC026NE2LS5ATMA1

BSC026NE2LS5ATMA1
Mfr. #:
BSC026NE2LS5ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET LV POWER MOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC026NE2LS5ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BSC026NE2LS5ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
82 A
Rds On - Resistencia de la fuente de drenaje:
4 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.2 V
Vgs - Voltaje puerta-fuente:
16 V
Qg - Carga de puerta:
12 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
29 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.27 mm
Longitud:
5.9 mm
Serie:
OptiMOS 5
Ancho:
5.15 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
55 S
Otoño:
2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
3 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
13 ns
Tiempo típico de retardo de encendido:
3 ns
Parte # Alias:
BSC026NE2LS5 SP001212432
Tags
BSC026NE, BSC026, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSC026xx Series 25 V 82 A 2.6 mOhm N-Ch OptiMOS™ Power-MOSFET - PG-TDSON-8
***ark
Mosfet, N-Ch, 25V, 82A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:82A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.0022Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipationrohs Compliant: Yes
***ineon
With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
BSC026NE2LS5ATMA1
DISTI # V72:2272_06384601		Infineon Technologies AGTrans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R
RoHS: Compliant		444
  • 250:$0.6798
  • 100:$0.7554
  • 25:$0.8834
  • 10:$1.0796
  • 1:$1.2528
BSC026NE2LS5ATMA1
DISTI # V36:1790_06384601		Infineon Technologies AGTrans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R
RoHS: Compliant		0
    BSC026NE2LS5ATMA1
    DISTI # BSC026NE2LS5ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 25V 24A 8TDSON
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		4138In Stock
    • 1000:$0.5999
    • 500:$0.7599
    • 100:$0.9199
    • 10:$1.1800
    • 1:$1.3200
    BSC026NE2LS5ATMA1
    DISTI # BSC026NE2LS5ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 25V 24A 8TDSON
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		4138In Stock
    • 1000:$0.5999
    • 500:$0.7599
    • 100:$0.9199
    • 10:$1.1800
    • 1:$1.3200
    BSC026NE2LS5ATMA1
    DISTI # BSC026NE2LS5ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 25V 24A 8TDSON
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)    		On Order
    • 10000:$0.4970
    • 5000:$0.5164
    BSC026NE2LS5ATMA1
    DISTI # 30171923    		Infineon Technologies AGTrans MOSFET N-CH 25V 24A 8-Pin TDSON EP T/R
    RoHS: Compliant    		444
    • 250:$0.6798
    • 100:$0.7554
    • 25:$0.8834
    • 13:$0.9815
    BSC026NE2LS5ATMA1
    DISTI # BSC026NE2LS5ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 25V PG-TDSON-8 T/R - Bulk (Alt: BSC026NE2LS5ATMA1)
    RoHS: Compliant
    Min Qty: 782
    Container: Bulk    		Americas - 0
    • 7820:$0.4059
    • 3910:$0.4129
    • 2346:$0.4279
    • 1564:$0.4439
    • 782:$0.4609
    BSC026NE2LS5ATMA1
    DISTI # BSC026NE2LS5ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 25V PG-TDSON-8 T/R - Tape and Reel (Alt: BSC026NE2LS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 50000:$0.4479
    • 30000:$0.4559
    • 20000:$0.4719
    • 10000:$0.4899
    • 5000:$0.5079
    BSC026NE2LS5ATMA1
    DISTI # SP001212432    		Infineon Technologies AGTrans MOSFET N-CH 25V PG-TDSON-8 T/R (Alt: SP001212432)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 50000:€0.4109
    • 30000:€0.4429
    • 20000:€0.4799
    • 10000:€0.5229
    • 5000:€0.6399
    BSC026NE2LS5ATMA1
    DISTI # 34AC1375    		Infineon Technologies AGMOSFET, N-CH, 25V, 82A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:82A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power DissipationRoHS Compliant: Yes0
    • 1000:$0.5350
    • 500:$0.6780
    • 250:$0.7220
    • 100:$0.7670
    • 50:$0.8440
    • 25:$0.9210
    • 10:$0.9990
    • 1:$1.1600
    BSC026NE2LS5ATMA1Infineon Technologies AGBSC026xx Series 25 V 82 A 2.6 mOhm N-Ch OptiMOS Power-MOSFET - PG-TDSON-8
    RoHS: Compliant    		1831Cut Tape/Mini-Reel
    • 1:$0.6100
    • 100:$0.5350
    • 250:$0.5200
    • 500:$0.5100
    • 1500:$0.4950
    BSC026NE2LS5ATMA1
    DISTI # 726-BSC026NE2LS5ATMA    		Infineon Technologies AGMOSFET LV POWER MOS
    RoHS: Compliant    		0
    • 1:$1.1500
    • 10:$0.9890
    • 100:$0.7590
    • 500:$0.6710
    • 1000:$0.5300
    • 5000:$0.4700
    • 10000:$0.4520
    BSC026NE2LS5ATMA1Infineon Technologies AGPower Field-Effect Transistor, 24A I(D), 25V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		54432
    • 1000:$0.4200
    • 500:$0.4400
    • 100:$0.4600
    • 25:$0.4800
    • 1:$0.5200
    BSC026NE2LS5ATMA1
    DISTI # 1336581    		Infineon Technologies AGMOSFET OPTIMOS5 25V 82A 2.6M SUPERSO8, RL3830
    • 15000:£0.3700
    • 5000:£0.3800
    BSC026NE2LS5ATMA1
    DISTI # 2781052    		Infineon Technologies AGMOSFET, N-CH, 25V, 82A, TDSON
    RoHS: Compliant    		0
    • 100:$1.0700
    • 25:$1.3100
    • 5:$1.5100
    BSC026NE2LS5ATMA1
    DISTI # 2781052    		Infineon Technologies AGMOSFET, N-CH, 25V, 82A, TDSON0
    • 500:£0.5270
    • 250:£0.5620
    • 100:£0.5970
    • 25:£0.7780
    • 5:£0.8650
    BSC026NE2LS5ATMA1
    DISTI # XSFP00000141015    		Infineon Technologies AG 
    RoHS: Compliant    		989 in Stock0 on Order
    • 989:$0.6778
    • 164:$0.7176
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    Disponibilidad
    Valores:
    Available
    En orden:
    1993
    Ingrese la cantidad:
    El precio actual de BSC026NE2LS5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,15 US$
    1,15 US$
    10
    0,99 US$
    9,89 US$
    100
    0,76 US$
    75,90 US$
    500
    0,67 US$
    335,50 US$
    1000
    0,53 US$
    530,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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