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SQJ868EP-T1_GE3

SQJ868EP-T1_GE3
Mfr. #:
SQJ868EP-T1_GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET Dual N-Ch 40V AEC-Q101 Qualified
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SQJ868EP-T1_GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ868EP-T1_GE3 DatasheetSQJ868EP-T1_GE3 Datasheet (P4-P6)SQJ868EP-T1_GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SQJ868EP-T1_GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8L-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
58 A
Rds On - Resistencia de la fuente de drenaje:
6.2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
55 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
48 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Carrete
Serie:
SQJ868EP
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
85 S
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
9 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
26 ns
Tiempo típico de retardo de encendido:
10 ns
Tags
SQJ86, SQJ8, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Power MOSFET Automotive N-Channel Single 40V VDS ±20V VGS 58A ID 175°C 8-Pin PowerPAK SOIC T/R
***ment14 APAC
MOSFET, N-CH, 40V, 58A, 175DEG C, 48W; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Source Voltage Vds:40V; On Resistance
***nell
MOSFET, N-CH, 40V, 58A, 175DEG C, 48W; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 48W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Parte # Mfg. Descripción Valores Precio
SQJ868EP-T1_GE3
DISTI # V72:2272_21388835		Vishay IntertechnologiesSQJ868EP-T1_GE32990
  • 75000:$0.3168
  • 30000:$0.3226
  • 15000:$0.3325
  • 6000:$0.3454
  • 3000:$0.3559
  • 1000:$0.3678
  • 500:$0.4635
  • 250:$0.5605
  • 100:$0.5715
  • 50:$0.6010
  • 25:$0.6677
  • 10:$0.8162
  • 1:$0.9886
SQJ868EP-T1_GE3
DISTI # V99:2348_21388835		Vishay IntertechnologiesSQJ868EP-T1_GE30
  • 3000000:$0.3430
  • 1500000:$0.3431
  • 300000:$0.3482
  • 30000:$0.3552
  • 3000:$0.3563
SQJ868EP-T1_GE3
DISTI # SQJ868EP-T1_GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 58A POWERPAKSOL
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2990In Stock
  • 1000:$0.4049
  • 500:$0.5061
  • 100:$0.6403
  • 10:$0.8350
  • 1:$0.9500
SQJ868EP-T1_GE3
DISTI # SQJ868EP-T1_GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 58A POWERPAKSOL
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2990In Stock
  • 1000:$0.4049
  • 500:$0.5061
  • 100:$0.6403
  • 10:$0.8350
  • 1:$0.9500
SQJ868EP-T1_GE3
DISTI # SQJ868EP-T1_GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 58A POWERPAKSOL
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.3112
  • 15000:$0.3194
  • 6000:$0.3317
  • 3000:$0.3563
SQJ868EP-T1_GE3
DISTI # 30287465		Vishay IntertechnologiesSQJ868EP-T1_GE32990
  • 20:$0.9886
SQJ868EP-T1_GE3
DISTI # SQJ868EP-T1_GE3		Vishay IntertechnologiesTrenchFET Power MOSFET Automotive N-Channel Single 40V VDS ±20V VGS 58A ID 175°C 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SQJ868EP-T1_GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2999
  • 18000:$0.3079
  • 12000:$0.3169
  • 6000:$0.3299
  • 3000:$0.3399
SQJ868EP-T1_GE3
DISTI # 81AC2820		Vishay IntertechnologiesMOSFET, N-CH, 40V, 58A, 175DEG C, 48W,Transistor Polarity:N Channel,Continuous Drain Current Id:58A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes5
  • 1000:$0.3940
  • 500:$0.5000
  • 250:$0.5400
  • 100:$0.5810
  • 50:$0.6390
  • 25:$0.6980
  • 10:$0.7560
  • 1:$0.9190
SQJ868EP-T1_GE3
DISTI # 59AC7657		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) 175C MOSFET0
  • 50000:$0.3020
  • 30000:$0.3160
  • 20000:$0.3400
  • 10000:$0.3630
  • 5000:$0.3940
  • 1:$0.4030
SQJ868EP-T1_GE3
DISTI # 78-SQJ868EP-T1_GE3		Vishay IntertechnologiesMOSFET Dual N-Ch 40V AEC-Q101 Qualified
RoHS: Compliant		2450
  • 1:$0.9100
  • 10:$0.7490
  • 100:$0.5750
  • 500:$0.4950
  • 1000:$0.3900
SQJ868EP-T1_GE3
DISTI # 2932971		Vishay IntertechnologiesMOSFET, N-CH, 40V, 58A, 175DEG C, 48W25
  • 500:£0.3580
  • 250:£0.3880
  • 100:£0.4170
  • 10:£0.5930
  • 1:£0.7540
SQJ868EP-T1_GE3
DISTI # 2932971		Vishay IntertechnologiesMOSFET, N-CH, 40V, 58A, 175DEG C, 48W
RoHS: Compliant		5
  • 1000:$0.5220
  • 500:$0.5510
  • 250:$0.6480
  • 100:$0.7890
  • 10:$1.0100
  • 1:$1.2200
Imagen Parte # Descripción
SQJ868EP-T1_GE3

Mfr.#: SQJ868EP-T1_GE3

OMO.#: OMO-SQJ868EP-T1-GE3

 MOSFET Dual N-Ch 40V AEC-Q101 Qualified
SQJ868EP

Mfr.#: SQJ868EP

OMO.#: OMO-SQJ868EP-1190

 Nuevo y original
SQJ868EP-T1_GE3

Mfr.#: SQJ868EP-T1_GE3

OMO.#: OMO-SQJ868EP-T1-GE3-VISHAY

 MOSFET N-CH 40V 58A POWERPAKSOL
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de SQJ868EP-T1_GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,91 US$
0,91 US$
10
0,75 US$
7,49 US$
100
0,58 US$
57,50 US$
500
0,50 US$
247,50 US$
1000
0,39 US$
390,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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