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SQM100N10-10_GE3

SQM100N10-10_GE3
Mfr. #:
SQM100N10-10_GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 100V 100A TO-263
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SQM100N10-10_GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SQM100N10-10_GE3 más información
Atributo del producto
Valor de atributo
Tags
SQM100N10-1, SQM100N1, SQM100N, SQM100, SQM10, SQM1, SQM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
N-CHANNEL 100-V (D-S) 175C MOSFET
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Parte # Mfg. Descripción Valores Precio
SQM100N10-10-GE3
DISTI # V36:1790_09219223		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) 175C MOS
RoHS: Compliant		0
  • 800000:$1.3910
  • 400000:$1.3930
  • 80000:$1.5270
  • 8000:$1.7430
  • 800:$1.7780
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 5600:$1.3709
  • 2400:$1.4244
  • 1600:$1.4994
  • 800:$1.7779
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		800In Stock
  • 100:$2.1511
  • 10:$2.6250
  • 1:$2.9200
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		800In Stock
  • 100:$2.1511
  • 10:$2.6250
  • 1:$2.9200
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SQM100N10-10_GE3)
RoHS: Compliant
Min Qty: 800
Container: Bulk		Americas - 0
  • 3200:$1.2900
  • 4800:$1.2900
  • 8000:$1.2900
  • 800:$1.3900
  • 1600:$1.3900
SQM100N10-10_GE3
DISTI # SQM100N10-10-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 (Alt: SQM100N10-10-GE3)
RoHS: Compliant
Min Qty: 800		Europe - 0
  • 8000:€1.2900
  • 4800:€1.3900
  • 3200:€1.4900
  • 1600:€1.8900
  • 800:€2.6900
SQM100N10-10_GE3
DISTI # 78-SQM100N10-10_GE3		Vishay IntertechnologiesMOSFET 100V 100A 375W AEC-Q101 Qualified
RoHS: Compliant		800
  • 1:$3.2100
  • 10:$2.8600
  • 100:$2.3400
  • 250:$1.8900
  • 500:$1.7500
  • 800:$1.5900
  • 2400:$1.3500
SQM100N10-10-GE3
DISTI # 78-SQM100N10-10-GE3		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3
RoHS: Compliant		0
    SQM100N10-10-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 100A I(D), 100V, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB783
    • 348:$1.3320
    • 121:$1.4430
    • 1:$3.3300
    SQM100N1010GE3Vishay IntertechnologiesPower Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		800
      Imagen Parte # Descripción
      SQM100N10-10_GE3

      Mfr.#: SQM100N10-10_GE3

      OMO.#: OMO-SQM100N10-10-GE3-A5D

      		 MOSFET 100V 100A 375W AEC-Q101 Qualified
      SQM100N10-10-GE3

      Mfr.#: SQM100N10-10-GE3

      OMO.#: OMO-SQM100N10-10-GE3-045

      		 MOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3
      SQM100N10-10

      Mfr.#: SQM100N10-10

      OMO.#: OMO-SQM100N10-10-1190

      		 Nuevo y original
      SQM100N10-10-GE3

      Mfr.#: SQM100N10-10-GE3

      OMO.#: OMO-SQM100N10-10-GE3-1190

      		 N-CHANNEL 100-V (D-S) 175C MOS
      SQM100N10-10_GE3

      Mfr.#: SQM100N10-10_GE3

      OMO.#: OMO-SQM100N10-10-GE3-VISHAY

      		 MOSFET N-CH 100V 100A TO-263
      SQM100N1010GE3

      Mfr.#: SQM100N1010GE3

      OMO.#: OMO-SQM100N1010GE3-1190

      		 Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de SQM100N10-10_GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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