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SQM100N10-10_GE3

SQM100N10-10_GE3
Mfr. #:
SQM100N10-10_GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 100V 100A 375W AEC-Q101 Qualified
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SQM100N10-10_GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQM100N10-10_GE3 DatasheetSQM100N10-10_GE3 Datasheet (P4-P6)SQM100N10-10_GE3 Datasheet (P7-P9)SQM100N10-10_GE3 Datasheet (P10)
ECAD Model:
Más información:
SQM100N10-10_GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
7 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
185 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
375 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
4.83 mm
Longitud:
10.67 mm
Serie:
SQ
Tipo de transistor:
1 N-Channel
Ancho:
9.65 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
115 S
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
14 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
44 ns
Tiempo típico de retardo de encendido:
13 ns
Unidad de peso:
0.077603 oz
Tags
SQM100N10-1, SQM100N1, SQM100N, SQM100, SQM10, SQM1, SQM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
***-Wing Technology
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
N-CHANNEL 100-V (D-S) 175C MOSFET
***emi
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
***Yang
Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***nell
MOSFET, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 9mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W
***r Electronics
Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 39 / Turn-OFF Delay Time ns = 96 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 245 / Power Dissipation (Pd) W = 310
***icroelectronics
N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package
***et
Trans MOSFET N-CH 100V 120A 3-Pin H2PAK T/R
*** Electronic Components
MOSFET N-Ch 100V 7.8 mOhm 120 A STripFET
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***icroelectronics SCT
Power MOSFETs, 100V, 120A, H2PAK-2, Tape and Reel
***icroelectronics
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
***ure Electronics
N-channel 100 V 0.0068 Ohm Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance
***nell
MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 120W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET VII DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
***ical
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) H2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 100V, 80A, 175DEG C, 110W;
***icroelectronics SCT
Power MOSFETs, 100V, 80A, H2PAK-2, Tape and Reel
***ure Electronics
N-Channel 80 V 0.01 Ohm Surface Mount UltraFET Power Mosfet - TO-263AB
***emi
N-Channel UltraFET Power MOSFET 80V, 75A, 10mΩ
***Yang
Trans MOSFET N-CH 80V 75A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N CH, 80V, 75A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Source Voltage Vds:80V; On Resistance
***r Electronics
Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 80V, 75A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0082ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 270W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ark
MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***ow.cn
Trans MOSFET N-CH Si 100V 97A Automotive 3-Pin(2+Tab) D2PAK Tube
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 100V 69A D2PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Summary of Features: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***nell
MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Parte # Mfg. Descripción Valores Precio
SQM100N10-10-GE3
DISTI # V36:1790_09219223		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) 175C MOS
RoHS: Compliant		0
  • 800000:$1.3910
  • 400000:$1.3930
  • 80000:$1.5270
  • 8000:$1.7430
  • 800:$1.7780
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 5600:$1.3709
  • 2400:$1.4244
  • 1600:$1.4994
  • 800:$1.7779
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		800In Stock
  • 100:$2.1511
  • 10:$2.6250
  • 1:$2.9200
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 100A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		800In Stock
  • 100:$2.1511
  • 10:$2.6250
  • 1:$2.9200
SQM100N10-10_GE3
DISTI # SQM100N10-10_GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SQM100N10-10_GE3)
RoHS: Compliant
Min Qty: 800
Container: Bulk		Americas - 0
  • 3200:$1.2900
  • 4800:$1.2900
  • 8000:$1.2900
  • 800:$1.3900
  • 1600:$1.3900
SQM100N10-10_GE3
DISTI # SQM100N10-10-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 (Alt: SQM100N10-10-GE3)
RoHS: Compliant
Min Qty: 800		Europe - 0
  • 8000:€1.2900
  • 4800:€1.3900
  • 3200:€1.4900
  • 1600:€1.8900
  • 800:€2.6900
SQM100N10-10_GE3
DISTI # 78-SQM100N10-10_GE3		Vishay IntertechnologiesMOSFET 100V 100A 375W AEC-Q101 Qualified
RoHS: Compliant		800
  • 1:$3.2100
  • 10:$2.8600
  • 100:$2.3400
  • 250:$1.8900
  • 500:$1.7500
  • 800:$1.5900
  • 2400:$1.3500
SQM100N10-10-GE3
DISTI # 78-SQM100N10-10-GE3		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3
RoHS: Compliant		0
    SQM100N10-10-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 100A I(D), 100V, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB783
    • 348:$1.3320
    • 121:$1.4430
    • 1:$3.3300
    SQM100N1010GE3Vishay IntertechnologiesPower Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		800
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      Disponibilidad
      Valores:
      755
      En orden:
      2738
      Ingrese la cantidad:
      El precio actual de SQM100N10-10_GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,21 US$
      3,21 US$
      10
      2,86 US$
      28,60 US$
      100
      2,34 US$
      234,00 US$
      250
      1,89 US$
      472,50 US$
      500
      1,75 US$
      875,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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