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MSC040SMA120B

MSC040SMA120B
Mfr. #:
MSC040SMA120B
Fabricante:
Microchip / Microsemi
Descripción:
MOSFET UNRLS, FG, SIC MOSFET, TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MSC040SMA120B Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MSC040SMA120B más información
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1.2 kV
Rds On - Resistencia de la fuente de drenaje:
50 mOhms
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Marca:
Microchip / Microsemi
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1
Subcategoría:
MOSFET
Tags
MSC040S, MSC040, MSC04, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH SiC 1.2KV 64A Tube
***hardson RFPD
SILICON CARBIDE MOSFETS
***i-Key
MOSFET N-CH 1200V TO247
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
Parte # Mfg. Descripción Valores Precio
MSC040SMA120B
DISTI # V36:1790_21374926		Microsemi CorporationSILICON CARBIDE POWER TRANSISTORS/MODULES0
    MSC040SMA120B
    DISTI # MSC040SMA120B-ND    		Microsemi CorporationMOSFET N-CH 1200V TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 120:$24.5769
    • 30:$26.4437
    • 10:$28.7770
    • 1:$31.1100
    MSC040SMA120B
    DISTI # MSC040SMA120B    		Microchip Technology IncSilicon Carbide Power MOSFET N-Channel 1200V 67A 3-Pin TO-247 - Rail/Tube (Alt: MSC040SMA120B)
    RoHS: Compliant
    Min Qty: 90
    Container: Tube    		Americas - 0
    • 900:$19.2900
    • 450:$19.5900
    • 270:$20.1900
    • 180:$20.8900
    • 90:$21.5900
    MSC040SMA120B
    DISTI # 494-MSC040SMA120B    		Microchip Technology IncMOSFET
    RoHS: Compliant    		0
    • 1:$36.3400
    • 5:$35.3900
    • 10:$33.9800
    • 25:$32.7900
    • 50:$31.1100
    • 100:$29.2000
    • 250:$27.2800
    Imagen Parte # Descripción
    SCT10N120

    Mfr.#: SCT10N120

    OMO.#: OMO-SCT10N120

    		 MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
    C3M0120100K

    Mfr.#: C3M0120100K

    OMO.#: OMO-C3M0120100K

    		 MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4
    LSIC1MO120E0160

    Mfr.#: LSIC1MO120E0160

    OMO.#: OMO-LSIC1MO120E0160

    		 MOSFET 1200 V 160 mOhm SiC Mosfet
    LSIC1MO120E0120

    Mfr.#: LSIC1MO120E0120

    OMO.#: OMO-LSIC1MO120E0120

    		 MOSFET 1200 V 120 mOhm SiC Mosfet
    C2M0080120D

    Mfr.#: C2M0080120D

    OMO.#: OMO-C2M0080120D

    		 MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
    UJ3C120080K3S

    Mfr.#: UJ3C120080K3S

    OMO.#: OMO-UJ3C120080K3S

    		 MOSFET 1200V/80mOhm SiC CASCODE G3
    LSIC1MO120E0080

    Mfr.#: LSIC1MO120E0080

    OMO.#: OMO-LSIC1MO120E0080

    		 MOSFET 1200V 80mOhm SiC MOSFET
    LSIC1MO120E0120

    Mfr.#: LSIC1MO120E0120

    OMO.#: OMO-LSIC1MO120E0120-LITTELFUSE

    		 1200V/120mohm SiC MOSFET TO-247-3L
    LSIC1MO120E0160

    Mfr.#: LSIC1MO120E0160

    OMO.#: OMO-LSIC1MO120E0160-LITTELFUSE

    		 1200V/160mohm SiC MOSFET TO-247-3L
    C2M0080120D

    Mfr.#: C2M0080120D

    OMO.#: OMO-C2M0080120D-WOLFSPEED

    		 MOSFET N-CH 1200V 31.6A TO247
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de MSC040SMA120B es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    36,34 US$
    36,34 US$
    5
    35,39 US$
    176,95 US$
    10
    33,98 US$
    339,80 US$
    25
    32,79 US$
    819,75 US$
    50
    31,11 US$
    1 555,50 US$
    100
    29,20 US$
    2 920,00 US$
    250
    27,28 US$
    6 820,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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