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SIHF22N60E-E3

SIHF22N60E-E3
Mfr. #:
SIHF22N60E-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHF22N60E-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHF22N60E-E3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
21 A
Rds On - Resistencia de la fuente de drenaje:
180 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
57 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
35 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
35 ns
Tipo de producto:
MOSFET
Hora de levantarse:
27 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
66 ns
Tiempo típico de retardo de encendido:
18 ns
Unidad de peso:
0.211644 oz
Tags
SIHF22N60E, SIHF22N60, SIHF22, SIHF2, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
E-Series N-Channel 600 V 0.18 O 86 nC Flange Mount Power Mosfet - TO-220FP
***nell
MOSFET, N CH, 600V, 21A, TO-220 FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:227W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHF22N60E-E3
DISTI # SIHF22N60E-E3-ND		Vishay SiliconixMOSFET N-CH 600V 21A TO220
Min Qty: 1
Container: Tube		994In Stock
  • 2500:$1.6944
  • 1000:$1.7836
  • 500:$2.1148
  • 100:$2.4843
  • 10:$3.0320
  • 1:$3.3800
SIHF22N60E-E3
DISTI # SIHF22N60E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak - Rail/Tube (Alt: SIHF22N60E-E3)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
SIHF22N60E-GE3
DISTI # 78-SIHF22N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant		862
  • 1:$4.0600
  • 10:$3.3600
  • 100:$2.7600
  • 250:$2.6800
  • 500:$2.4000
  • 1000:$2.3200
  • 2500:$1.9200
SIHF22N60E-E3
DISTI # 781-SIHF22N60E-E3		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
RoHS: Compliant		0
    SIHF22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant    		Americas -
      SIHF22N60E-E3
      DISTI # 7689329      		Vishay IntertechnologiesSIHF22N60E-E3 N-Channel MOSFET, 21 A, 600 V E Series, 3-Pin TO-220FP Vishay, EA
      Min Qty: 1
      Container: Bulk      		16
      • 1:$3.3790
      • 10:$3.2110
      • 20:$3.0750
      SIHF22N60E-E3
      DISTI # 1696158      		Vishay IntertechnologiesIn a Tube of 50, SIHF22N60E-E3 N-Channel MOSFET, 21 A, 600 V E Series, 3-Pin TO-220FP Vishay, TU
      Min Qty: 50
      Container: Tube      		0
      • 50:$2.9740
      SIHF22N60E-E3
      DISTI # 2079769      		Vishay IntertechnologiesMOSFET, N CH, 600V, 21A, TO-220 FULLPAK
      RoHS: Compliant      		0
      • 3000:£1.5400
      • 2000:£1.6000
      • 500:£1.6900
      • 250:£1.8100
      • 100:£1.9600
      • 25:£2.1900
      • 1:£2.6400
      Imagen Parte # Descripción
      SIHF22N60E-GE3

      Mfr.#: SIHF22N60E-GE3

      OMO.#: OMO-SIHF22N60E-GE3

      		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
      SIHF22N65E-GE3

      Mfr.#: SIHF22N65E-GE3

      OMO.#: OMO-SIHF22N65E-GE3

      		 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
      SIHF22N60E-E3

      Mfr.#: SIHF22N60E-E3

      OMO.#: OMO-SIHF22N60E-E3

      		 MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
      SIHF22N60E-E3

      Mfr.#: SIHF22N60E-E3

      OMO.#: OMO-SIHF22N60E-E3-VISHAY

      		 IGBT Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
      SIHF22N60S-E3

      Mfr.#: SIHF22N60S-E3

      OMO.#: OMO-SIHF22N60S-E3-126

      		 IGBT Transistors MOSFET 600V N-Channel Super junction TO-220FP
      SIHF22N65E-GE3

      Mfr.#: SIHF22N65E-GE3

      OMO.#: OMO-SIHF22N65E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
      SIHF22N60E-GE3

      Mfr.#: SIHF22N60E-GE3

      OMO.#: OMO-SIHF22N60E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS
      SIHF22N60E

      Mfr.#: SIHF22N60E

      OMO.#: OMO-SIHF22N60E-1190

      		 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      SIHF22N65E

      Mfr.#: SIHF22N65E

      OMO.#: OMO-SIHF22N65E-1190

      		 Nuevo y original
      SIHF22N6OE-E3

      Mfr.#: SIHF22N6OE-E3

      OMO.#: OMO-SIHF22N6OE-E3-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de SIHF22N60E-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1000
      1,78 US$
      1 780,00 US$
      3000
      1,69 US$
      5 070,00 US$
      5000
      1,63 US$
      8 150,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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