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SIHF22N60E-GE3

SIHF22N60E-GE3
Mfr. #:
SIHF22N60E-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHF22N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SIHF22N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Serie
E
embalaje
Tubo
Unidad de peso
0.211644 oz
Estilo de montaje
A través del orificio
Nombre comercial
Serie E
Paquete-Estuche
TO-220-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
35 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
35 ns
Hora de levantarse
27 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
21 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Resistencia a la fuente de desagüe de Rds
180 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
66 ns
Tiempo de retardo de encendido típico
18 ns
Qg-Gate-Charge
86 nC
Transconductancia directa-Mín.
6.4 S
Modo de canal
Mejora
Tags
SIHF22N60E, SIHF22N60, SIHF22, SIHF2, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHF22N60E-GE3
DISTI # SIHF22N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 21A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		2000In Stock
  • 1000:$2.2330
  • 500:$2.6477
  • 100:$3.2698
  • 50:$3.5888
  • 1:$4.4700
SIHF22N60E-GE3
DISTI # SIHF22N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF22N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.0900
  • 2000:$1.9900
  • 4000:$1.8900
  • 6000:$1.8900
  • 10000:$1.7900
SIHF22N60E-GE3
DISTI # 19X1936		Vishay IntertechnologiesMOSFET Transistor, N Channel, 21 A, 600 V, 0.15 ohm, 10 V, 2 V RoHS Compliant: Yes5260
  • 1:$4.0700
  • 10:$3.3700
  • 25:$3.1700
  • 50:$2.9700
  • 100:$2.7700
SIHF22N60E-GE3
DISTI # 78-SIHF22N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant		112
  • 1:$4.0700
  • 10:$3.3700
  • 100:$2.7700
SIHF22N60E-E3
DISTI # 781-SIHF22N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant		4
  • 1:$3.5700
  • 10:$2.9600
  • 100:$2.4400
  • 250:$2.3600
  • 500:$2.1200
  • 1000:$1.7900
  • 2500:$1.7000
SIHF22N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		Europe - 500
    SIHF22N60E-GE3
    DISTI # 2364078    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-220FP
    RoHS: Compliant    		5260
    • 1:$6.4400
    • 10:$5.3400
    • 100:$4.3800
    SIHF22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant    		Americas -
      SIHF22N60E-GE3
      DISTI # 2364078      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, TO-220FP
      RoHS: Compliant      		5260
      • 1:£3.5200
      • 10:£2.6000
      • 100:£2.1300
      • 250:£2.0900
      • 500:£2.0400
      Imagen Parte # Descripción
      SIHF22N60E-GE3

      Mfr.#: SIHF22N60E-GE3

      OMO.#: OMO-SIHF22N60E-GE3

      		 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
      SIHF22N65E-GE3

      Mfr.#: SIHF22N65E-GE3

      OMO.#: OMO-SIHF22N65E-GE3

      		 MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
      SIHF22N60E-E3

      Mfr.#: SIHF22N60E-E3

      OMO.#: OMO-SIHF22N60E-E3

      		 MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
      SIHF22N60E-E3

      Mfr.#: SIHF22N60E-E3

      OMO.#: OMO-SIHF22N60E-E3-VISHAY

      		 IGBT Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
      SIHF22N60S-E3

      Mfr.#: SIHF22N60S-E3

      OMO.#: OMO-SIHF22N60S-E3-126

      		 IGBT Transistors MOSFET 600V N-Channel Super junction TO-220FP
      SIHF22N65E-GE3

      Mfr.#: SIHF22N65E-GE3

      OMO.#: OMO-SIHF22N65E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
      SIHF22N60E-GE3

      Mfr.#: SIHF22N60E-GE3

      OMO.#: OMO-SIHF22N60E-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS
      SIHF22N60E

      Mfr.#: SIHF22N60E

      OMO.#: OMO-SIHF22N60E-1190

      		 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      SIHF22N65E

      Mfr.#: SIHF22N65E

      OMO.#: OMO-SIHF22N65E-1190

      		 Nuevo y original
      SIHF22N6OE-E3

      Mfr.#: SIHF22N6OE-E3

      OMO.#: OMO-SIHF22N6OE-E3-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de SIHF22N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,54 US$
      2,54 US$
      10
      2,41 US$
      24,13 US$
      100
      2,29 US$
      228,58 US$
      500
      2,16 US$
      1 079,40 US$
      1000
      2,03 US$
      2 031,80 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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