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IPA65R660CFD

IPA65R660CFD
Mfr. #:
IPA65R660CFD
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 700V 6A TO220FP CoolMOS CFD2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPA65R660CFD Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPA65R660CFD más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
6 A
Rds On - Resistencia de la fuente de drenaje:
660 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
22 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
27.8 W
Configuración:
Único
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
16.15 mm
Longitud:
10.65 mm
Serie:
CoolMOS CFD2
Tipo de transistor:
1 N-Channel
Ancho:
4.85 mm
Marca:
Infineon Technologies
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 nS
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 nS
Parte # Alias:
IPA65R660CFDXKSA1 IPA65R66CFDXK SP000838284
Unidad de peso:
0.211644 oz
Tags
IPA65R66, IPA65R6, IPA65R, IPA65, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPA65R660CFD
DISTI # 30579289		Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-220 Full-Pak
RoHS: Compliant		190
  • 100:$0.5827
IPA65R660CFDXKSA1
DISTI # IPA65R660CFDXKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 6A TO220
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$1.0262
IPA65R660CFD
DISTI # C1S322000455120		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		190
  • 100:$0.4570
IPA65R660CFD
DISTI # IPA65R660CFDXKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPA65R660CFDXKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7679
  • 2000:$0.7399
  • 3000:$0.7129
  • 5000:$0.6889
  • 10000:$0.6769
IPA65R660CFDXKSA2
DISTI # IPA65R660CFDXKSA2		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPA65R660CFDXKSA2)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
    IPA65R660CFD
    DISTI # 726-IPA65R660CFD    		Infineon Technologies AGMOSFET N-Ch 700V 6A TO220FP CoolMOS CFD2
    RoHS: Compliant    		425
    • 1:$1.5700
    • 10:$1.3400
    • 100:$1.0700
    • 500:$0.9330
    IPA65R660CFDXKSA2
    DISTI # 726-IPA65R660CFDXKSA    		Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
    RoHS: Compliant    		0
    • 1:$1.5700
    • 10:$1.3400
    • 100:$1.0700
    • 500:$0.9330
    Imagen Parte # Descripción
    IPA65R125C7XKSA1

    Mfr.#: IPA65R125C7XKSA1

    OMO.#: OMO-IPA65R125C7XKSA1

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    IPA65R065C7XKSA1

    Mfr.#: IPA65R065C7XKSA1

    OMO.#: OMO-IPA65R065C7XKSA1

    		 MOSFET HIGH POWER BEST IN CLASS
    IPA65R045C7XKSA1

    Mfr.#: IPA65R045C7XKSA1

    OMO.#: OMO-IPA65R045C7XKSA1

    		 MOSFET HIGH POWER BEST IN CLASS
    IPA65R150CFDXKSA2

    Mfr.#: IPA65R150CFDXKSA2

    OMO.#: OMO-IPA65R150CFDXKSA2

    		 MOSFET
    IPA65R190CFDA

    Mfr.#: IPA65R190CFDA

    OMO.#: OMO-IPA65R190CFDA-1190

    		 Nuevo y original
    IPA65R600E6,65E6600

    Mfr.#: IPA65R600E6,65E6600

    OMO.#: OMO-IPA65R600E6-65E6600-1190

    		 Nuevo y original
    IPA65R660CFD

    Mfr.#: IPA65R660CFD

    OMO.#: OMO-IPA65R660CFD-1190

    		 Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-220 Full-Pak
    IPA65R380E6

    Mfr.#: IPA65R380E6

    OMO.#: OMO-IPA65R380E6-124

    		 Darlington Transistors MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS E6
    IPA65R110CFD

    Mfr.#: IPA65R110CFD

    OMO.#: OMO-IPA65R110CFD-317

    		 RF Bipolar Transistors MOSFET N-Ch 700V 31.2A TO220FP CoolMOS CFD2
    IPA65R190E6

    Mfr.#: IPA65R190E6

    OMO.#: OMO-IPA65R190E6-317

    		 RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS E6
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de IPA65R660CFD es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,56 US$
    1,56 US$
    10
    1,33 US$
    13,30 US$
    100
    1,06 US$
    106,00 US$
    500
    0,93 US$
    466,50 US$
    1000
    0,77 US$
    773,00 US$
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