IPD60R600CP

IPD60R600CP
Mfr. #:
IPD60R600CP
Fabricante:
Rochester Electronics, LLC
Descripción:
IGBT Transistors MOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R600CP Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
infineon
categoria de producto
FET - Single
Serie
CoolMOS CP
embalaje
Carrete
Alias ​​de parte
IPD60R600CPBTMA1 SP000405878
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
CoolMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
60 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
17 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
6.1 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Resistencia a la fuente de desagüe de Rds
600 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
75 ns
Tiempo de retardo de encendido típico
17 ns
Modo de canal
Mejora
Tags
IPD60R600CP, IPD60R600C, IPD60R60, IPD60R6, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) DPAK T/R
*** Source Electronics
CoolMOS Power Transistor
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***nell
MOSFET, N, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.1A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.1A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Parte # Mfg. Descripción Valores Precio
IPD60R600CPBTMA1
DISTI # IPD60R600CPBTMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    IPD60R600CPBTMA1
    DISTI # IPD60R600CPBTMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPD60R600CPBTMA1
      DISTI # IPD60R600CPBTMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPD60R600CPATMA1
        DISTI # IPD60R600CPATMA1-ND
        Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
        RoHS: Compliant
        Container: Tape & Reel (TR)
        Limited Supply - Call
          IPD60R600CPATMA1
          DISTI # IPD60R600CPATMA1
          Infineon Technologies AGTrans MOSFET N-CH 600V 6.1A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600CPATMA1)
          RoHS: Compliant
          Container: Reel
          Americas - 0
            IPD60R600CP
            DISTI # 33P7145
            Infineon Technologies AGMOSFET, N CHANNEL, 650V, 6.1A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
              IPD60R600CP
              DISTI # 726-IPD60R600CP
              Infineon Technologies AGMOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP
              RoHS: Compliant
              0
                IPD60R600CPInfineon Technologies AGPower Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
                RoHS: Compliant
                14945
                • 1000:$0.6800
                • 500:$0.7100
                • 100:$0.7400
                • 25:$0.7700
                • 1:$0.8300
                IPD60R600CP
                DISTI # 1664029
                Infineon Technologies AGMOSFET, N, TO-252
                RoHS: Compliant
                70
                • 5:£0.5950
                • 25:£0.5450
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                Mfr.#: IPD60R600P7SAUMA1

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                MOSFET N-CH 600V 6A TO252-3
                IPD60R280P7SAUMA1-CUT TAPE

                Mfr.#: IPD60R280P7SAUMA1-CUT TAPE

                OMO.#: OMO-IPD60R280P7SAUMA1-CUT-TAPE-1190

                Nuevo y original
                IPD60R360P7SAUMA1-CUT TAPE

                Mfr.#: IPD60R360P7SAUMA1-CUT TAPE

                OMO.#: OMO-IPD60R360P7SAUMA1-CUT-TAPE-1190

                Nuevo y original
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                OMO.#: OMO-IPD60R380P6BTMA1-INFINEON-TECHNOLOGIES

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                Mfr.#: IPD60R450E6ATMA1

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                MOSFET N-CH TO252-3
                Disponibilidad
                Valores:
                Available
                En orden:
                1500
                Ingrese la cantidad:
                El precio actual de IPD60R600CP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
                Precio de referencia (USD)
                Cantidad
                Precio unitario
                Ext. Precio
                1
                1,02 US$
                1,02 US$
                10
                0,97 US$
                9,69 US$
                100
                0,92 US$
                91,80 US$
                500
                0,87 US$
                433,50 US$
                1000
                0,82 US$
                816,00 US$
                Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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