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IPD60N10S4L12ATMA1

IPD60N10S4L12ATMA1
Mfr. #:
IPD60N10S4L12ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH TO252-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60N10S4L12ATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPD60N10S4L12ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IPD60N10
embalaje
Carrete
Alias ​​de parte
IPD60N10S4L-12 IPD60N10S4L12XT SP000866550
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
94 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
21 ns
Hora de levantarse
3 ns
Vgs-Puerta-Fuente-Voltaje
+/- 16 V
Id-corriente-de-drenaje-continua
60 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Resistencia a la fuente de desagüe de Rds
9.8 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
20 ns
Tiempo de retardo de encendido típico
4 ns
Qg-Gate-Charge
38 nC
Transconductancia directa-Mín.
-
Modo de canal
Mejora
Tags
IPD60N10S4L, IPD60N1, IPD60N, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313
***ark
Mosfet, Aec-Q101, N-Ch, 100V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0098Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Parte # Mfg. Descripción Valores Precio
IPD60N10S4L12ATMA1
DISTI # IPD60N10S4L12ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		78In Stock
  • 1000:$0.5940
  • 500:$0.7524
  • 100:$0.9702
  • 10:$1.2280
  • 1:$1.3900
IPD60N10S4L12ATMA1
DISTI # IPD60N10S4L12ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		78In Stock
  • 1000:$0.5940
  • 500:$0.7524
  • 100:$0.9702
  • 10:$1.2280
  • 1:$1.3900
IPD60N10S4L12ATMA1
DISTI # IPD60N10S4L12ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.5382
IPD60N10S4L12ATMA1
DISTI # IPD60N10S4L12ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 60A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60N10S4L12ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5029
  • 5000:$0.4849
  • 10000:$0.4669
  • 15000:$0.4519
  • 25000:$0.4439
IPD60N10S4L12ATMA1
DISTI # IPD60N10S4L-12		Infineon Technologies AGTrans MOSFET N-CH 100V 60A 3-Pin TO-252 T/R (Alt: IPD60N10S4L-12)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    IPD60N10S4L12ATMA1
    DISTI # 13AC9043    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes4053
    • 1000:$0.5250
    • 500:$0.6650
    • 250:$0.7090
    • 100:$0.7520
    • 50:$0.8280
    • 25:$0.9030
    • 10:$0.9790
    • 1:$1.1400
    IPD60N10S4L-12
    DISTI # 726-IPD60N10S4L-12    		Infineon Technologies AGMOSFET N-Ch 100V 60A DPAK-2
    RoHS: Compliant    		8952
    • 1:$1.1400
    • 10:$0.9790
    • 100:$0.7520
    • 500:$0.6650
    • 1000:$0.5250
    • 2500:$0.4650
    • 10000:$0.4480
    IPD60N10S4L12ATMA1
    DISTI # 726-IPD60N10S4L12ATM    		Infineon Technologies AGMOSFET N-Ch 100V 60A DPAK-2
    RoHS: Compliant    		2123
    • 1:$1.1400
    • 10:$0.9790
    • 100:$0.7520
    • 500:$0.6650
    • 1000:$0.5250
    • 2500:$0.4650
    • 10000:$0.4480
    IPD60N10S4L12ATMA1
    DISTI # 2725850    		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-252
    RoHS: Compliant    		6078
    • 500:£0.5180
    • 250:£0.5520
    • 100:£0.5850
    • 25:£0.7620
    • 5:£0.8480
    Imagen Parte # Descripción
    IPD60N10S4L-12

    Mfr.#: IPD60N10S4L-12

    OMO.#: OMO-IPD60N10S4L-12

    		 MOSFET N-Ch 100V 60A DPAK-2
    IPD60N10S4L12ATMA1

    Mfr.#: IPD60N10S4L12ATMA1

    OMO.#: OMO-IPD60N10S4L12ATMA1

    		 MOSFET N-Ch 100V 60A DPAK-2
    IPD60N10S412ATMA1

    Mfr.#: IPD60N10S412ATMA1

    OMO.#: OMO-IPD60N10S412ATMA1

    		 MOSFET N-CHANNEL 100+
    IPD60N10S4L12ATMA1-CUT TAPE

    Mfr.#: IPD60N10S4L12ATMA1-CUT TAPE

    OMO.#: OMO-IPD60N10S4L12ATMA1-CUT-TAPE-1190

    		 Nuevo y original
    IPD60N10S4L-12

    Mfr.#: IPD60N10S4L-12

    OMO.#: OMO-IPD60N10S4L-12-1190

    		 Trans MOSFET N-CH 100V 60A
    IPD60N10S412ATMA1

    Mfr.#: IPD60N10S412ATMA1

    OMO.#: OMO-IPD60N10S412ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CHANNEL 100+
    IPD60N10S4L12ATMA1

    Mfr.#: IPD60N10S4L12ATMA1

    OMO.#: OMO-IPD60N10S4L12ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH TO252-3
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de IPD60N10S4L12ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,61 US$
    0,61 US$
    10
    0,58 US$
    5,82 US$
    100
    0,55 US$
    55,12 US$
    500
    0,52 US$
    260,30 US$
    1000
    0,49 US$
    490,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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