We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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Parte # | Mfg. | Descripción | Valores | Precio |
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TC58NYG0S3HBAI6 DISTI # TC58NYG0S3HBAI6-ND | Toshiba Semiconductor and Storage Products | IC FLASH 1G PARALLEL 67VFBGA RoHS: Compliant Min Qty: 338 Container: Tray | Temporarily Out of Stock |
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TC58NYG0S3HBAI6 DISTI # TC58NYG0S3HBAI6 | Toshiba America Electronic Components | 1Gbit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TC58NYG0S3HBAI6) RoHS: Compliant Min Qty: 338 Container: Tray | Americas - 0 |
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TC58NYG0S3HBAI6 DISTI # 757-TC58NYG0S3HBAI6 | Toshiba America Electronic Components | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) RoHS: Compliant | 338 |
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Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: TC58NYG0S3HBAI6 OMO.#: OMO-TC58NYG0S3HBAI6 |
NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | |
Mfr.#: TC58NYG1S3HBAI4_TRAY |
Nuevo y original | |
Mfr.#: TC58NYG1S8HBAI6JD2 OMO.#: OMO-TC58NYG1S8HBAI6JD2-1190 |
Nuevo y original | |
Mfr.#: TC58NYG2S0FBAI4 OMO.#: OMO-TC58NYG2S0FBAI4-1190 |
Nuevo y original | |
Mfr.#: TC58NYG2S3ETAI0B3H OMO.#: OMO-TC58NYG2S3ETAI0B3H-1190 |
Nuevo y original | |
Mfr.#: TC58NYG3S0FBAID OMO.#: OMO-TC58NYG3S0FBAID-1190 |
Nuevo y original | |
Mfr.#: TC58NYG1S3HBAI6 |
EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM | |
Mfr.#: TC58NYG0S3HBAI6 |
EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM | |
Mfr.#: TC58NYG2S0HBAI4 |
Flash Memory 4Gb 1.8V SLC NAND Flash Serial EEPROM | |
Mfr.#: TC58NYG1S3HBAI6-ND OMO.#: OMO-TC58NYG1S3HBAI6-ND-1190 |
Nuevo y original |