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IRFAF40

IRFAF40
Mfr. #:
IRFAF40
Fabricante:
Rochester Electronics, LLC
Descripción:
Trans MOSFET N-CH 900V 4.3A 3-Pin(2+Tab) TO-204AA - Bulk (Alt: IRFAF40)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFAF40 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IRFAF, IRFA, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
N-CHANNEL HERMETIC MOS HEXFET
***et
HEXFET, HI-REL
***th Star Micro
Transistor MOSFET N-CH 400V 5.5A 3-Pin (3+Tab) TO-220AB
***ure Electronics
Single N-Channel 400 V 1 Ohms Flange Mount Power Mosfet - TO-220-3
*** electronic
Transistor MOSFET N-Ch. 5,5A/400V TO220
***klin Elektronik
SILICONIX THT MOSFET NFET 400V 5,5A 1Ω 150°C TO-220 IRF730PBF
***ment14 APAC
N CHANNEL MOSFET, 400V, 5.5A TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A;
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N CHANNEL MOSFET, 400V, 5.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
***nell
MOSFET, N, 400V, 5.5A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:5.5A; Resistance, Rds On:1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:22A; Power Dissipation:74W; Power, Pd:74W; Thermal Resistance, Junction to Case A:1.7°C/W; Voltage, Vds Max:400V
***ure Electronics
Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 200V 5.2A 3-Pin (3+Tab) TO-220AB
***enic
200V 5.2A 50W 800m´Î@10V3.1A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ark
N CHANNEL MOSFET, 200V, 5.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: No
***nell
MOSFET, N, 200V, 5.2A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:5.2A; Resistance, Rds On:0.8ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:18A; Power Dissipation:50W; Power, Pd:50W; Thermal Resistance, Junction to Case A:2.5°C/W; Voltage, Vds Max:200V
***itex
Transistor: N-MOSFET; unipolar; 500V; 4.5A; 1.5ohm; 100W; -65+150 deg.C; THT; TO220
***ure Electronics
Single N-Channel 500 V 1.5 Ohms Flange Mount Power Mosfet - TO-220-3
*** electronic
Transistor MOSFET N-Ch. 4,5A/500V TO220
***ical
Trans MOSFET N-CH 500V 4.5A 3-Pin (3+Tab) TO-220AB
***enic
500V 4.5A 1.5¦¸@10V,2.7A 74W 4V@250¦ÌA N Channel TO-220(TO-220-3) MOSFETs ROHS
***nsix Microsemi
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 500V, 4.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:74W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:4.5A; Junction to Case Thermal Resistance A:1.7°C/W; Package / Case:TO-220AB; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:18A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 200 V 600 mOhm 23 nC 4HEXFET® Power Mosfet - TO-251
*** Source Electronics
Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A) | MOSFET N-CH 200V 5A I-PAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 200V, 5A, 600 mOhm, 15 nC Qg, I-Pak
*** Stop Electro
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 200V, 5A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:43W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:3.5°C/W; On State resistance @ Vgs = 10V:600ohm; Package / Case:IPAK; Power Dissipation Pd:43W; Power Dissipation Pd:43W; Pulse Current Idm:20A; Termination Type:Through Hole; Turn Off Time:12ns; Turn On Time:11ns; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ical
Trans MOSFET N-CH 500V 11.1A Automotive 3-Pin(3+Tab) TO-220FP Tube
*** Electronic Components
Darlington Transistors MOSFET N-Ch 500V 5.4A TO220FP-3 CoolMOS CE
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.1pF 50volts C0G +/-0.5pF
***nell
MOSFET, N-CH, 500V, 11.1A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V;
***ineon SCT
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11.1 / Drain-Source Voltage (Vds) V = 550 / ON Resistance (Rds(on)) mOhm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 28
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
***p One Stop
Trans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-220 Tube
*** Stop Electro
Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:5.1A; Package / Case:TO-220; Power Dissipation Pd:83W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
Parte # Mfg. Descripción Valores Precio
IRFAF40
DISTI # IRFAF40		Infineon Technologies AGTrans MOSFET N-CH 900V 4.3A 3-Pin(2+Tab) TO-204AA - Bulk (Alt: IRFAF40)
RoHS: Not Compliant
Min Qty: 26
Container: Bulk		Americas - 0
    IRFAF40International Rectifier 
    RoHS: Not Compliant    		934
    • 1000:$5.5500
    • 500:$5.8500
    • 100:$6.0900
    • 25:$6.3500
    • 1:$6.8300
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    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de IRFAF40 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    8,32 US$
    8,32 US$
    10
    7,91 US$
    79,09 US$
    100
    7,49 US$
    749,25 US$
    500
    7,08 US$
    3 538,15 US$
    1000
    6,66 US$
    6 660,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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